本學位論文主要闡述高濃度電子層於表面電漿領域之研究，在實驗中包含以有限元素分析法(Finite element method)為模擬方法，以及製程與量測，並以數值模擬方法對實驗作預期與規劃。
　　首先我們利用絕緣層-透明導電薄膜接面形成之高濃度電荷累積層作為激發表面電漿子模擬，在模擬中以帕松方程式(Poisson’s equation)為模型推導出發點，推導出在電荷累積層中電子濃度分佈與電位分佈，並以隨位置變化之電子濃度分佈改寫德魯模型(Drude model)。模擬激發方法利用側向入射耦合法(End-fire coupling)激發表面電漿子，另外以不同表面電位探討電漿子波數的變化以及侷限效果，此模擬成功演示了具可調變性的表面電漿子元件。
　　實驗另一部份為高電子遷移率電晶體作為感測器應用，藉以元件表面態改變進而影響高濃度電子層通道與其高反應速率的優點，作為侷域性表面電漿中熱載子(Hot electron)的感測。我們以奈米球鏡微影術於元件感測區中製作橢圓長軸光譜響應峰值位於980 nm之奈米結構，以具單一偏振之980 nm雷射照射樣品，由鎖向放大器量測電流變化，得到電流差值是和侷域性表面電漿共振有關，且透過其他對照實驗量測，建立了以電元件感測熱載子的模型。

We have discussed the application of high electron density layer in plasmonics in this thesis, including the nanofabrication, and using the finite element analysis method to expect the result of experiment.
In first part of the thesis, we use the accumulation layer which is created at the interface between insulator and transparent conductive oxide to excite surface plasmon polaritons, following the standard analysis of a MOS structure, we derive the electron density and surface potential in accumulation layer within the ITO material, and describe the optical characteristics of ITO with and within accumulation layer by Drude model, we successfully excite surface plasmon polaritons by end-fired coupling, and make the surface plasmon polaritons be confined in the area we apply voltage, and we demonstrate wave vector exchange by different bias, in conclusion, the tunable plasmon device has been present.
In second part of the thesis, we use the AlGaN/GaN HEMT which is applied to sensing application, the gateless structure is used in the study, due to surface state changed by charge, the sheet electron concentration of 2DEG being changed in order to maintain the charge neutrality, this is the reason why use it to be the sensor, we fabricate the nanoellipse arrays by nanospherical-lens lithography at the sensing region which LSPR response is at 980 nm, and we illuminate the 980 nm laser to find out variety of current, as well as monitor the temperature in experiment. Finally, we demonstrate the model of hot carrier which is created by LSPR effect, and how it inject to the device, as well as explain why does the current rise when 980 nm laser is illuminating.

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