本論文研究交流電輔助光致化學氧化法在n型氮化鎵材料上的壓印。對於各種氧化的條件與壓印圖形的控制作了一系列的探討。由實驗可知，在n型氮化鎵上壓印出的氧化圖形結果與壓印時的壓力有絕對的關係，當壓印壓力值小於9kg/cm2時，無法完整在n型氮化鎵材料上壓印出氧化圖形。
在外加交流操作偏壓值 3V以下，氧化圖形的氧化速率隨著外加的交流操作偏壓增加而增加，這是由於外加偏壓增加造成 的濃度增加所影響。繼續加大交流操作偏壓，當偏壓值大於 3V以後，氧化速率開始趨於平緩大約12 nm/min，且不再隨著偏壓的增加而有明顯的增加。
更進一步的實驗結果顯示，氧化層厚度與氧化的時間，呈現線性關係，即使厚度高於350nm，在本實驗裡依然還沒看到飽和的情形產生。在壓力值9kg/cm2、外加交流操作偏壓 3V與 5V的壓印條件下，可以在n型氮化鎵材料表面，壓印出帶有圖形且厚度可高於350nm的氮化鎵氧化物。

In this study, the AC applied photo-electro-chemical (PEC) oxidation is applied to n-type GaN by imprint. We would like to report the results of the AC applied PEC oxidation with different oxidation conditions. We find that the defined n-GaN oxidation areas were strongly depended on the pressure of the imprint. The imprinted n-GaN oxidation areas could not be well defined when the imprint pressure was less than 9kg/cm2.
Oxidation rate increases with increasing the applied AC voltage as the applied voltage less than 3V and then the oxidation rate saturates at 12nm/min as the applied AC voltage larger than 3V. The increase of the oxidation rate with increasing applied AC voltage might be from the increase of concentration with increasing applied AC voltage.
Moreover, the thickness of the oxidation layer was linearly increased with the oxidation time and saturation in oxide thickness is not observed in this study. The thickness of the imprinted gallium oxide on n-GaN layer could be more than 350 nm under an imprint pressure of 9 kg/cm2 and applied AC voltages of 3V and 5V.

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