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研究生：	藍柏偉 Lan, Bo-Wei
論文名稱：	成長鋅系列化合物半導體與其光特性研究 Growth of Zn-Based Compound Semiconductors and Their Optic Properties
指導教授：	張守進 Chang, Shoou-Jinn
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2010
畢業學年度：	98
語文別：	英文
論文頁數：	84
中文關鍵詞：	分子束磊晶、射頻磁控管濺鍍機、量子侷限效應
外文關鍵詞：	molecular beam epitaxy, RF magnetron sputter, quantum confinement effect
相關次數：	點閱：83 下載：0
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本論文中，主要探討ZnSe-Based合成的奈米線以及ZnO薄膜的製備。首先，對於ZnSe-Based奈米線主要探討利用分子束磊晶法(MBE)配合氣-液-固(VLS)機制來合成ZnSe、Zn1-xCdxSe、ZnSe/Zn0.98Cd0.02Se超晶格系列奈米線成長在(100)矽基板上。藉由改變鎘元素和鋅元素的含量發現所合成的奈米線會發生型態(morphology)上的改變，同時當鎘的含量為0.1和0.3時，從選區電子繞射圖發現Zn1-xCdxSe奈米線結構上同時包含閃鋅礦以及鎢材結構。奈米線長度大約數個微米，半徑大約在50~200奈米不等。此外由於鎘含量的改變對於ZnSe、Zn1-xCdxSe奈米線會造成能帶上的位移而造成發光波長的調變從藍光(493奈米)至紅光(622奈米)，這樣的位移可以大大增加奈米線在光電、感測元件的應用；另一方面，超晶格量子井奈米線ZnSe/Zn0.98Cd0.02Se在結構上也是以閃鋅礦以及鎢材結構存在，透過光激螢光譜的分析，我們發現超晶格的奈米線有一個量子侷限效應使得在光譜的強度上增加許多。探討過結構、光電特性，我們也將矽基板上的奈米線利用黃光製程製作成光偵測器，光暗電流比的提升是我們在製作光偵測器的最大探討方向，將Zn1-xCdxSe ( x=0.1, 0.3)中鎘的含量提升之後發現暗電流的下降，整體的提升光暗電流比，在元件的光暗反應時間比值Zn0.7Cd0.3Se也有較佳的一個反應時間。
再者，對於ZnO薄膜的製備主要是利用射頻磁控管濺鍍機分別將ZnO濺鍍在玻璃基板上和氧化銦錫玻璃基板上，再將成長完不同類型的試片經過回火分析其光特性，回火的溫度從500℃、600℃、700℃、800℃、900℃。從X-ray繞射圖可以確定ZnO薄膜為一個鎢材結構，進一步發現ZnO隨著回火的溫度提升，Grain Size有逐漸再結晶的趨勢，同時半高寬的值也隨著回火溫度上升而下降，這說明了經過回火之後的ZnO薄膜在晶格品質上有提升的效果。最後對於光激螢光譜和穿透率的分析，在回火900℃氧化銦錫玻璃基板上的ZnO薄膜具有高強度的光激螢光譜，將有助於我們對於發光元件上的應用。

In this thesis, we study two topics include fabrication of ZnSe-base nanowires and ZnO thin films. First, the ZnSe (or Zn0.9Cd0.1Se, Zn0.7Cd0.3Se, ZnSe/Zn0.98Cd0.02Se) nanowires used in this study were grown by a Riber 32P solid source molecular beam epitaxy (MBE) using vapor-liquid-solid (VLS) mechanism onto Si(100) substrate. By changing the composition of Cd and Zn, we can observe morphology change of the nanowire. Meanwhile, it was also found that the Zn1-xCdxSe nanowires were structurally uniform and composed of single-crystalline exhibit mixture of cubic zinc-blende and hexagonal wurtzite. The length of the nanowire about 1μm and 50-200 nm in diameter. On the other hand, the band-gap red shift phenomenon attributed to vary composition of Cd which from the wavelength 493 nm to 622 nm, the different band-gap shown that these one dimension semiconductor nano-structure exhibit unique physical, optical characteristic which enable them desirable in variety of nano-devices. For probe into structure, we fabricate super-lattice ZnSe/Zn0.98Cd0.02Se nanowires compare our previous (ZnSe, Zn1-xCdxSe) nanowires, we also can observe the mixture structure include zinc-blende and wurtzite from the SAED pattern. Furthermore, PL intensity become larger could be attributed quantum confinement effect. In order to do the advanced application so we then form the ultraviolet photodetectors using Zn1-xCdxSe (x=0.1, 0.3) nanowires, a thick Au film was plated through an interdigitated shadow mask over the nanowire to be the contact electrodes. The promotion of the photocurrent to dark current contrast ratio is our primary study point, by increasing the Cd components; we indeed found the promotion of the photocurrent to dark current contrast ratio and the fast response of turn-on and turn-off ration.
Second, we fabricated the ZnO thin films by using RF magnetron sputter method onto glass and ITO/glass substrate. RTA thermal treatments were carried out at different temperatures from 500◦C to 900◦C for each 100◦C in vacuum for these samples. Furthermore, it was also found that the ZnO thin films were structurally uniform and hexagonal wurtzite. Then, after annealing treatment at higher temperature, the sheet grains tend to coalesce and the FWHM decreases which could be explained the improvement of film quality. Last, for the analysis of PL, ZnO on ITO/glass substrate after annealing 900◦C possess high intensity PL that will lead us apply to opto-electronic devices.

Contents
Abstract (Chinese).........................................I
Abstract (English)........................................IV
Acknowledgement..........................................VII
Contents................................................VIII
Table Captions.............................................X
Figure Captions..........................................XIV
CHAPTER 1 Introduction.....................................1
1.1Background..............................................1
1.2 Overview of this thesis................................5
CHAPTER 2 Experimental Equipment and basic theory..........7
2.1 Experiment Equipment...................................7
2.1.1 Molecular Beam Epitaxy (MBE).........................7
2.1.2 Radio Frequency Sputter (RF-Sputter)................10
2.1.3 Atomic Force Microscopes (AFM)......................12
2.1.4 Field Emission Scanning Electron Microscope.........13
2.1.5 Field Emission Transmission Electron Microscopy.....14
2.1.6 High Resolution X-ray Diffraction (XRD).............15
2.1.7 Raman scattering spectrometer.......................16
2.1.8 Photoluminescence (PL) Spectrum System..............16
2.2 Basic theory..........................................19
2.2.1 Operation principle of MSM photodetector............19
2.2.2 Dark current of MSM photodetector...................20
2.2.3 Vapor-Liquid-Solid (VLS)............................21
CHAPTER 3 ZnSe-based Experimental Arrangement.............34
3.1 Zn1-xCdxSe nanowire and Photodetector.................34
3.1.1 Growing ZnSe-based nanowire on Si Substrate by MBE..34
3.1.2 Fabrication of ZnSe-based photodetector.............36
3.1.3 Optical properties of ZnSe-based photodetector nanwires..................................................36
3.2 quantum effect of ZnSe/ZnCdSe super-lattice nanwires..40
3.2.1 Growing ZnSe/ZnCdSe nanowire on Si substrate........40
3.2.2 Optical properties of ZnSe/ZnCdSe nanowires.........41
CHAPTER 4 ZnO film on Glass Experimental Arrangement......54
4.1 Growth of ZnO films on glass by RF sputter............54
4.2 Morphology and optical properties of ZnO films on glass.....................................................55
CHAPTER 5 ZnO film on ITO Experimental Arrangement........64
5.1 Growth of ZnO films on ITO by RF sputter..............64
5.2 Morphology and optical properties of ZnO films on ITO.65
CHAPTER 6 Conclusions and Future Work.....................74
6.1 Conclusions...........................................74
6.2 Future Work...........................................76
References................................................78

                                    

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校內：2011-07-06公開
校外：不公開電子論文尚未授權公開，紙本請查館藏目錄

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