本論文利用具有光觸媒性質的二氧化鈦(TiO2)，成功還原生長出直立式金屬奈米線，同時避免使用界面活性劑(surfactants)、模板(templates)、或是晶種(seeds)之合成方式，大幅增加金屬奈米線的導電性並且簡化製程。
本論文研究所使用的熱處理分為2階段式，第1階段為TiO2基材退火，此階段不但提供熱能使薄膜結晶化，並利用黑體輻射原理提供微量之UV光部分激發TiO2，產生光電子與金屬水溶液中金屬離子反應提供奈米線之成核點。第2階段為後熱處理(亦稱熱輔助光還原熱處理)，根據半導體之熱電原理提供後續的熱電子與金屬離子反應形成原子，依序堆疊在成核點上以生長成一維金屬奈米結構。本論文所建立之奈米生長模型，與文獻報導中並不相同，因此，在此把生長機制稱為“熱輔助光還原法”(thermally assisted photoreduction，TAP)。
此外，利用改變TiO2基材的結晶性、表面粗糙度、光觸媒性質、與從優選向等研究，探討基材與金屬奈米線生長的關連性。原子力顯微鏡(AFM)與X光繞射儀(XRD)顯示，當結晶性與表面粗糙度提升時，金屬奈米線生長的數量也會隨之增加，此意味著基材的結晶性與粗糙度會影響表面電子形成金屬奈米線成核點之難易度。TiO2基材之光觸媒性質指出，當TiO2表面具有超親水性對於成長金屬奈米線是不利的；反之，適當數量的電子散佈在TiO2表面使表面呈現疏水性才可以有效地還原出大量的奈米線；利用光激螢光(PL)與時間解析螢光光譜儀(TRPL)證實，(101)面具有較複雜的表面結構與較長的電子衰退時間，此暗示(101)面的生成有助於奈米線的成核。事實上，在高解析穿透式顯微鏡(HRTEM)下觀察到(101)面確實為奈米線的成核點。
最後，利用改變熱輔助光還原熱處理參數之條件，以調整此研究合成出之金屬線。實驗發現成長溫度越高時，會產生高數量與高長寬比的金屬奈米線；而成長時間越長，則越能將奈米線的尺寸均勻化。利用奈米操縱器(nano-manipulator)證實，本研究所製作出的金屬奈米線具有極佳的導電性，對於未來應用在奈米電子封裝材料具有極大的潛力。

Through the photocatalysis of titanium dioxide (TiO2), a novel method is developed in this study for fabricating metallic nanowires (NWs) without using seeds, surfactants or templates. It is verified that this method can simplify the manufacturing procedures and the nanowires thus produced exhibit excellent electrical conductivity. The heat treatment of this process can be divided into two steps: the first step is the annealing treatment for the TiO2 substrate, which can provide the heat energy for the crystallization of anatase TiO2, and also generate a small amount of UV sources to excite TiO2 by blackbody radiation. This activates electrons and holes on the surface of TiO2 films and enables the reduction of metallic ions from the solution, and subsequently forms the nucleation sites of nanowires. The second step is the post heat treatment for the growth of nanowires. In the post heat treatment, thermal-electrons in TiO2, an n-type semiconductor, can further reduce the metallic ions and thus the metal atoms accumulate and stack on the pre-formed nucleation sites along a certain preferred orientation to form one dimensional nanostructure. This thesis builds a brand new model for the synthesis of metallic nanowires, of which the nucleation and growth mechanisms are much different from the others in literatures. Accordingly, this unique method is named “Thermally Assisted Photoreduction, TAP” process.
Several experimental parameters are varied to clarify the relationship between the substrate and the yield of metallic nanowires, such as the degree of crystallization, surface roughness, photocatalytic ability and surface orientation. Atomic Force Microscope (AFM) and X-ray diffraction (XRD) results suggest that a better crystallinity, along with a rugged surface of anatase TiO2, gives rise to a higher yield of the nanowires. This means that the crystallinity and surface morphology of the anatase TiO2 substrate significantly influence the nucleation of nanowires. The super-hydrophilicity of TiO2, which means full excitation of TiO2, is harmful for the formation of nanowires. Conversely, a suitable number of photo-electrons on the surface of TiO2 under insufficiently excited conditions are required for forming nanowires. According to the results of Photoluminescence (PL) and Time Resolved Photoluminescence (TRPL), (101) oriented films which is capable of obtaining large quantity of nanowires exhibit a more complex surface structure, longer life time for photo-exited electrons and consequently a greater photocatalytic activity. The finding can be supported by high resolution transmission electron microscopy (HRTEM).
Furthermore, through the adjustment of the conditions of post heat treatment (time and temperature), the yield and aspect ratio, as well as the uniformity of the metallic NWs can be controlled. The electrical behavior investigated using a nanomanipulation device indicates that the metallic nanowires by the TAP process possess excellent electrical conductivity, which is believed to have a great potential for the application in nano-electronics packaging.

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