本研究利用創新設計之低溫氣相冷凝系統製備出低溫鍍製之本質氧化鎵薄膜，再藉由矽元素摻雜製出N型矽摻雜氧化鎵薄膜，將低溫鍍製本質氧化鎵薄膜與N型氧化鎵薄膜堆疊於P型氮化鎵基板上，成功製備出P型氮化鎵/I型氧化鎵/N型矽摻雜氧化鎵之深紫外光發光二極體元件。
其分析內容分為本質氧化鎵與N型矽摻雜氧化鎵薄膜，並探討薄膜特性。在本質氧化鎵方面，分析室溫鍍製氧化鎵薄膜(RT-Ga2O3)與低溫鍍製氧化鎵薄膜(LT-Ga2O3)之薄膜特性，其在低溫環境下成長之氧化鎵薄膜可有效降低薄膜的內部氧缺陷與鎵缺陷，透過高溫熱處理提升薄膜之結晶特性並經由霍爾量測可知其載子濃度為1.05×1015 cm-3；另一方面，為了有效製作出N型氧化鎵薄膜，將採用氧化鎵粉末與二氧化矽粉末進行共蒸鍍，利用高溫熱處理使得氧化鎵薄膜摻入矽元素，藉由改變蒸鍍源靶材重量，製作出不同矽摻雜含量的N型氧化鎵薄膜，最後利用霍爾量測與能量分散式光譜儀進行薄膜分析，可知薄膜中之矽摻雜量增加使濃度由1.05×1015 cm-3提升至2.20×1017 cm-3，並對光學能隙進行探討，由於二氧化矽光學能隙(Eg = 9 eV)遠大於氧化鎵之光學能隙(Eg = 5.19 eV)，故不同矽摻雜N型氧化鎵薄膜之光學能隙將隨著矽摻雜量的增加而有所提升；此外，亦對於薄膜的結晶特性進行分析，由於矽離子(Si4+)的離子半徑為0.41 Å，而鎵(Ga3+)離子的離子半徑為0.62 Å，因此薄膜中的矽離子(Si4+)取代鎵(Ga3+)離子時，導致單位晶胞體積與晶格常數減小，而使得薄膜中特徵鋒值由30.48o增加至30.51o。本研究將本質與N型矽摻雜之氧化鎵薄膜應用於P-I-N發光二極體結構中，成功製備出順向起始偏壓為11.6 V且發光波段位於241 nm之深紫外光發光二極體元件。

In this study, an intrinsic gallium oxide film and an N-type gallium oxide film were fabricated using an innovative vapor cooling condensation system to prepare a deep ultraviolet light-emitting diode.
The gallium oxide film deposited in a low temperature environment (LT-Ga2O3) has a lower defect than the gallium oxide film deposited at room temperature (RT-Ga2O3), and the crystallization characteristics of the film are improved by high temperature heat treatment. On the other hand, the gallium oxide powder and the silicon dioxide powder are co-evaporated, and then an n-type gallium oxide thin film is formed by high temperature heat treatment. As the number of grams of silicon dioxide increases, the optical energy gap increases and the carrier concentration increases from 1.05 x 1015 cm-3 to 2.20 x 1017 cm-3. In addition, since the ionic radius of the silicon ion (Si4+) is 0.41 Å, and the ionic radius of the gallium ion (Ga3+) is 0.62 Å, the lattice constant decreases when the silicon ion replaced the gallium ion. This increases the XRD diffraction angle from 30.48o to 30.51o.
Using the structure of P-GaN/I-Ga2O3/N-Ga2O3, we successfully fabricated a deep ultraviolet light-emitting diode with a forward starting bias of 11.6 V and an emission band of 241 nm.

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