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研究生：	林欣柔 Lin, Hsin-Jou
論文名稱：	反應性濺鍍高A軸取向氮化鈧鋁鑽石薄膜之特性與壓電性質研究 Characterization and piezoelectric properties of reactively sputtered highly A-axis ScAlN thin films on diamond structure
指導教授：	黃肇瑞 Huang, Jow-Lay
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學及工程學系 Department of Materials Science and Engineering
論文出版年：	2013
畢業學年度：	101
語文別：	中文
論文頁數：	109
中文關鍵詞：	A軸氮化鋁、氮化鈧、鑽石、表面聲波、快速升溫退火
外文關鍵詞：	A-axis AlN, ScN, Diamond, SAW device, Rapid Thermal Annealing
相關次數：	點閱：96 下載：7
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隨著無線通訊的發展，應用於射頻頻段的表面聲波濾波器朝向高頻、寬頻寬、高散熱發展，由於傳統使用的單晶表面聲波基板材料，其波速低、散熱差，鑽石基板具有最高的表面波速及優良散熱性質，結合C軸取向氮化鋁壓電薄膜做為高頻表面聲波基板已被廣泛討論及發表。氮化鋁壓電薄膜其優點為居禮溫度極高、散熱佳、波速快，但缺點為壓電係數過低。在氮化鋁薄膜內摻雜鈧後，由於薄膜內結晶結構改變，使得薄膜壓電係數增加。壓電薄膜之結晶成長方向提供不同表面聲波性質，並進而影響薄膜壓電特性的主要因素，近年來發展出A軸取向的氮化鋁薄膜可激發兩種不同型態的波，因此具有優異的表面聲波特性，使A軸氮化鋁薄膜既可以應用於通訊產業中也在生醫方面極具發展性。本研究主要成長A軸取向氮化鈧鋁薄膜於鑽石基板，結合多種材料特點，形成一創新複合高溫壓電材料。
本實驗第一部份，使用反應性濺鍍的方式濺鍍A軸取向氮化鋁薄膜於鑽石基板上，研究製程條件與薄膜特性之關係。實驗結果顯示：A軸從優取向之氮化鋁薄膜具有比C軸從優取向之氮化鋁薄膜具有更平坦的表面形貌，且壓電係數為3.31 pC/N，為C軸氮化鋁 (1.8 pC/N)約2倍。並使用快速升溫退火製程達到使晶粒成長、消除缺陷以有效改善薄膜結晶性，進而提升薄膜的壓電性質。本實驗第二部份，使用雙靶共鍍濺鍍A軸取向氮化鈧鋁薄膜於鑽石基板上。研究歸納出高A軸從優取向氮化鈧鋁薄膜之低溫製程參數，其薄膜壓電係數值至4.93 pC/N，並利用快速退火機制提升薄膜結晶性及壓電係數至8.1 pC/N，為C軸氮化鋁 (1.8 pC/N)約4.5倍可作為高溫使用新型高壓電係數材料。

With the development of wireless communication system, the surface acoustic wave devices (SAW) are expected to use in high frequency, wide band gap, and high thermal conductivity. Among all substrate materials of SAW devices, diamond substrate has the highest acoustic wave velocity and good thermal conductivity, which can improve the disadvantages of SAW devices. Diamond coupled with c-axis Aluminum Nitride (AlN) thin films have been widely studied and published. Wurtzite AlN thin films have been widely used in SAW devices, because it has high phase velocity, high thermal conductivity and the highest Curie temperature, but the piezoelectric coefficient d33 of AlN is too low. Different orientations of piezoelectric ﬁlms form different surface acoustic properties. (100) AlN films can provide two different acoustic waves and better surface acoustic wave properties. (100) AlN is a promising material in communication systems and biosensor. Doping Sc in AlN films enhance the piezoelectric coefficient because films structure change. From our research, we prepared highly a-axis ScAlN piezoelectric thin films on diamond substrate to form innovative piezoelectric material.
The first part in our experiment, we use DC sputtering system to prepare a-axis AlN on diamond substrate and analyze characterization of different oriented AlN films. The results shows that a-axis AlN has better surface morphology and piezoelectric coefficient up to 3.31 pC/N, which is near twice of c-axis AlN (1.8 pC/N) . The RTA process improves crystalline and piezoelectric coefficient. The second part in our experiment, we use co-sputtering system to prepare a-axis ScAlN films on diamond substrate and piezoelectric coefficient is 4.93 pC/N. The RTA process improves crystalline and piezoelectric coefficient after annealing at 300 ℃ without N2. From our research, we conclude a preliminary low-temperature experimental process to enhance the piezoelectric properties of ScAlN thin films up to 8.1 pC/N which is nearly four times larger than pure AlN. The result is expected to boost the properties of surface acoustic wave filter devices.

第一章 緒論.................................................1
  1-1前言..................................................1
  1-2研究動機...............................................1
第二章 文獻回顧............................................13
  2-1電漿的產生............................................13
  2-2濺鍍.................................................15
    2-2-1反應式濺鍍........................................15
    2-2-2射頻磁控濺鍍......................................21
  2-3薄膜的成核與成長.......................................21
  2-4氮化鋁薄膜............................................24
    2-4-1氮化鋁的基本特性...................................24
    2-4-2氮化鋁的壓電效應...................................27
  2-5具有高度從優取向之氮化鋁薄膜及其應用.....................29
  2-6高A軸取向氮化鋁薄膜....................................37
  2-7反應性濺鍍製備氮化鈧鋁薄膜..............................39
  2-8快速升溫退火製程.......................................41
  2-9快速升溫退火製程對薄膜結晶性之影響.......................43
第三章 實驗方法與步驟.......................................44
  3-1實驗流程圖............................................44
  3-2實驗的材料............................................45
  3-3實驗設備..............................................45
  3-4濺鍍的步驟與條件.......................................48
    3-4-1基材前處理........................................48
    3-4-2濺鍍流程..........................................48
    3-4-3快速升溫退火製程...................................48
  3-5鍍層的分析............................................50
    3-5-1濺鍍速率的測量....................................50
    3-5-2X-ray 繞射分析....................................50
    3-5-3 微結構觀察.......................................51
    3-5-4橫截面微結構觀察...................................51
    3-5-5成份與化學鍵結分析.................................51
    3-5-6薄膜壓電係數分析...................................52
第四章 結果與討論...........................................54
  4-1製備具有高A軸取向(100)氮化鋁薄膜於鑽石薄膜基板............54
    4-1-1工作壓力對於濺鍍高A軸取向氮化鋁之影響................54
    4-1-2工作距離對於濺鍍高A軸取向氮化鋁之影響................61
  4-2(100)與(002)氮化鋁鑽石薄膜微結構及壓電性質比較...........65
    4-2-1XRD微結構分析.....................................65
    4-2-2表面微結構及粗糙度分析.............................65
    4-2-3橫結構微結構分析...................................69
    4-2-4(100)氮化鋁薄膜成長機制............................69
    4-2-5不同從優取向氮化鋁薄膜之壓電性質分析.................77
  4-3快速升溫退火製程對於A軸氮化鋁鑽石薄膜壓電效應之影響........79
    4-3-1化學成份分析......................................79
    4-3-2表面粗糙度........................................79
    4-3-3XRD微結構分析.....................................79
    4-3-4經快速升溫退火製程之氮化鋁薄膜壓電係數分析............83
    4-3-5化學鍵結分析......................................85
  4-4高A軸取向氮化鈧鋁鑽石薄膜之特性與壓電性質研究.............87
    4-4-1反應濺鍍速率......................................87
    4-4-2 XRD微結構分析....................................87
    4-4-3化學成份分析......................................89
    4-4-4橫截面微結構分析...................................89
    4-4-5表面粗糙度........................................94
    4-4-6氮化鈧鋁薄膜壓電係數...............................94
    4-4-7快速升溫退火製程對氮化鈧鋁薄膜壓電係數的影響..........97
第五章 結論...............................................102
參考文獻..................................................104


                                    

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