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研究生: 吳文良
Wu, Wen-Liang
論文名稱: 異質原子摻雜氧化石墨烯奈米薄片於光催化分解水及記憶元件應用之研究
Study of Heteroatoms Doped Graphene Oxide Nanosheets for Photocatalytic Water Splitting and Memory Devices
指導教授: 蘇彥勳
Su, Yen-Hsun
學位類別: 碩士
Master
系所名稱: 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年: 2020
畢業學年度: 108
語文別: 中文
論文頁數: 99
中文關鍵詞: 微波輔助水熱法氮摻雜石墨烯硼摻雜石墨烯光電化學分解水反應記憶效應
外文關鍵詞: microwave-assisted hydrothermal method, nitrogen-doped graphene, boron-doped graphene, photoelectrochemical water splitting, memory effect
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  • 隨著全球能源危機的出現,再生能源開發之議題已經成為萬眾矚目的焦點,其中太陽能為一種可行的方法,而以光催化水分解反應最為重要。本實驗分為兩個部分,第一部分藉由微波輔助水熱法製備出氮摻雜氧化石墨烯並混合二氧化鈦於其中,再將其作為光電極運用於光電化學分解水之研究上,與傳統的水熱法相比,微波輔助水熱法是一種可將GO快速轉化為NGO的方法,也是一種將NGO與P25快速複合的方法。依據水分解實驗及建立的能帶結構圖,可發現當NGOP25(N10)作為電子收集器和水分解電極的活性材料時,NGOP25(N10)複合材料的光催化分解水效率最高,其施加偏壓光電之轉換效率(applied bias photon-to-current efficiency, ABPE)達2.51x10-4%。並藉由多種量測輔助可得知材料之特性,並建構出氮摻雜石墨烯與TiO2能帶相關位置,且從建立的能帶結構圖可以發現GO、rGO及NGO的費米面位置皆偏向導帶,呈現n-type半導體性質。第二部分實驗藉由微波輔助水熱法將硼元素摻雜進入氧化石墨烯中,此硼摻雜氧化石墨烯與還原氧化石墨烯複合後具有高對比的ON-OFF ratio特性,當其ln|I/Io|的值大於0.5或者小於-0.5代表其具有記憶效果,因此可利用此摻雜物對不同施加偏壓下及不同掃描速率下所擁有的不同ON-OFF ratio特性,而設計出利用不同電壓寫入,再由不同電流判讀的功能,如此一來便能應用在不同領域的記憶元件,如DRAM及SRAM。且依寫入和讀取的時間間隔不同,也會有不同的記憶結果,結果中發現間隔時間90s到間隔時間3天之間,隨著間隔時間的增加,會漸漸沒有記憶效果,此元件最長的記憶時間能達三天之久,當間隔三天之後便只能由電壓寫入,無法從電流判讀。

    In this research, this experiment is divided into two parts. In the first part, nitrogen-doped graphene (NGO) is prepared by microwave-assisted hydrothermal method and mixed with titanium dioxide. NGO is used as a photoelectrode for the study of photocatalytic water splitting. Compared with hydrothermal method, microwave-assisted hydrothermal method is a quick method to convert GO into NGO and form NGOP25 nanocomposite. According to the hydrogen production experiment and the determined energy band diagram, when NGOP25 is used as the active material for the electron collector and water splitting electrode, the nano-carbon ceramic composite electrode is suitable for water splitting. Through a variety of measurement aids, the characteristics of the material can be known, and the relevant position of its energy band diagram can be constructed. The second part of the experiment doped boron into graphene oxide by microwave-assisted hydrothermal method. This dopant solution has a high contrast ON-OFF ratio characteristic, so this dopant can be used to apply different bias voltages. With the different current delay response which effects at different scanning speeds, the function of using different voltage to write and then read by different current is designed. So, it can be applied to memory devices in different fields. Depending on the time interval between writing and reading, there will be different memory effects. The longest memory time of this device can be up to three days.

    內容 摘要 I Study of Heteroatoms Doped Graphene Oxide Nanosheets for Photocatalytic Water Splitting and Memory Devices II 目錄 XV 圖目錄 XVIII 表目錄 XXIV 第一章 緒論 1 1-1 前言 1 1-2 研究背景 2 1-3 研究動機 4 第二章 文獻回顧 5 2-1 太陽光譜 5 2-2 氫能源 7 2-3 光催化水分解原理 9 2-4 石墨烯基本性質 11 2-5 氧化石墨烯 12 2-6 氮摻雜氧化石墨烯(NGO) 13 2-7 硼摻雜氧化石墨烯(BGO) 15 2-8 微波輔助水熱法 16 2-9 半導體記憶體 17 第三章 研究方法 18 3-1 實驗材料 18 3-1-1 實驗藥品介紹 18 3-2 實驗流程 19 3-2-1 ITO基板清洗及電極製作流程 19 3-2-2 合成氮摻雜石墨烯與二氧化鈦之複合物 21 3-2-3 合成硼摻雜石墨烯 22 3-3 實驗分析方法 23 3-3-1 紫外-可見光分光光度計 (UV-Visible Spectroscopy) 23 3-3-2 高解析穿透電子顯微鏡(Ultrahigh Resolution Transmission Electron Microscope) 24 3-3-3 紫外光電子能譜 (Ultraviolet Photoelectron Spectroscopy, UPS) 25 3-3-4 化學分析電子能譜儀 (X-ray Photoelectron Spectroscopy,XPS) 26 3-3-5 電化學分析儀 27 第四章 結果與討論 29 4-1 氮摻雜石墨烯基本性質 29 4-1-1 氮摻雜石墨烯及石墨烯衍生物與P25(TiO2)複材表面型貌 29 4-1-2 氮摻雜石墨烯及石墨烯衍生物化學成分分析 32 4-1-3 氮摻雜石墨烯及石墨烯衍生物官能基分析 37 4-2 氮摻雜石墨烯及石墨烯衍生物能帶結構分析 38 4-2-1 能隙大小量測(紫外-可見光光譜 , UV/Vis spectrum) 38 4-2-2 價帶及費米面位置量測(紫外光光電子能譜儀, Ultra-violet Photoelectron Spectroscopy, UPS) 42 4-2-3 能帶結構圖 47 4-3 氮摻雜石墨烯電化學分析及產氫之應用 48 4-3-1 Mott-Schottky量測 48 4-3-2 循環伏安法 (Cyclic Voltammetry, CV) 50 4-3-3 線性伏安法 (Linear Sweep Voltammetry, LSV) 51 4-3-4 交流阻抗頻譜 (Electrochemical Impedance Spectroscopy, EIS) 56 4-4 硼摻雜石墨烯基本性質 58 4-4-1 硼摻雜石墨烯表面型貌及化學成分分析 58 4-4-2 硼摻雜石墨烯化學成分分析 62 4-4-3 硼摻雜石墨烯官能基分析 66 4-5 硼摻雜石墨烯能帶結構分析 67 4-5-1 能隙大小量測(紫外-可見光光譜 , UV/Vis spectrum) 67 4-5-2 價帶及費米面位置量測(紫外光光電子能譜儀, Ultra-violet Photoelectron Spectroscopy, UPS) 70 4-5-3 能帶結構圖 72 4-6 硼摻雜石墨烯電化學分析及記憶效應之應用 73 4-6-1 Mott-Schottky量測 73 4-6-2 線性伏安法 (Linear Sweep Voltammetry, LSV) 75 4-6-3 記憶效應 77 第五章 結論 93 第六章 參考資料 94

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