隨著顯示器尺寸發展越來越大，對於薄膜電晶體的載子遷移率的要求也越來越高，同時為了減少功率消耗，降低電晶體的操作電壓也是一個重要課題。本研究利用有高介電常數的氧化鎂及氧化鉿薄膜做為氧化鋅薄膜電晶體的介電層材料，研究其對電晶體的臨界電壓與載子遷移率的影響；同時針對施予閘極偏壓的條件下，研究電晶體的電性穩定性行為，透由在介電層上的不同電漿氣氛表面處理，改善氧化鋅內及氧化鋅與介電層界面的缺陷含量，提升電晶體的電性穩定性。
本研究第一部分為調變電子束蒸鍍氧化鎂薄膜時通入氧氣的流量，探討不同氧含量的氧化鎂薄膜的材料特性變化及對氧化鋅薄膜電晶體特性的影響。漏電流量測發現蒸鍍時通入氧氣可以降低氧化鎂的漏電流低於1×10-7 A/cm2，同時低掠角X光繞射結果觀察到蒸鍍時通入氧氣能讓氧化鎂的(111)結晶面成長。使用通入氧氣的氧化鎂做為介電層，氧化鋅薄膜電晶體的載子遷移率可以提高到78.3 cm2/Vs，臨界電壓為0.68V。透由X光光譜儀及穿透式電子顯微鏡研究氧化鎂內氧氣含量提升載子遷移率提高的原因。
第二部分則針對使用通氧氧化鎂介電層的氧化鋅薄膜電晶體，對閘極偏壓應力的電性穩定性研究。本研究將電晶體施加正閘極偏壓應力3秒及以負閘極偏壓照光進行復原動作，計算電晶體的有效載子捕獲密度及關電流變化，探討元件的臨界電壓偏移行為；同時利用O2、N2O及Ar三種氣氛，在氧化鎂及氧化鋅介面進行電漿處理1分鐘，藉以增加電晶體的電性穩定性。使用N2O電漿處理的元件，有最小的臨界電壓偏移，X光光譜結果顯示，N2O電漿處理可以抑制氧化鋅主動層在正閘極偏壓應力下的氧空缺生成，進而增加元件的電性穩定性。
第三部分研究則是同樣利用電子束蒸鍍高介電常數材料氧化鉿做為介電層，探討電晶體在閘極偏壓下的電性穩定性行為。氧化鉿表面亦使用O2及N2O兩種電漿氣氛處理，觀察與使用氧化鎂介電層元件的電性表現差異及電性穩定性提升的效果。使用高介電常數的氧化鉿，使氧化鋅電晶體元件與使用氧化鎂介電層一樣，擁有高達270 cm2/Vs的載子遷移率及0.43V的臨界電壓。由於介電常數的差異，使利用氧化鉿介電層的電晶體有較使用氧化鎂介電層的元件更好的電性表現，但在閘極偏壓應力電性穩定性上表現卻較差，透由電漿處理於氧化鉿表面可以稍微提升穩定性值。在單純負閘極偏壓照光下的研究，透由照射不同波長雷射發現，電洞被界面缺陷捕捉以及ZnO中帶電氧空缺捕捉電子先後造成元件的臨界電壓偏移，N2O電漿處理減少了界面及ZnO中的氧空缺，使臨界電壓偏移的量減少，增加元件的電性穩定性。

Thin film transistor-liquid crystal displays are already largely applied in our life. As the display is developed to the large size, transistor with high carrier mobility is required. At the same time, to achieve low power consumption, reduce the operation voltage is an important issue. In this study, MgO and HfOx with high dielectric constant were used as dielectric layer in ZnO-based thin film transistors. The transistor characteristic improvement including carrier mobility and threshold voltage is investigated. The electrical stability against gate bias stress is also studied. Different between MgO and HfOx are compared.
In the first part of this study, the performance of ZnO thin film transistors using MgO gate dielectrics evaporated with andwithout introducing oxygen have been investigated. The oxygen introduced during MgO deposition improves the field-effect mobility significantly as compared to the device without introducing oxygen during MgO deposition. The oxygen-introduced MgO exhibits a dielectric constant of 10.9 and the field-effect mobility of the TFT device is enhanced to 78.3 cm2/Vs. The threshold voltages can also be related to whether the oxygen is introduced into MgO or not. The interface between oxygen-introduced MgO and ZnO is examined and its connection with mobility enhancement is discussed.
In the second part of this study, plasma treatments with different gases applied on the MgO dielectric surface will amend the TFT’s electrical stability and x-ray photoelectron spectroscopy analysis is done nearby the ZnO/MgO interface to study the change of oxygen chemical bonding states. The results show that MgO dielectric without plasma treatment causes the threshold voltage shift of the transistor, which may be attributed to the migration of oxygen ion toward the ZnO/MgO interface to induce the generation of oxygen vacancies in ZnO active layer when devices are under positive gate bias stress. This instability behavior can be eliminated with N2O plasma treatment on MgO. N2O plasma treatment inhibits the generation of oxygen vacancies in ZnO against gate bias stress thus reduces the effective trap state density in the subgap of ZnO and thereby enhances the TFT’s stability. The detailed scenario for the plasma treatment effect is explored to conclude its mechanism on improving the electrical stability.
In the third part of this study, high-k HfOx was used as the dielectric layer of ZnO-based TFTs. The field-effect mobility of the TFT device is enhanced to 270 cm2/Vs and the threshold voltages can be lowed to 0.43 V. However, with large mount of oxygen vacancies in HfOx, the electrical stability of the devices aganst positive bias stress is worst than the device with MgO dielectric. But the stability can be improved by O2 and N2O plasma treatment on HfOx surface. The electrical stability against negative gate bias illumination of transistor with HfOx dielectric has also been investigated. With illuminated by difference wavelengh laser and calculating the subthreshold swing and analyzing the oxygen chemical bonding states nearby the ZnO/HfOx interface by x-ray photoelectron spectroscopy, the interface trapped state and oxygen vacancies existed in ZnO active layer are found to cause the threshold voltage shift. The stability of ZnO TFTs is improved with using N2O plasma-treated HfOx dielectric, as this eliminate the defect in the ZnO layer.

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