本論文主要在探討極性溶劑對於電洞傳輸層PEDOT:PSS之影響，為極性溶劑沖洗的實驗，由於鈣鈦礦前體溶液通常由極性溶劑製備，因此了解PEDOT:PSS層的極性溶劑處理對鈣鈦礦太陽能電池性能的影響對於元件加工優化很重要。本文中，研究了用溶劑，包括二甲基亞砜(DMSO)和γ-丁內酯(GBL)對PEDOT:PSS層進行表面處理對鈣鈦礦太陽能電池元件性能的影響。在極性溶劑處理後測量PEDOT:PSS膜的電導率增加。直接沉積在溶劑沖洗的 PEDOT:PSS 薄膜上的鈣鈦礦太陽能電池的元件性能較差。最後，PEDOT:PSS 被NiOx取代作為電洞傳輸層，因此成功製造不會受到極性溶劑影響的元件。第五章我們提出了一個元件模型來研究碘化亞銅對MAPbI3鈣鈦礦薄膜對轉換效率的貢獻，並證明碘化亞銅的添加劑量會影響薄膜的晶粒尺寸和轉換效率。PL 測量結果表明，在MAPbI3鈣鈦礦薄膜中添加0.75%的碘化亞銅,PL 強度降低，表明電荷複合減少。證明碘化亞銅在MAPbI3鈣鈦礦薄膜缺陷鈍化中起關鍵作用，可以減少非輻射複合,增加元件的填充因子和開路電壓。

We investigates that the effect of polar solvents on the hole transport layer PEDOT:PSS and NiOx. Since perovskite precursor solution is typically prepared from polar solvents, understanding the effect of polar solvents treatment of the PEDOT:PSS layer on the performance of perovskite solar cells is important for device processing optimization. Here, the influence of the surface treatment of the PEDOT:PSS layer with solvents, including dimethyl sulfoxide (DMSO), and γ-butyrolactone (GBL), on the device performance of perovskite solar cells was investigated. Increased conductivity was measured for the PEDOT:PSS film after solvent treatments, which was ascribed to the partial removal of the PSS component from the PEDOT:PSS layer, as evidenced by photoluminescence spectroscopy, UV–vis absorption spectroscopy and XPS spectroscopy. In comparison with the reference cell, poorer device performance was obtained for the perovskite solar cells directly deposited on the solvent washed PEDOT:PSS film. Finally, PEDOT:PSS was replaced by NiOx as a hole transport layer, so successful fabrication of the device won't be affected by polar solvents.
We proposed a device model to investigate the contribution of cuprous iodide (CuI) to MAPbI3 perovskite thin films to power conversion efficiency (PCE) and demonstrated that the dosage of CuI affects the grain size of thin films and the PCE. Through the results of the SEM analysis, we found that the grain boundaries of MAPbI3 perovskite films decreased with increases in the dosage of CuI and the grain size increased significantly from 164 nm ± 49 nm–299 nm ± 127 nm. In addition, the results of the PL measurement showed that the PL intensity decreased after addition of CuI to the MAPbI3 perovskite thin films, suggesting a reduction in the charge recombination. The XRD patterns indicated that the addition of CuI did not influence the main structure of the MAPbI3 perovskite. Interestingly, CuI plays a key role in the passivation of defects in MAPbI3 perovskite thin films, which can reduce non-radiative recombination and increase the fill factor and open-circuit voltage of the device. In this study, we adjusted the grain size and passivated the MAPbI3 thin film by controlling the dosage of CuI. We also increased the power conversion efficiency from 10% to 13%. This type of perovskite solar cell provided a simple, low cost preparation process for practical applications

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