本研究以兩步驟成長氧化鋅奈米片狀結構。首先，以化學浴沉積法於已披覆氧化鋅晶種層之透明導電基板上，成長適量的針狀氧化鋅奈米線。第二步驟則利用室溫化學浴沉積法，可沿著針狀奈米線及其周圍成長出兼備高密度與高方向性的氧化鋅奈米片狀結構。如再次利用室溫化學浴沉積法，可使氧化鋅奈米片狀結構延伸其橫向側枝，形成三維氧化鋅奈米結構。根據高解析穿透式電子顯微鏡分析，顯示氧化鋅奈米片狀型態為單晶結構，成長方式是沿著ZnO[0001]方向垂直於基板變長，同時亦朝著[11-20]或[2-1-10]方向平行於基板變寬，而展現出奈米片狀結構。本研究利用濺鍍法沉積不同數量的金奈米粒子於奈米片狀結構上形成複合材料，並將其應用於光觸媒降解甲基橙，反應四小時可使濃度降至原先的25.1 %，與氧化鋅奈米片狀相比，提升0.34倍。另外，本研究將聚(3-己基噻吩) [poly(3-hexylthiophene-2,5-diyl), P3HT]滲入氧化鋅奈米片狀結構間，以組裝有機/無機混摻型太陽能電池，最高效率可達0.88 %。本研究亦利用時間解析光激螢光光譜(time-resolved photoluminescence，TRPL)及電化學交流阻抗分析(electrochemical impedance spectroscopic，EIS)分析電池中激子(exciton)解離與電子傳輸之特性。進一步利用D149染料做為氧化鋅奈米片狀結構與P3HT之介面修飾劑，雖然短路電流降低，但可大幅提升開路電壓與填充因子。

Successful growth of ZnO nanosheets (NS) and derived 3-dimensional nanostructure (NS-spine) by simple wet chemical route have been demonstrated in this study. The needle-liked ZnO nanowire (NW) array was first synthesized on transparent conductive oxide substrate by aqueous chemical bath deposition (CBD). The ZnO NS and ZnO NS-spine were formed using another aqueous CBD at room temperature. High resolution transmission electron microscope results indicate that ZnO NS possesses single crystal structure with growth direction of [0001] and [11-20]/[2-1-10] vertical to and parallel to substrate, respectively. Photodegradation of methyl orange has been performed to investigate the photocatalytic properties of the Au NPs/ZnO NS and pure ZnO NS arrays. A 34 % enhancement of photocatalytic activity of the ZnO NS array is observed when forming the Au NPs/ZnO NS composite array. Additionally, poly(3-hexylthiophene-2,5-diyl) (P3HT)/ZnO NS array hybrid solar cells were fabricated and an efficiency of 0.88 % were obtained in this study. Time-resolved photoluminescence (TRPL) and electrochemical impedance spectroscopic (EIS) were employed to analyze the charge transfer and recombination at interfaces of P3HT and ZnO NSs in the cells, respectively. Furthermore, Voc and FF of the ZnO NS/P3HT hybrid solar cell can be improved by D149 modification. However, the Jsc is lowered due to poor charge separation and enhanced recombination at interface of P3HT and ZnO NSs.

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