氧化鋅系統具有優異光電特性與應用前景，借助元素摻雜和熱處理結晶可提升在磁性方面的應用廣度。本研究除檢討CuZnO系粉末特性外，亦評估CuZnO薄膜熱擴散機制和光電磁性質關係，進而釐清ZnO wires/CuZnO結構應用機理。實驗結果顯示，透過水溶液法製備出不同比例CuxZn1-xO (x=0.33,0.5,0.67) 粉末，以500℃為退火溫度，可確認CuZnO粉末 (x=0.67) 易產生氧化亞銅相，將劣化電性及磁性。
實驗中利用磁控濺鍍法製作CuZnO薄膜。由於氧化鋅摻雜銅原子，使載子濃度提升進而鐵磁性增強、電性變佳。因Zn與Cu原子有交互擴散現象，使得氧化鋅拉曼光譜因此藍移。選擇較佳薄膜條件，透過低溫水溶液法在CuZnO薄膜上成長氧化鋅奈米線。由於奈米線出現了較多氧空缺及鋅間隙，使得氧化鋅載子濃度增加，進而改善電性及磁性。經熱處理後之ZnO wires/CuZnO薄膜，膜基地中銅原子擴散至氧化鋅奈米線中，可大幅增進本系統結構之光電磁特性。

There are excellent electro-optical properties and applications in ZnO system. It can enhance the appliance of magnetic properties by element doped and annealing. This research not only discussed the powder characteristic of CuZnO but also evaluated the thermal diffusion principle and optoelectro-magnetic connection in CuZnO thin film. Furthermore, it can clarify the related structure in ZnO wires/CuZnO. Through an aqueous solution method, it produced the CuxZn1-xO powders with different content ratios of CuO and ZnO (CuO: ZnO = 1 : 2, 1 : 1, and 2 : 1) after annealing in 500℃. It was easy to bring in Cu2O phase and deteriorated electrical and magnetic properties.
This work used magnetron sputtering to manufacture the CuZnO thin film. It improved the carrier concentration to make the stronger ferromagnetism and the better electrical property as a result of doping Cu atom in ZnO. Because of the Cu and Zn atoms mutual diffuse phenomenon, this consequence induced blue shift in ZnO raman spectrum.
This research chose the better parameter in thin film and grew with ZnO nanowires on the CuZnO thin film using aqueous solution method in lower temperature. The ZnO nanowires appeared lots of oxygen vacancies and interstitial zincs. It made carrier concentration improving and the better electrical and magnetic properties. After annealing in the ZnO wires/CuZnO thin film, the Cu atoms of matrix diffused into the ZnO nanowires. This consequence made much better in optoelectro-magnetic properties.

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