本研究使用真空爐管，以化學氣相沉積法在低壓下合成硫化錳奈米線，
使用FE-SEM 分析觀察其形貌，比較包含溫度、壓力、氣體流量及前驅
物克數等變因，得出在基板溫度850℃、持溫2 小時及載流氣體Ar 60sccm條件下有最佳的奈米線形貌，高寬比約2000，以XRD、HR-TEM、EDS及繞射圖譜等分析其晶相，得知α-MnS、β-MnS 及MnS2 同時存在。本實驗使用CH4 作為碳元素來源進行碳摻雜實驗，並經由STEM line scan 證實。性質量測著重電性、磁性、光學性質及超電容元件，在常溫下，四點探針模式量測MnS 奈米線電阻率為9.72x10-6 Ω-m，C-doped MnS 奈米線電阻率為5.21x10-6 Ω-m，兩點探針模式下電阻率則可達4.2x10-7 Ω-m，Cdoped MnS 奈米線在電性上得到顯著的提升，磁性質則表現出室溫超順磁性，低溫轉變為反鐵磁性的現象，尼爾溫度(TN)為24K，有效磁矩(μeff)則為4.52μB，兩者數值相比塊材均有顯著下降，透過光致發光光譜儀得到在1.6eV 處有寬廣且強的峰值。超電容元件使用PVA/KOH gel 作為電解質合成全固態對稱式元件，C-V 曲線呈現明顯的電容行為，比電容(Cs)值最高可達593.07 F g-1，特色明顯的性能顯見MnS 多元且具發展潛力的應用。

We report a simple and economical approach for fabrication of single-crystalline MnS nanowires and carbon-doped MnS nanowires uniformly sheathed with amorphous silicon oxide via low-pressure chemical vapor deposition technique (LP-CVD) used methane gas as a precursor in a single-step route. The growth mechanism followed Au-Ni catalytic vapor-liquid-solid (VLS) process with Si (100) as substrate. We modified the processing parameters to obtain single crystalline nanowires with an improved aspect ratio. The nanowires possess good morphology and core-shell structure with high aspect ratio around 2000. As-synthesized MnS NWs were characterized by advanced spectroscopy and electron microscopy techniques, including XRD, SEM, HR-TEM, EDS, and SAED. To analyze electrical and electrochemical properties, we utilized a four-point probe system to measure resistivities for a single nanowire and obtained the resistivities of MnS NW and C-doped MnS NW are 9.72x10-6 Ω-m and 5.2x10-6 Ω-m, respectively. The magnetic properties analysis shows that MnS NW proceeds a transformation from paramagnetic to antiferromagnetic at low temperature. The Néel temperature we got is 24K and effective magnetic moment is 4.52μB, which are both lower than bulk MnS. As a supercapacitor material, we assembled asymmetrical all-solid-state supercapacitor, which exhibits capacitor behavior with the specific capacitance of 593.07 F g-1. These remarkable results make these materials promising for practical applications in nanodevices and energy-related fields.

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