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研究生: 徐偉翔
Xue, Wei-Siang
論文名稱: 鎳金透明金屬電極之鈣鈦礦發光二極體
Perovskite Light-Emitting Diode with Ni/Au Transparent Metal Contact
指導教授: 賴韋志
Lai, Wei-Chih
學位類別: 碩士
Master
系所名稱: 理學院 - 光電科學與工程學系
Department of Photonics
論文出版年: 2016
畢業學年度: 104
語文別: 中文
論文頁數: 63
中文關鍵詞: 鎳金薄膜鈣鈦礦發光二極體晶體成長
外文關鍵詞: Ni/Au film, Perovskite, Light-emitting-diode, Crystal growth
相關次數: 點閱:81下載:2
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  • 本論文利用退火後的鎳金薄膜,當作電洞傳輸層和透明金屬電極,在Ni/Au薄膜上旋轉塗佈鈣鈦礦(CH3NH3PbBr3),完成有機-無機發光二極體元件。
    根據之前的研究,鎳金薄膜 (100Å/70Å)在500°C下通氧氣退火後會有較高的穿透率和較低的片電阻值,我們比較了一般以銦錫氧化物和氧化鎳為基底旋轉塗佈鈣鈦礦的發光二極體,對於主動層鈣鈦礦覆蓋的方法,採用於旋轉塗佈過程中滴入第二溶劑,快速攜出前溶液,這是一個瞬間改變飽和度的晶體成核法,為了再次提高鈣鈦礦的成膜品質,利用MA氣體做表面修飾,使鈣鈦礦主動層有更均勻且更緻密的表面,且在元件完成後,會得到比較高的亮度和更低的發光起始電壓。
    我們討論了鈣鈦礦薄膜的型態,晶粒大小與飽和度的關係,鈣鈦礦晶相組成,薄膜品質與元件亮度的關係,最後探討鈣鈦礦不同基板上親水性的差異,並推測其可能影響的原因。

    In this paper, the use of Ni/Au film after annealing, as a hole transport layer and a transparent metal electrode, and spin-coated on this film in a perovskite (CH3NH3PbBr3), light-emitting-diode element using a layer of Ni/Au film to simplify processes, extend component , the greater the possibility of brightness.
    According to previous studies, Ni/Au (100Å/70Å) after 500°C through oxygen annealing have a higher penetration and a low sheet resistance value, we compared the generally ITO and NiOx as a substrate perovskites light-emitting diode, for an active layer perovskite covered using a second solvent method, in order to improve the perovskite film quality again, the use of MA gas for surface modification, the perovskite layer has a more uniform and more dense surface, after completion of element, will be higher brightness and lower luminous turn on voltage.
    We discussed the state of the perovskite film, the relationship between the grain size and saturation, and perovskite crystal phase, the relationship of film quality and brightness , and finally discuss the hydrophilic that perovskite to differences substrate, speculation its possible effect .

    中文摘要 I Perovskite Light-Emitting Diode with Ni/Au Transparent Metal Contact II 誌謝 VIII 目錄 IX 圖目錄 XII 表目錄 XVI 第一章 序論 1 1.1 前言 1 1.2 鈣鈦礦發光二極體介紹 2 1.3 研究動機與目的 2 第二章 理論基礎 3 2.1 發光二極體簡介 3 2.1.1 p-i-n 結構 3 2.1.2載子複合 4 2.2 蒸鍍原理 4 2.3 晶體快速成核 5 2.4 MA處理 7 2.5 接觸角和表面自由能 8 2.6 奧斯瓦爾德規則和奧斯瓦爾德熟化 9 第三章 材料介紹、實驗流程和量測分析方法 10 3.1 材料介紹 10 3.1.1氧化鎳(NiOx) 10 3.1.2甲基銨溴化鉛(CH3NH3PbBr3) 10 3.1.3氯仿(CHCl3) 10 3.2 實驗流程、元件結構、元件能帶圖 11 3.2.1實驗流程 11 3.2.2元件結構 13 3.2.3元件能帶圖 15 3.3 量測分析方法 17 3.3.1 二極體光電特性分析 17 3.3.2 鈣鈦礦層SEM分析 17 3.3.3 鈣鈦礦層XRD分析 17 3.3.4 接觸角分析 18 第四章 實驗結果分析和討論 19 4.1 鎳金薄膜退火分析 19 4.2 鈣鈦礦薄膜光致發光分析 22 4.3 Ni/Au作為透明金屬電極鈣鈦礦發光二極體 24 4.3.1 Ni/Au元件滴入CF秒數分析 24 4.3.2 NiOx和Ni/Au元件比較 27 4.3.3 最佳NiOx和Ni/Au元件比較 32 4.3.4 3000轉和4000轉Ni/Au元件比較 35 4.4 主動層鈣鈦礦披覆SEM分析 38 4.4.1以NiOx和Ni/Au為基板成長的鈣鈦礦SEM分析 38 4.4.2以Ni/Au為基板成長的鈣鈦礦在不同轉速下的SEM 45 4.5 主動層鈣鈦礦XRD數據分析 50 4.5.1以NiOx和Ni/Au為基板成長的鈣鈦礦XRD分析 50 4.5.2以Ni/Au為基板成長的鈣鈦礦在不同轉速下的XRD分析 54 4.6 電洞傳輸層接觸角數據分析 55 第五章 結論和未來展望 59 5.1 結論 59 5.2 未來展望 60 參考文獻 61

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