本論文旨在探討快速退火(RTA)對於以非晶矽材料(α-Si)為感測元件的遠紅外線微輻射熱感測器的影響。人利用不同光罩設計出九種不同正方形之元件結構。同時改變元件尺寸，由15um至50um，以5um為一個，共得8種不同尺寸。最後，使用各種不同溫度的快速熱退火 (分別為400oC、450 oC、500 oC、550 oC，保持退火時間為1分鐘)去探討此72種元件之電性與溫度電阻係數(TCR)之變化。
此外，利用SEM分別量測薄膜結晶及觀察表面結構和厚度藉以探討α-Si薄膜材料的特性及做最佳製程選擇。元件I-V特性則以HP4156半導體量測分析儀來進行量測，並利用變溫系統控制量測腔體之溫度。實驗結果發現：隨著退火溫度之提升，感測層α-Si之電阻有明顯下降且TCR值皆大於最低需求的2%；因而元件感測能力也隨著操作溫度升高而增加。但當退火溫度提高至550 oC時，雖然電阻值仍然下降，但其TCR值卻小於2%，也就是元件已被損壞。
歸納不同設計元件之測量數據，吾人發現Type P (金屬與α-Si皆為 double leg 者)為最佳設計。雖然其雙層皆為Double Leg設計，電阻值會較大， 但此設計的熱隔絕也較佳，因此可得較高TCR值來彌補。又當雙層之設計越緊密吻合時，元件對於溫度感測之TCR特性及靈敏度也較高。再結合懸浮結構，可得到特性最佳之微輻感測器。

In this thesis, we discuss the effect of using rapid thermal anneal (RTA) on the amorphous silicon (α-Si) applied in different structures infrared microbolometers as sensing element. Using various masks, we have designed nine split structures for the infrared sensor, i.e., a square structure with size length from 15um to 50um increased with a step of 5um. Then we investigated electrical resistance and TCR (temperature coefficient of resistance) of the α-Si element, and the sensing characteristics of the sensors. The HP4156 semiconductor element measuring analyzer was applied to explore electrical and TCR values of the α-Si after a RTA with annealing temperature from 400˚C to 550 ˚C varied per 50 ˚C and kept all of the annealing time at 1 minute. We found that, as increasing the anneal temperature, the α-Si sensing layer resistance decreased significantly, but their TCR values were all still above the 2% minimum requirement. In addition, among the all designs, the type P has gained the best sensing performance. Even in this design, its resistance is large for the double leg structure used in both metal contact and α-Si sensing layers, but the double leg can achieve a better thermal isolation, and thus obtains a higher TCR value to compensate the decreased resistance value. Besides, the less space between the legs, the higher in sensitivity and the better in TCR characteristics have been observed.

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