由於氮化鎵具有極佳之光電特性，常用以製作發光二極體、雷射二極體、太陽能電池、光感測元件、高功率電晶體以及高載子遷移率電晶體。另外，一維奈米結構具有高比表面積與低缺陷濃度之獨特特性，已廣泛地應用於各種光電元件之製作。而本研究將結合氮化鎵與一維奈米結構之優勢，以本實驗室自行開發之爐管型電漿輔助化學氣相沉積系統，成長一維氮化鎵奈米結構。本研究成長氮化鎵材料採用自組裝之成長機制，以鎵金屬作為前驅物、以氮氣作為載流氣體去成長氮化鎵。
本實驗室已於先前的研究中，成功在Si基板及c-Sapphire基板上，成長出垂直於基板表面之氮化鎵奈米柱，並藉由掃描式電子顯微鏡、穿透式電子顯微鏡、顯微光致激發光譜儀，驗證其為六角形晶體、c-plane成長方向、低缺陷濃度且能隙約為3.42eV，並製作成以氮化鎵奈米柱為主體的發光二極體。
然而，為了調整氮化鎵奈米柱為主體的發光二極體之放光波長(365nm)到可見光區，而且使電子與電洞復合機率提升，故本研究藉由銦摻雜於氮化鎵晶體以形成氮化銦鎵晶體，並且藉由銦的組成百分比去調控能隙大小與放光波長，同時將氮化銦鎵薄膜層成長在p型與n型氮化鎵之間，形成單一量子井去侷限載子，以提高電子與電洞復合之機率，進一步增加發光二極體的發光效率。用銦金屬和鎵金屬作為前驅物、氮氣和氯氣作為載流氣體、以氫氣為輔助氣體，在相對低溫下成長氮化銦鎵晶體於氮化鎵奈米柱上，並藉由X光繞射儀去判別氮化銦鎵之生成與其能隙及放光波長。
並接續於氮化銦鎵晶體上成長p型氮化鎵晶體，然而為了避免低溫成長之氮化銦鎵晶體在成長p型氮化鎵時分解。故仍在相對低溫下，以鎵金屬和氮化鎂作為前驅物、氮氣和氯氣作為載流氣體，去成長p型氮化鎵晶體，藉由Micro-PL去判別p型氮化鎵之生成與其能隙及放光波長。
另一方面，為了避免載子跑到p-GaN/ InGaN/n-GaN的奈米柱結構之表面，與表面缺陷結合造成非輻射復合，故本研究在奈米柱結構的表面成長一層氮化鋁鎵晶體，作為奈米柱結構的表面保護層，以減少載子之損失，將能增加發光二極體的發光效率。在相對低溫下，以鋁金屬和鎵金屬作為前驅物、氮氣和氯氣作為載流氣體、以氫氣為輔助氣體去成長氮化鋁鎵晶體，並藉由XRD去判別氮化鋁鎵之生成。

This research is involving of five parts. They are sequentially the growth of GaN nanorods without doping, the growth of n-GaN nanorods with doping SiH4, Cl2-assisted InGaN growth, Cl2-assisted p-GaN growth with doping Mg3N2 and Cl2-assisted AlGaN growth. For GaN and n-GaN, high crystal quality as well as good uniformity of quality and nanorods’ density could be seen in PL and SEM. Then p-GaN epitaxial film was grown at 505℃ with appearance of characteristic peak around 425 nm in PL. On the other hand, InGaN epitaxial film was grown at 505℃ with 16% atomic indium estimated by XRD. Furthermore, AlGaN epitaxial film was grown at 600℃ with 68% atomic aluminum estimated by XRD.

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