本論文主要製作與研究使用有機金屬化學氣相沉積系統成長砷化銦鎵/磷化銦光檢測器於磷化銦基板上，其中又分為長波長遠紅外線量子井光檢測器及通訊用紅外線光檢測器元件。
首先，我們成功於半絕緣磷化銦基板上成長與製作8 um量子井紅外線光檢測器，在十對量子井匹配於基板的元件下，得到最大響應度為20 A/W，相較於砷化鎵系列量子井紅外線光檢測器乃由於較大增益造成，產生在1.8 V 所對應之的正規化檢測度為1.5×1010 cmHz0.5W-1。於1%壓縮形變元件中，可得到小1000倍的暗電流且在1.3 V 所對應之的正規化檢測度為2.9×1010 cmHz0.5W-1。至於通訊用紅外線光檢測器方面，使用傳統PIN結構製作，在60 um 擴散窗口於 -5 V偏壓下可得暗電流105 pA 及 0.475 pF電容值，在1.3及1.55 m得到量子效率分別為71.9% 和93.6%，頻寬1kHz和偏壓-5 V下，進而推算出元件雜訊等效功率分別為4.53×10-14和2.95×10-14 W，而所對應之的正規化檢測度為3.69×1012 cmHz0.5W-1及5.67×1012 cmHz0.5W-1。
傳統結構製程適用2.5 Gb/s，為了更進一步將元件推向10 Gb/s，使用埋入式異質結構填入低濃度磷化銦材料，可以有效減低介電層感應空乏層電容和傳統結構比較下減少電容值達33%。最後，我們以埋入式異質結構填入低濃度磷化銦材料製作，在50 um擴散窗口於 -5 V偏壓下得暗電流21.5 pA及0.267 pF電容值，在1.3及1.55 m得到響應分別為0.72 和1 A/W，頻寬1k Hz和偏壓-5 V下，進而推算出元件雜訊等效功率分別為6.05×10-14和4.36×10-14 W，而所對應之的正規化檢測度為2.3×1012 cmHz0.5W-1及3.2×1012 cmHz0.5W-1。且於10Gb/s商業封裝條件測試下得到清晰且對稱眼圖。

The main goal of this dissertation is the fabrication and analysis of InGaAs/InP photodetectors growth on InP substrate by metalorganic chemical vapor deposition (MOCVD). The dissertation is divided into two parts, one is the investigation of long-wavelength quantum well infrared photodetectors (QWIPs), and the other is that of P-I-N infrared photodetectors for optical communication.
In the beginning of this dissertation, Ten-periods InxGa1-xAs/InP quantum-well infrared photodetectors (QWIPs) with and without compressive strain in the quantum-well region growth on SI-InP substrate were investigated. At a detection wavelength of 8 um, a high responsivity of 20 A/W is observed for the unstrained device, which is attributed to the higher gain of the InP-based material than that of the GaAs-based material and peak detectivity of 1.5×1010 cmHz0.5W-1 at 1.8V. Compared with the unstrained QWIP, the InGaAs/InP QWIP with 1% compressive strain (CS) in the QWs has demonstrated three orders of magnitude dark current depressions so that higher peak detectivity of 2.9×1010 cmHz0.5W-1 at 1.3V is observed for the device. For the 2.5 Gb/s optical communication, with -5 V applied bias, it was found that dark current and capacitance of the photodiode were 105 pA and 0.475 pF, respectively with 60 μm diameter for conventional InGaAs P-I-N photodetector, which corresponds to quantum efficiencies of 71.9 and 93.6%, respectively at 1.3 µm and 1.55 µm. For a given bandwidth of 1 kHz and a given bias of -5 V, it was found that noise-equivalent-power (NEP) our InGaAs PIN photodiode were 4.53×10-14 W at 1.3 µm and 2.95×10-14 W at 1.55 µm, which correspond to normalize detectivity (D*) values of 3.69×1012 cmHz0.5W-1 at 1.3µm and 5.67×1012 cmHz0.5W-1 at 1.55 µm. Furthermore, for 10 Gb/s application, InGaAs-based buried heterostructure photodetector (BH-PD) was proposed and fabricated. By introducing etching and refilling lower concentration semi-insulating InP, it was found that we can reduce the capacitance of the P-I-N PDs by 33% compared to conventional process. Finally, with -5 V applied bias, it was found that dark current and capacitance of the photodiode were 21.5 pA and 0.267 pF, respectively with 50 μm diameter for buried heterostructure photodetector (BH-PD), which corresponds to responsivity of 0.72 and 1 A/W, respectively at 1.3 µm and 1.55 µm. For a given bandwidth of 1 kHz and a given bias of -5 V, it was found that noise equivalent powers our InGaAs P-I-N BH-PD were 6.05×10-14 W at 1310 nm and 4.36×10-14 W at 1550 nm, which correspond to normalize detectivity (D*) values of 2.3×1012 cmHz0.5W-1 and 3.2×1012 cmHz0.5W-1, respectively. It was also found that show a clear eye-opening feature and are well operated at 10 Gb/s from the proposed BH-PD met with the requirements of the OC-192 standard.

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