本論文之目的是以溶液法來製備金屬摻雜氧化鎳，並將其當作電洞傳輸層來製備反向鈣鈦礦電池進而提升其表現。鈣鈦礦太陽能電池的結構為ITO/Metal-doped nickel oxide/Perovskite/PCBM/BCP/Ag。近年來，無機的金屬氧化物材料被廣泛應用於電洞傳輸層，其中氧化鎳是一個很早就被使用的p型材料，且使用氧化鎳做出來的元件較穩定，開路電壓(VOC)也較高，但是由於其電阻值相對較高，進而影響了元件的短路電流(JSC)。因此，許多文獻嘗試將其他金屬摻雜進氧化鎳，希望能達到降低其電阻率、改善表面平整度以及改變其能隙帶等效果，進而提升元件的短路電流，使整體的光電轉換效率(PCE)提升。本論文中採用溶液法的方式將金屬材料銅及鋰。首先，我們先配置0.1M的氧化鎳、銅及鋰的前置溶液，之後個別混和成1~7原子百分比的銅及鋰摻雜氧化鎳前置溶液中，之後將溶液以3000轉60秒旋塗在ITO玻璃基板上並退火400"℃" 1小時，最後進入手套箱製備成元件。實驗中發現在銅及鋰摻雜氧化鎳雖然會使穿透下降，但卻能使氧化鎳電阻率下降且讓鈣鈦礦的晶格長的更大。使用銅及鋰摻雜氧化鎳製備之元件分別可使短路電流由15.21mA/cm2提升至18.70mA/cm2及17.95 mA/cm2，效率由11%提升至13.81%及13.44%。

The objective of this paper is to present improved performance of perovskite solar cells (PSCs) based on Metal-doped nickel oxide. The structure of the PSCs is ITO/Metal-doped NiOx/Perovskite/PCBM/BCP/Ag. Recently, metal oxide materials have been frequently used as hole transport layer, e.g. nickel oxide (NiOx) has been used to increase life time and open-circuit voltage (VOC) of the solar cell. However, it decreases the short-circuit current density (JSC) of the devises because of the greater resistance. Therefore, Cu-doped NiOx was used to decrease the resistivity and at the same time to improve the film morphology. These facts can increase the JSC and power conversion efficiency (PCE) of the PSCs. In this paper we dope the NiOx with Cu and Li by solution-process. A 0.1M NiOx, Cu and Li precursor solutions were prepared by dissolving nickel acetate, copper acetate and lithium acetate into ethanol and ethanolamine. Finally, Cu-doped NiOx and Li-doped NiOx precursor solutions were prepared by mixing the NiOx precursor with Cu and Li precursor solutions. Subsequently, Cu-doped NiOx and Li-doped NiOx precursor solutions were spin- coated onto the ITO substrate and annealed. Finally, we transfer the substrates into the glove box to fabricate the devices. Although the transmittance of the Cu-doped NiOx and Li-doped NiOx decreases, the resistance decreases and the grain size increase. These facts lead to significant increase in cell performance. The JSC of the devices increases by about 15mA/cm2 to about 17mA/cm2, achieves a PCE about 13%.

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