此篇論文主要利用溶液式手法製備鈣鈦礦材料及生物性材料，並應用於非揮發性記憶體以及有機薄膜電晶體中。因此，論文主要分為兩部分，第一部分為鈣鈦礦材料應用於記憶體及電晶體之研究；第二部分為生物性材料應用於記憶體之研究。
首先，利用多次旋塗的多層溶膠凝膠鈦酸鋇薄膜應用於電阻式記憶體，在不用摻雜其他元素的情況下，改善元件特性。與單層鈦酸鋇電阻式記憶體相比，利用雙層鈦酸鋇薄膜堆疊，可使元件的阻值比由104提升至106，且滯留時間（retention time）在85度仍能維持105 s。
若將氧化石墨烯做為插入層應用於鈦酸鋇記憶體元件，可觀察到寫一次讀多次的特性。且將此結構作堆疊，可發現在堆疊後，阻值比為106，低阻態和高阻態的電流值可被大幅降低。
除了鈦酸鋇薄膜，也利用相同的溶膠凝膠手法製備出鈦酸鎂等薄膜。鈦酸鎂應用於電阻式記憶體的阻值比可達到104。為了進一步改善元件特性，新溶膠凝膠手法提出不需藉由摻雜和高溫烘烤等步驟，製備出四元化合物薄膜，鈦鎳酸鎂。將此薄膜應用於電阻式記憶體及有機薄膜電晶體中，發現元件特性有大幅提升的效果，如: 鈦鎳酸鎂電阻式記憶體的阻值比可提升至108。且由於此種手法所添加的乙酰丙酮鎳具有兩對雙牙基，除了可以使薄膜更平坦外，更能與鈦和鋯離子鉗合，使記憶體元件在大氣中放置多天後，仍能觀察到以下電性，如: 鈦鎳酸鎂電阻式記憶體的高阻態電流均勻性在放置28天後，仍可維持在30%。
論文的第二部分，藉由溶液式方式製備吉利丁（gelatin）薄膜，並應用於電阻式記憶體，此部分分為三個段落。（1）吉利丁電阻式記憶體：吉利丁電阻式記憶體的阻值比可達到106。並藉由EDX mapping的觀察，可發現在元件量測後，有碳燈絲形成，以及吉利丁與上電極鋁離子有鉗合作用發生；（2）鋁鉗合吉利丁（ACG）電阻式記憶體：利用鋁離子會和吉利丁鉗合，將吉利丁與鋁鹽作混合，製作出鋁鉗合吉利丁薄膜，應用於全透明的電阻式記憶體元件。發現若未能與鋁離子發生鉗合，ITO/gelatin/ITO結構幾乎無電阻轉換特性。但在ITO/ACG/ITO結構的阻值比可達到106。此結果主要原因為鉗合作用可幫助氧化還原的現象發生；（3）吉利丁於軟性電阻式記憶體之應用：可撓吉利丁電阻式記憶體之阻值比可達到105，低寫入電壓（<0.12 V），和retention為105 s。由於吉利丁有很好的延展性，在多次基板撓曲後，電流值仍很穩定。且在高低阻態的電流均勻性上分別為57.8%和3.3%。

In this dissertation, the perovskite oxides and biomaterial were prepared by solution process and applied to the nonvolatile memory and organic thin film transistor applications. Hence, the dissertation is divided into two parts, one is the investigation of sol-gel perovskite oxide-based devices, and the other is the investigation of solution biomaterial-based devices.
The multi-spin casting multilayered barium titanate (BTO) thin films on RRAMs without doping other elements were adopted to improve the memory performance. Compared with single BTO layered RRAM, the ON/OFF ratio of the two-layered BTO RRAM can be improved from 104 to 106. In addition, the retention time of over 105 s without fluctuation at 85 °C. Utilizing graphene oxide (GO) sandwiched between BTO layers, the memory devices exhibit a non-volatile WORM memory behavior. The HRS resistance, LRS resistance, and the ON/OFF ratio can be enhanced by stacking multi-BGB layer.
In addition to the BTO thin film, the MTO thin films were also fabricated by the similar sol-gel method. The ON/OFF ratios of Al/MTO/ITO structure was 104. To improve the performance of these devices, adding Ni in preparation of quaternary compound by sol-gel method without high annealing temperature process and doping impurities is proposed. For example, the ON/OFF ratio of 108 can be achieved for the MTN memory devices. Besides, Ni (II) acetylacetone possessing two pairs of BL can not only provide an extremely low polymerization rate for smooth surfaces, but contribute to the moisture resistivity. Thus, due to the strong bonding between Ti metal ion and BL enables the chelate effect to the stability, the memory devices have good memory properties after many days under an atmospheric environment. For instance, the current CVs of the MTN memory device are less than 30% after 28 d.
In the second part of this dissertation, the solution biomaterial, gelatin, was used to fabricate RRAM devices. This part divided into three sections. (1)Gelatin-based RRAM: The memory devices exhibited a high ON/OFF ratio of over 106 and a long retention time of over 105 s. From the EDX analysis results, the chelate effect and the simultaneous presence of carbon and oxygen elements in the rupture of filament paths can be observed. (2)Al chelated gelatin-based RRAM: the transparent gelatin thin film (transmittance~86%) is suitable for application in the transparent electrical and optical devices. However, the transparent ITO/gelatin/ITO structure cannot present the memory switching behavior. Due to the chelate effect can be developed to change the gelatin properties, that the ITO electrodes can be applied. The ITO/ACG/ITO structure shows high ON/OFF current ratio (>105), low operation voltage, good uniformity, and retention characteristics at room temperature and 85 °C. The enhancement of the resistive switching properties can be attributed to the chelate effect of Al ions with gelatin Al ions, further enhanced the redox reaction that occurred in the gelatin. (3)Flexible gelatin-based RRAM: the flexible gelatin-based RRAM shows good memory properties, including high ON/OFF ratio of more than 105, needless of a forming process, the low set voltage (<0.2 V), and the retention characteristics without noticeable change over a period of 105 s. Due to the good ductility of gelatin, there was no significant variation observed in the current levels upon severe bending. The memory devices also exhibited outstanding uniformity, ION with a CV of 3.3% and IOFF with a CV of 57.8%.

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