在本論文中我們研製以低壓有機金屬化學氣相沈積(LP-MOCVD)法成長的磷化銦(InP)系列異質接面雙極性電晶體，主要重點在於傳統元件結構的改良設計，元件特性量測與討論。
我們比較以磷化銦/砷化銦鎵(InP/InGaAs)為基礎的兩種異質接面雙極性電晶體。首先我們以四元材料磷砷化銦鎵(InGaAsP)取代傳統的窄能隙空間層及集極材料砷化銦鎵(InGaAs)，稱之為元件A，希望藉此獲得較佳的直流增益及崩潰電壓特性。另一方面，設計一僅在基極與集極間加入砷化銦鎵步階組成漸變層之元件，稱之為元件B，比較兩種結構對於元件的直流特性所造成的影響。由實驗數據顯示，兩結構均能有效提升元件的崩潰電壓，分別可達7.84V及6.58V；雖然由於射-基與集-基接面的不對稱性，造成元件A有較大的補償電壓，但是在直流增益方面，元件A的最大直流增益可達118，約為元件B的兩倍，且元件A有超過12個數量級的寬廣電流操作區域，這使得元件A可以廣泛的應用於低損耗功率消耗的電路中，比如說類比-數位轉換器及攜帶式無線通訊器材等。
在我們得到元件A有較好的直流特性的結論之後，我們再使用相同的結構，但是利用碳取代原本用來摻雜基極的鋅，稱之為元件C，由於碳在砷化銦鎵材料中有較低的擴散速率，因此即使增加基極摻雜濃度也不至於使摻雜質擴散至射極，而造成元件特性衰退。由實驗結果得知，由於基極使用了碳摻雜，使得元件C的最大直流增益可以達到368，但是卻犧牲了部分的操作區域，使得由原本的12個數量級的操作區域下降為10個數量級。

In this thesis, we present heterojunction bipolar transistors (HBTs) based on InP-based material system grown by a low-pressure-metal-organic chemical vapor deposition (LP-MOCVD) system. We focus on the improved designs of conventional device structures, the measurement and discussion of the device characteristics.
We investigated an npn InGaAsP/InGaAs/InP, denoted as device A, which has a composite-collector structure designed to improve the breakdown and gain. Then we compared the device performances with an InGaAs/InP utilizing compositionally step graded InGaAs layers between the InGaAs base and InP collector, denoted as device B, to suppress the current blocking effect. From the experimental results, both the structures can improve the breakdown characteristics of the InP-base devices. Although the quaternary material InGaAsP improved the dc characteristics of devices, it also increases the offset voltages of them due to the asymmetry between the E-B and B-C junctions. In the other hand, device A had larger breakdown voltage (7.84V), dc current gain (bmax＝118), and operation region (over 12 orders of magnitude of collector current) than device B. This implies that device A can be operated under a very wide current regimes especially in case of low-power system, e.g., A/D or D/A converters and portable wireless communications.
In chapter 3, a carbon-doped base was used to refine device A that is mentioned in chapter 2. It is well known that carbon has rather low diffusion constant in InGaAs to prevent the degradation of the device performance. From the experimental results, device C (carbon-doped base) has a relatively high dc current gain (bmax＝368) and a operation regime for 11 orders of magnitude of collector current. These result are conformed to the early studies such as improved gain. Though the dc current gain of device A (zinc-doped base) is only about one-third that of the device C, it exhibits almost flat common-emitter current gain of greater than 4 over 13 orders of magnitude of collector current. It is a quite wide operation range requisite indispensable.

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