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研究生： 陳威佑
CHEN, WEI-YOU
論文名稱： 紅外飛秒雷射重複頻率調控矽與碳化矽表面改質：奈米力學性質及銅金屬化層附著與抗刮特性之研究
Infrared Femtosecond Laser Modification of Silicon and Silicon Carbide: Repetition-Rate-Dependent Nanomechanical Properties and Copper Metallization Adhesion
指導教授： 張晉愷
Chang, Chin-Kai
學位類別： 碩士
Master
系所名稱： 工學院 - 機械工程學系
Department of Mechanical Engineering
論文出版年： 2026
畢業學年度： 115
語文別： 中文
論文頁數： 164
中文關鍵詞： 飛秒雷射 、重複頻率 、銅金屬化 、奈米刮痕 、界面附著
外文關鍵詞： femtosecond laser, repetition rate, copper metallization, nanoscratch, interfacial adhesion
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    • 半導體金屬化層之抗刮與界面破壞行為，受到基板性質及表面加工條件共同影響。本研究以矽（Si）與碳化矽（SiC）為基板，利用波長1030 nm之紅外飛秒雷射進行表面改質，探討重複頻率對基板奈米力學性質及約300 nm銅（Cu）金屬化層抗刮特性之影響。實驗固定脈衝選擇器（PP）頻率為1250 kHz，調變器（MOD）輸出頻率分別設為125、625及1250 kHz。未鍍膜基板採Power 40%面加工及70%、100%線加工，進行奈米刮痕與壓痕試驗；鍍膜試片則先沉積Cu薄膜，再於Power 40%下進行雷射面加工與刮痕試驗。刮痕載重由0線性增加至50 mN，長度為500 μm，並結合刮痕深度、側向力及掃描式電子顯微鏡（SEM）形貌判讀失效行為。
    未鍍膜基板結果顯示，Si與SiC對雷射加工條件具有不同響應。Power 40%下，Si於125、625及1250 kHz之末端表觀刮痕深度分別約為453、598及654 nm，均高於未改質試片之358 nm；SiC則維持約200 nm，整體深度變化較小。奈米壓痕結果顯示，硬度與彈性模數並未隨Power或頻率呈單調變化，且部分較高Power條件下的量測離散程度增加，反映局部接觸反應的差異。由於40%與70%、100%採用不同掃描形式，跨組差異應視為整體製程條件之影響。
    Cu金屬化系統中，Si/Cu主要呈現塑性犁削與逐漸刮穿。未改質、125、625及1250 kHz之連續刮穿載重分別為41.95、40.49、44.81及44.64 mN，其中625與1250 kHz較未改質試片增加約6.8%及6.4%。SiC/Cu則以界面分離與片狀脫層為主要失效形貌，相應脫層臨界載重分別為24.62、25.57、36.09及36.06 mN，其中625與1250 kHz增加約46.6%及46.5%。上述數值為依SEM破壞位置換算之代表性刮痕結果。
    綜合而言，雷射處理後之銅金屬化層須依基板支撐、薄膜塑性變形與失效模式進行評估，刮痕深度、刮穿載重及脫層載重應分別解讀。本研究觀察到625與1250 kHz條件下較高的抗刮穿與抗脫層載重，但此表觀指標不能直接等同本徵界面附著能；兩頻率間之差異與改善幅度的重現性，仍需重複臨界載重量測確認。

    This study investigated the effects of infrared femtosecond laser repetition rate on the nanomechanical properties of Si and SiC substrates and the scratch failure of approximately 300 nm Cu films. A 1030 nm laser was operated at a fixed Pulse Picker frequency of 1250 kHz, with Modulator frequencies of 125, 625, and 1250 kHz. Uncoated substrates underwent area scanning at Power 40% and line scanning at Power 70% and 100%, followed by scratch and indentation tests. Coated specimens were laser processed after Cu deposition using area scanning at Power 40%. Progressive-load scratches from 0 to 50 mN were evaluated using depth, lateral force, and SEM morphology. At Power 40%, Si scratch depth increased with repetition rate, whereas SiC depth remained near 200 nm. Indentation responses were nonmonotonic, with greater scatter in some higher-Power groups. Representative Si/Cu breakthrough loads increased from 41.95 mN to 44.81 and 44.64 mN at 625 and 1250 kHz. Corresponding SiC/Cu delamination loads increased from 24.62 mN to 36.09 and 36.06 mN. These results indicate changes in scratch damage resistance under the tested conditions, rather than a direct measurement of intrinsic interfacial adhesion.

    摘要 I Abstract II 表目錄 VIII 圖目錄 IX 第一章緒論 1 1.1 研究背景 1 1.2 研究動機 2 1.3 研究目的 4 第二章 文獻回顧 5 2.1 飛秒雷射與材料交互作用及重複頻率效應 5 2.1.1 飛秒雷射能量沉積與材料超快響應機制 5 2.1.2 雷射重複頻率、單脈衝能量與脈衝重疊效應 5 2.1.3 多脈衝累積效應、Incubation Effect 與熱累積機制 7 2.1.4 飛秒雷射誘發表面形貌、再凝固與缺陷結構 8 2.2 Si 與 SiC 基板之材料特性及飛秒雷射響應 9 2.2.1 Si 基板之材料特性與奈米機械行為 9 2.2.2 Si 表面之飛秒雷射改質與微結構轉變 10 2.2.3 SiC基板之材料特性與奈米機械行為 11 2.2.4 SiC之紅外飛秒雷射改質機制及 Si/SiC 響應差異 12 2.3 Si 與 SiC 之奈米刮痕變形與材料移除機制 14 2.3.1 奈米刮痕之接觸行為與正向力、側向力機制 14 2.3.2 單晶 Si 之奈米刮痕塑性變形、相變與脆性破壞 15 2.3.3 SiC之延性刮削、裂紋萌生與脆性材料移除 16 2.3.4 Si與 SiC刮痕形貌之判讀及雷射改質效應 17 2.4 Cu 金屬化薄膜之力學行為與 Cu/Si、Cu/SiC 界面特性 19 2.4.1 Cu 金屬化薄膜之結構與奈米尺度塑性變形 19 2.4.2 300 nm Cu 薄膜之基板效應與薄膜－基板耦合行為 19 2.4.3 Cu/Si 與 Cu/SiC 界面結合及基板差異 20 2.4.4 飛秒雷射對 Cu 金屬化層及 Cu/半導體雙層系統之作用 22 2.5 Cu 金屬化層之刮痕失效模式、抗刮性與附著性判定 23 2.5.1 漸增負載刮痕試驗與臨界負載之定義 23 2.5.2 延性 Cu 薄膜於刮痕過程之失效模式 24 2.5.3 Cu/Si與Cu/SiC系統之抗刮穿能力與附著性判定 25 第三章 實驗設計與設備 27 3.1 實驗原理 27 3.2實驗設計流程 28 3.3實驗設備與儀器 33 3.3.1超快速雷射雙平台加工機 33 3.3.2共濺鍍系統 35 3.3.3奈米壓痕試驗機 37 3.3.4高解析熱場發射掃描式電子顯微鏡 40 3.3.5 雙束型聚焦離子束 II 42 第四章 結果與討論 45 4.1 飛秒雷射重複頻率對 Si 與 SiC 基板刮痕行為之影響 45 4.1.1 未改質 Si 與 SiC 基板之基準刮痕行為 45 4.1.2 Si和SiC基板經POWER40%不同重複頻率雷射改質後之表面形貌與抗刮性 49 4.1.3 Si和SiC基板經POWER70%不同重複頻率雷射改質後之表面形貌與抗刮性 62 4.1.4 Si和SiC基板經POWER100%不同重複頻率雷射改質後之表面形貌與抗刮性 73 4.1.5不同雷射功率與重複頻率對 Si 與 SiC 基板刮痕行為之綜合比較 84 4.2 飛秒雷射改質對 Si 與 SiC 基板奈米壓痕行為與機械性質之影響 86 4.2.1 奈米壓痕試驗之分析方式與未改質基準 86 4.2.2 Si 基板於 Power 40%、70%及100%之壓痕行為 88 4.2.3 SiC 基板於 Power 40%、70%及100%之壓痕行為 95 4.2.4 Si 與 SiC 之硬度、彈性模數及載重－位移響應綜合比較 101 4.3 飛秒雷射重複頻率對 Cu/Si 與 Cu/SiC 薄膜系統刮痕及界面附著行為之影響 102 4.3.1 刮痕破壞判定方式與表觀臨界載重 103 4.3.2 Si/Cu 薄膜系統之刮痕行為與抗刮穿能力 104 4.3.3 SiC/Cu 薄膜系統之界面脫層與表觀附著行為 115 4.3.4 Si/Cu 與 SiC/Cu 破壞模式差異之基板力學與熱物性機制 127 4.3.5 Si/Cu 與 SiC/Cu 之綜合比較 129 4.3.6 銅薄膜試片重複刮痕試驗與量測差異 131 參考資料 146

    [1] B. N. Chichkov, C. Momma, S. Nolte, F. von Alvensleben, and A. Tünnermann, “Femtosecond, picosecond and nanosecond laser ablation of solids,” Applied Physics A, vol. 63, pp. 109–115, 1996. doi: 10.1007/BF01567637.
    [2] K. Sugioka and Y. Cheng, “Ultrafast lasers—reliable tools for advanced materials processing,” Light: Science & Applications, vol. 3, e149, 2014.
    [3] M. Malinauskas, A. Žukauskas, S. Hasegawa, Y. Hayasaki, V. Mizeikis, R. Buividas, and S. Juodkazis, “Ultrafast laser processing of materials: from science to industry,” Light: Science & Applications, vol. 5, e16133, 2016.
    [4] T. Feng, G. Chen, H. Han, and J. Qiao, “Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change,” Micromachines, vol. 13, no. 1, 14, 2022. doi: 10.3390/mi13010014.
    [5] J. Bonse, S. Baudach, J. Krüger, W. Kautek, and M. Lenzner, “Femtosecond laser ablation of silicon—modification thresholds and morphology,” Applied Physics A, vol. 74, pp. 19–25, 2002. doi: 10.1007/s003390100893.
    [6] R. Zhang, A. McDowell, F. Hegmann, R. Fedosejevs, and Y. Y. Tsui, “A study of incubation effects in femtosecond laser irradiation of silicon and copper,” Applied Physics A, vol. 129, 131, 2023. doi: 10.1007/s00339-022-06334-x.
    [7] Q. Fu, J. Qian, G. Wang, and Q. Zhao, “Heat accumulation effects in femtosecond laser-induced subwavelength periodic surface structures on silicon,” Chinese Optics Letters, vol. 21, 051402, 2023. doi: 10.3788/COL202321.051402.
    [8] G. Li, Q. Zhu, R. Fan, L. Ding, Y. Long, L. Yuan, and W. Wei, “Synergistic mechanism of thermal accumulation and shielding effects in burst-mode femtosecond laser ablation of SiC,” Optics & Laser Technology, vol. 198, 114917, 2026. doi: 10.1016/j.optlastec.2026.114917.
    [9] Y. Huang, Y. Zhou, J. Li, and F. Zhu, “Femtosecond laser surface modification of 4H-SiC improves machinability,” Applied Surface Science, vol. 615, 156436, 2023. doi: 10.1016/j.apsusc.2023.156436.
    [10] Y. Hua, F. Wang, Z. Liu, and Y. Cai, “Thermo-fluid-field effects on material removal and surface integrity evolution during femtosecond laser processing of 4H–SiC: A multiscale numerical-experimental investigation,” Journal of Materials Research and Technology, vol. 43, pp. 6654–6670, 2026. doi: 10.1016/j.jmrt.2026.07.174.
    [11] Z. U. Rehman and K. A. Janulewicz, “Structural transformations in femtosecond laser-processed n-type 4H-SiC,” Applied Surface Science, vol. 385, pp. 1–8, 2016. doi: 10.1016/j.apsusc.2016.05.041.
    [12] M. Wang, C. Tian, R. Zheng, Y. Liu, M. Wei, Q. Li, Y. Li, Y. Li, Y. Zong, and X. Zhao, “Effects of single- and multi-pulse femtosecond laser irradiation on N-type 4H-SiC surface morphology, structural transformation, and accompanying defect generation,” Optics & Laser Technology, vol. 193, 114189, 2026. doi: 10.1016/j.optlastec.2025.114189.
    [13] W.-S. Lee, T.-H. Chen, C.-F. Lin, and S.-L. Chang, “Load Effects on Nanoindentation Behaviour and Microstructural Evolution of Single-Crystal Silicon,” Materials Transactions, vol. 51, no. 7, pp. 1173–1177, 2010. doi: 10.2320/matertrans.M2010007.
    [14] F. La Via, D. Alquier, F. Giannazzo, T. Kimoto, P. Neudeck, H. Ou, A. Roncaglia, S. E. Saddow, and S. Tudisco, “Emerging SiC Applications beyond Power Electronic Devices,” Micromachines, vol. 14, no. 6, 1200, 2023. doi: 10.3390/mi14061200.
    [15] Y.-H. Liu and C.-W. Cheng, “The Experimental and Modeling Study of Femtosecond Laser-Ablated Silicon Surface,” Journal of Manufacturing and Materials Processing, vol. 7, no. 2, 68, 2023. doi: 10.3390/jmmp7020068.
    [16] J. Bonse, K.-W. Brzezinka, and A. J. Meixner, “Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy,” Applied Surface Science, vol. 221, no. 1–4, pp. 215–230, 2004. doi: 10.1016/S0169-4332(03)00881-X.
    [17] A. Nawaz, W. G. Mao, C. Lu, and Y. G. Shen, “Nano-scale elastic-plastic properties and indentation-induced deformation of single crystal 4H-SiC,” Journal of the Mechanical Behavior of Biomedical Materials, vol. 66, pp. 172–180, 2017. doi: 10.1016/j.jmbbm.2016.11.013.
    [18] L. Wang, Y. Zhao, Y. Yang, M. Zhang, and Y. Zhao, “Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser,” Micromachines, vol. 13, no. 8, 1291, 2022. doi: 10.3390/mi13081291.
    [19] B. Meng, J. Zheng, D. Yuan, and S. Xu, “Machinability improvement of silicon carbide via femtosecond laser surface modification method,” Applied Physics A, vol. 125, 69, 2019. doi: 10.1007/s00339-018-2377-8.
    [20] J. Zhang, Z. Liu, Y. Zhang, F. Geng, S. Wang, F. Fan, Q. Zhang, and Q. Xu, “High-Power Femtosecond Laser Processing of SiC Ceramics with Optimized Material Removal Rate,” Micromachines, vol. 14, no. 10, 1960, 2023. doi: 10.3390/mi14101960.
    [21] M. Ge, H. Zhu, P. Ge, and C. Zhang, “Investigation on residual scratch depth and material removal rate of scratching machining single crystal silicon with Berkovich indenter,” Materials Science in Semiconductor Processing, vol. 100, pp. 98–105, 2019. doi: 10.1016/j.mssp.2019.04.037.
    [22] J. Hu and Q. Zeng, “Friction and Wear in Nanoscratching of Single Crystals: Effect of Adhesion and Plasticity,” Nanomaterials, vol. 12, no. 23, 4191, 2022. doi: 10.3390/nano12234191.
    [23] D. Meng, Y. Li, Z. Jiang, and M. Lei, “Stick-climb-slip induced damage mode in Cu/Si(100) thin films deposited by modulated pulsed power magnetron sputtering during scratch,” Vacuum, vol. 174, 109233, 2020. doi: 10.1016/j.vacuum.2020.109233.
    [24] S. Shi, Y. Yu, N. Wang, Y. Zhang, W. Shi, X. Liao, and N. Duan, “Investigation of the Anisotropy of 4H-SiC Materials in Nanoindentation and Scratch Experiments,” Materials, vol. 15, no. 7, 2496, 2022. doi: 10.3390/ma15072496.
    [25] J. Liu et al., “Coupled SPH-FEM modeling of Berkovich indenter scratching of single-crystal silicon,” Materials Science in Semiconductor Processing, vol. 173, 108155, 2024. doi: 10.1016/j.mssp.2024.108155.
    [26] S. Zare Chavoshi, S. Corujeira Gallo, H. Dong, and X. Luo, “High temperature nanoscratching of single crystal silicon under reduced oxygen condition,” Materials Science and Engineering: A, vol. 684, pp. 385–393, 2017. doi: 10.1016/j.msea.2016.11.097.
    [27] X. Li, Z. Fan, S. Huang, M. Lu, and H. Huang, “Brittle-to-ductile transition in nanoscratching of silicon and gallium arsenide using Berkovich and Conical tips,” Applied Surface Science, vol. 637, 157934, 2023. doi: 10.1016/j.apsusc.2023.157934.
    [28] P. Chai, S. Li, and Y. Li, “Modeling and Experiment of the Critical Depth of Cut at the Ductile–Brittle Transition for a 4H-SiC Single Crystal,” Micromachines, vol. 10, no. 6, 382, 2019. doi: 10.3390/mi10060382.
    [29] J. Xi, X. Ban, Z. Hui, W. Ba, L. Deng, and H. Qiu, “Investigating Surface Morphology and Subsurface Damage Evolution in Nanoscratching of Single-Crystal 4H-SiC,” Micromachines, vol. 16, no. 8, 935, 2025. doi: 10.3390/mi16080935.
    [30] S. Suresh, T.-G. Nieh, and B. W. Choi, “Nano-indentation of copper thin films on silicon substrates,” Scripta Materialia, vol. 41, no. 9, pp. 951–957, 1999. doi: 10.1016/S1359-6462(99)00245-6.
    [31] S. Zak, C. O. W. Trost, P. Kreiml, and M. J. Cordill, “Accurate measurement of thin film mechanical properties using nanoindentation,” Journal of Materials Research, vol. 37, no. 7, pp. 1373–1389, 2022. doi: 10.1557/s43578-022-00541-1.
    [32] R. Saha and W. D. Nix, “Effects of the substrate on the determination of thin film mechanical properties by nanoindentation,” Acta Materialia, vol. 50, no. 1, pp. 23–38, 2002. doi: 10.1016/S1359-6454(01)00328-7.
    [33] N. Chawla, S. H. Venkatesh, D. R. P. Singh, and T. Alford, “Characterization and adhesion in Cu/Ru/SiO₂/Si multilayer nano-scale structure for Cu metallization,” Journal of Materials Engineering and Performance, vol. 22, no. 4, pp. 1085–1090, 2013. doi: 10.1007/s11665-012-0359-0.
    [34] A. Brendel, C. Popescu, C. Leyens, J. Woltersdorf, E. Pippel, and H. Bolt, “SiC-fibre reinforced copper as heat sink material for fusion applications,” Journal of Nuclear Materials, vols. 329–333, Part A, pp. 804–808, 2004. doi: 10.1016/j.jnucmat.2004.04.304.
    [35] C.-W. Cheng, S. Y. Wang, K. P. Chang, and J. K. Chen, “Femtosecond laser ablation of copper at high laser fluence: Modeling and experimental comparison,” Applied Surface Science, vol. 361, pp. 41–48, 2016. doi: 10.1016/j.apsusc.2015.11.055.
    [36] B. Kim, H. K. Nam, S. Watanabe, S. Park, Y. Kim, Y.-J. Kim, K. Fushinobu, and S.-W. Kim, “Selective laser ablation of metal thin films using ultrashort pulses,” International Journal of Precision Engineering and Manufacturing-Green Technology, vol. 8, no. 3, pp. 771–782, 2021. doi: 10.1007/s40684-020-00272-w.
    [37] S. Wang, L. Wang, S. Zhang, H. Zheng, C. Zhang, S. Liu, F. Liu, and G. J. Cheng, “A low-damage copper removal process by femtosecond laser for integrated circuits,” Vacuum, vol. 203, 111273, 2022. doi: 10.1016/j.vacuum.2022.111273.
    [38] Z. Xu, J. Wu, J. Huo, C. Zhang, K. Wang, K. Wang, J. Li, Q. Zhang, X. Yan, and K. Zhu, “Heat transfer process of high-repetition rate picosecond laser scribing ablation micron copper film on silicon substrate,” Optics & Laser Technology, vol. 192, 113434, 2025. doi: 10.1016/j.optlastec.2025.113434.
    [39] S. J. Bull, “Failure modes in scratch adhesion testing,” Surface and Coatings Technology, vol. 50, no. 1, pp. 25–32, 1991. doi: 10.1016/0257-8972(91)90188-3.
    [40] J. Li and W. Beres, “Scratch test for coating/substrate systems—A literature review,” Canadian Metallurgical Quarterly, vol. 46, no. 2, pp. 155–173, 2007. doi: 10.1179/cmq.2007.46.2.155.
    [41] ASTM International, ASTM C1624-22, Standard Test Method for Adhesion Strength and Mechanical Failure Modes of Ceramic Coatings by Quantitative Single Point Scratch Testing, West Conshohocken, PA, USA, 2022. doi: 10.1520/C1624-22.
    [42] D. Meng, Y. G. Li, Z. T. Jiang, and M. K. Lei, “Scratch behavior and FEM modelling of Cu/Si(100) thin films deposited by modulated pulsed power magnetron sputtering,” Surface and Coatings Technology, vol. 363, pp. 25–33, 2019. doi: 10.1016/j.surfcoat.2019.02.008.
    [43] C. H. Seah, S. Mridha, and L. H. Chan, “Adhesive strength of electroplated copper films,” Journal of Materials Processing Technology, vol. 114, no. 3, pp. 252–256, 2001. doi: 10.1016/S0924-0136(01)00624-0.
    [44] S. D. McAdams, T. Y. Tsui, W. C. Oliver, and G. M. Pharr, “Effects of interlayers on the scratch adhesion performance of ultra-thin films of copper and gold on silicon substrates,” Materials Research Society Symposium Proceedings, vol. 356, pp. 809–814, 1995. doi: 10.1557/PROC-356-809.

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