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研究生：	林君曄 Lin, Chung-Yeh
論文名稱：	利用電漿輔助式分子束磊晶在矽金字塔基板上成長氮化鎵奈米柱壓電奈米發電器 GaN Nanorod Piezoelectric Nanogenerator Grown by Plasma-assisted Molecular Beam Epitaxy with Si Pyramid Substrate
指導教授：	吳忠霖 Wu, Chung-Lin
學位類別：	碩士 Master
系所名稱：	理學院 - 物理學系 Department of Physics
論文出版年：	2015
畢業學年度：	103
語文別：	中文
論文頁數：	55
中文關鍵詞：	氮化鎵、奈米線、奈米發電器、矽金字塔基板、壓電性
外文關鍵詞：	GaN, nanowire, nanogenerator, silicon pyramid, piezoelectricity
相關次數：	點閱：76 下載：0
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奈米壓電發電器(Piezoelectric Nanogenerator)是新穎的發電裝置之一，大多數的奈米壓電發電器是在磨平拋光的矽基板上成長奈米線製作而成，由於奈米線在平的矽基板上無法展現奈米線可彎折的優勢，因此本論文使用矽金字塔基板成長氮化鎵奈米線作為奈米發電器(下稱金字塔奈米發電器)，並且對其壓電性進行探討以及比較。
本論文將介紹氮化鎵奈米線的性質，金字塔基板的製作，氮化鎵奈米發電器的原理，以及金字塔氮化鎵奈米線發電器的製作與量測。最後證實金字塔奈米發電器的效能高於平基板奈米發電器。

Piezoelectric Nanogenerator is a new frontier of harvesting ambient mechanical energy. Currently, the most common structure of piezoelectric nanogenerators is vertical integrated nanowire nanogenerator (VING). However, the VING was hardly utilized the piezoelectric advantage of blending nanowires. Here, using molecular beam epitaxy system (MBE), we have built a GaN nanowires nanogenerator based on silicon pyramid substrate to harvesting more mechanical energy and compare with traditional VING structure. The experimental results show that nanowire nanogenerator based on silicon pyramid substrate is substantially superior than the VING nanogenerator in terms of output piezoelectric voltage.

目錄

第一章	前言	1
1.1	壓電奈米發電器的發明	1
1.2	VING結構壓電奈米發電器	1
1.3	在金字塔基板上的奈米線的可能優勢	2
第二章	實驗原理以及機制	4
2.1	矽金字塔的生成	4
2.1.1	矽晶圓的濕式蝕刻	5
2.1.2	非等向性蝕刻	5
2.1.3	矽金字塔的生成	7
2.2	氮化鎵的性質	9
2.2.1	氮化鎵概覽	9
2.2.2	氮化鎵的壓電性	10
2.3	氮化鎵奈米線在分子束磊晶系統的成長	11
2.4	奈米線壓電奈米發電器	14
2.4.1	奈米線的壓電性質	14
2.4.2	奈米發電器的發電器制	16
第三章	實驗儀器	20
3.1	電漿輔助式分子束磊晶系統(Plasma assisted molecular beam epitaxy, PAMBE)	20
3.2	濕式工作臺(wet bench)	22
3.3	掃描式電子顯微鏡(Scanning Electron Microscope, SEM)	23
3.4	旋轉塗佈儀(Spin Coater)	24
3.5	光致螢光光譜儀(photoluminescence spectroscopy, PL)	25
第四章	實驗方法以及量測	26
4.1	矽金字塔基板的製備	26
4.1.1	金字塔蝕刻	26
4.2	氮化鎵奈米線在金字塔基板上的成長	29
4.3	光致螢光光譜(Photoluminescence Spectrum)量測	33
4.4	氮化鎵奈米線發電器的製備	34
4.4.1	旋轉塗佈PMMA	34
4.4.2	Contact、電極、封裝與絕緣的製作	36
第五章	量測與分析	40
5.1	量測設備與方法	40
5.2	VING發電器(平基板)的壓電性量測	42
5.3	金字塔基板GaN奈米線發電器的壓電性量測	47
5.4	小結與討論	50
第六章	總結	51
6.1	結論	51
6.2	展望	51
參考文獻	52

表目錄
Table 1氫氧化鉀在不同矽晶面上的蝕刻速率	6
Table 2 KOH溶液，無IPA無PEG，20度	26
Table 3 KOH溶液，無IPA無PEG，60度	26
Table 4 KOH溶液，無IPA無PEG，80度	26
Table 5 KOH溶液，IPA 4%，無PEG，80度	27
Table 6 NaOH溶液1.5%，IPA 4%，PEG，80度	27
Table 7 VING結構奈米發電器與金字塔奈米發電器比較	43

圖目錄

Figure 1 A demostration of VING nanogenerator	III
Figure 2  A illustration of GaN nanowires grown on silicon pyramid substrate	IV
Figure 3 1. The formation of silicon pyramid substrate 2. The growth of GaN nanowires in MBE 3. PMMA spin coating 4. Making conductive contact 5. Packaging and shielding	IV
Figure 4 Cross section of silicon pyramid substrate	V
Figure 5 Silicon pyramids in different etching conditions	VI
Figure 6 Top view of GaN nanowires grown on silicon pyramid substrate	VII
Figure 7 Cross section of GaN nanowires grown on silicon pyramid substrate.	VII
Figure 8: PMMA on GaN nanowires, the length of nanowires are around 1.8μm, PMMA are filled between nanowires and covered the top of nanowires.	VIII
Figure 9 Apply silver paste to make contact, using conductive tape as electrode, packed up with insulating tape and aluminum foil.	IX
Figure 10 Voltage output of VING nanogenerator and pyramid generator. Pyramid generator have ~10mV of output voltage, with VING nanogenerator ~2.5mV under the same pressure.	X
Figure 11 VING結構奈米發電器示意圖 	2
Figure 12 矽金字塔基板示意圖 	3
Figure 13 成長在金字塔基板上的氮化鎵奈米線	3
Figure 14 本論文所使用的金字塔基板正面	4
Figure 15 矽金字塔基板側面	5
Figure 16 等向性與非等向性蝕刻示意圖	6
Figure 17 未加入IPA的KOH蝕刻	7
Figure 18 加入IPA的KOH蝕刻	8
Figure 19 氫氣泡泡在金字塔基板蝕刻中的作用	8
Figure 20 10~40μm的矽金字塔	9
Figure 21 烏采晶體的四面體結構	10
Figure 22 烏采晶體結構圖示	10
Figure 23 烏采晶體結構C軸方向受壓後會造成電偶極的改變	11
Figure 24 氮化鎵薄膜	12
Figure 25 氮化鎵奈米線	13
Figure 26 氮化鎵成長條件圖	13
Figure 27 氮化鎵晶面圖	14
Figure 28 氮化鎵奈米線的六角柱SEM圖	14
Figure 29晶格彎折示意圖	15
Figure 30 ZnO奈米線側向施壓的壓電壓分布模擬圖	16
Figure 31 晶格彎折造成電偶極示意圖	16
Figure 32 VING 結構奈米發電器結構示意圖	17
Figure 33奈米發電器的發電器制流程圖	17
Figure 34壓電奈米發電器受力前後	18
Figure 35 MBE主腔體示意圖	20
Figure 36 微奈米中心無塵室內的分子束磊晶系統	22
Figure 37 成功大學表面與磊晶實驗室MBE	22
Figure 38 成功大學微奈米中心 wet bench	23
Figure 39 Supra-55	24
Figure 40 旋轉塗佈儀	25
Figure 41 1.5%NaOH, 4%IPA, 0.016%PEG, 80度	28
Figure 42  4% KOH 4%IPA 無PEG 80度	28
Figure 43 矽金字塔基板上的氮化鎵奈米線成長條件流程圖	29
Figure 44 金字塔上成長氮化鎵奈米線，SEM top view, 20KX	30
Figure 45金字塔上成長氮化鎵奈米線，SEM top view, 50KX	30
Figure 46金字塔上成長氮化鎵奈米線，SEM cross section 10KX	31
Figure 47金字塔上成長氮化鎵奈米線，SEM cross scetion, 50KX	31
Figure 48金字塔上成長氮化鎵奈米線，SEM cross section, 標記奈米線長度	32
Figure 49金字塔上成長氮化鎵奈米線，SEM cross section, 標記奈米線直徑	32
Figure 50 在金字塔基板上成長的氮化鎵奈米線的光致螢光光譜	33
Figure 51 氮化鎵奈米線發電器的製備流程	34
Figure 52 PMMA塗佈流程圖	35
Figure 53 PMMA塗佈後的成品	35
Figure 54 銀膠塗佈	36
Figure 55 塗佈銀膠後的SEM圖，5KX	36
Figure 56塗佈銀膠後的SEM圖，10KX	37
Figure 57 黏貼銅膠帶	38
Figure 58 黏貼銅線	38
Figure 59 黏貼絕緣膠帶	38
Figure 60 在銅線兩端製作鱷魚夾容易夾住的電極	39
Figure 61 將樣品黏貼於載玻片上	39
Figure 62 成品	39
Figure 63 Stanford research systems sr560	40
Figure 64 Tectronicx DPO3034	41
Figure 65 接線方式	41
Figure 66 樣品的背面與鋁箔一起接地	42
Figure 67 製作完成的VING奈米發電器	43
Figure 68 VING奈米發電器單下壓放	44
Figure 69 VING 奈米發電器單下壓放，四個部分	45
Figure 70 單下壓放的原理	46
Figure 71 VING發電器連續壓放	47
Figure 72 金字塔發電器SEM cross section	48
Figure 73 金字塔發電器連續壓放	49
Figure 74 VING與金字塔發電器比較	49
                                    

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校內：2020-09-09公開
校外：不公開電子論文尚未授權公開，紙本請查館藏目錄

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