本論文主要是在研究在先進PMOS A製程中常發生在6個電晶體SRAM (Static Radon Access Memory)有SiGe short to Poly 所引起的電性異常，而造成製程裹足不前，於此，我將整合現有的電性數據、故障分析技術、機台資源，對此異常點進一步探討，以期在最短時間內，能有效率地解決此問題。

為了在最短時間內，有效率地找出問題的元凶，一般的故障分析方法常有潛在問題的發現，於此，我們需改變故障分析的手法，將其再進化，發展新的分析技術，以期能以最快的時間，提供製程的改善。

此新的故障分析技術有二，其一是在電性分析，對C-AFM (Conductive Atomic Force Microscopy) 分析作調整，其二是在物性分析，對TEM (Transmission Electron Microscopy) 試片的製備作調整，結合此兩種分析的調整，我們在分析的過程中，減少不必要的時間上的浪費，機台資源的浪費，節省了人力與機台上的分配，進而能再多得到資源上的利用。

This thesis is to study advanced PMOS process often occurs SiGe short to Poly and induced abnormal electrical in 6T(6 Transistor) SRAM(Static Radon Access Memory), caused the process to be not going ahead, I will integrate the existing electrical data, failure analysis technology, machine resources. For this abnormal point, we will further explore and resolve this problem more effectively in the shortest possible time.

Usually the failure analysis methods are often potential problems and identify the major killer in the shortest possible time, we need to change the tactics of the failure analysis and make further progress, the development of new analytical techniques are to help process improvement with the fastest time.

This new failure analysis techniques there are two, one in the electrical analysis, analysis of the C-AFM(Conductive Atomic Force Microscopy) make adjustments, and the second is the physical analysis, the TEM (Transmission Electron Microscopy) specimen preparation make adjustments, combined with this adjustment of the two analysis, In the analysis process, we are reducing waste of unnecessary time, waste of machine resources, saving the allocation of human and machine table, and gain more the use of resources.

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[3] “Study of Nano-Probing Reliability and its Applications for deep sub-micro CMOS Technology Failure Analysis” Wen-Sheng Wu(NCKU 2010)
[4] “Fault Isolation of Dense High RC array by Using Conductive Atomic Force Microscopy” Wei- Shan Hu, Hui-Wen Yang and Yung-sheng Huang(ISTFA 2011)
[5] “Comparison of Active and Passive Voltage Contrast for Failure Localization” R. Rosenkraz, W. Werner(ISTFA 2007)
[6] “Experiment study on Crystal/Amorphous Structure of TEM Samples Perpared by FIB Milling” Qiang Gao, Mark Zhang, Chorng Niou, Ming Li, W.T. Kary Chien(ISTFA 2006)
[7]半導體物理與元件 Donald A. Neamen著．楊賜麟 譯 p.469
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