在此原子解析的實驗中，我們利用氮電漿與可進行即時量測的掃描穿隧電子顯微鏡，研究高能量的氮原子源對於磊晶成長β-Si3N4薄膜在Si(111)基版的影響。比較在不同電漿氮化條件下（包括：氮化的溫度、後退火的溫度與時間）所成長的β-Si3N4磊晶薄膜的表面形貌，相較以往需要在900℃以上的高溫下進行熱氮化（thermal nitridation）過程的氮化成長，在750℃下即可使用氮電漿進行氮化成長，並可得到具有8×8重構的單晶表面，有效地降低了成長所需的溫度，且表面呈現完全氮化且沒有部份氮化的形貌。另外在室溫下電漿氮化的表面上，在進行後退火處理後，可以看到後退火處理可有效的幫助原子重新結晶排列。

The effect of energetic nitrogen source on crystalline β-Si3N4 growth on Si(111) substrate has been studied by using N2-plasma nitridation and in-situ scanning tunneling microscopy (STM). The β-Si3N4 epitaxial ultra-thin films were grown on the Si(111) substrate under different growth conditions including the nitridation temperature, annealing temperature, and annealing time. Without post-nitridation annealing, the one-step plasma nitridation growth shows the nitridation temperature can be decreased to 750 °C following the fact that the β-Si3N4(8×8) reconstruction surface having no partial nitridation area, which was much lower than previous thermal nitridation studies. Furthermore, using two-step growth, “thermal nitridation and post-nitridation annealing”, the effect of post annealing on the β-Si3N4 recrystallization has been examined on the room temperature plasma nitridation surface.

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