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| 研究生： |
朱家民 Chu, Chia-Ming |
|---|---|
| 論文名稱： |
以原子層沉積技術備製多台地形通道氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體之探討 Investigation of Multi-Mesa Channel AlGaN/GaN MOSHEMTs by Atomic Layer Deposition |
| 指導教授： |
王永和
Wang, Yeong-Her |
| 學位類別： |
碩士 Master |
| 系所名稱： |
電機資訊學院 - 微電子工程研究所 Institute of Microelectronics |
| 論文出版年： | 2018 |
| 畢業學年度： | 106 |
| 語文別： | 英文 |
| 論文頁數： | 80 |
| 中文關鍵詞： | 氮化鋁鎵/氮化鎵 、金氧半高電子遷移率電晶體 、多台地形通道 、原子層沉積 、二氧化鋯 |
| 外文關鍵詞： | AlGaN/GaN, metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT), multi-mesa channel, atomic layer deposition, ZrO2 |
| 相關次數： | 點閱：109 下載：2 |
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本研究中我們備製多台地形通道之氮化鋁鎵/氮化鎵高電子遷移率電晶體，藉由多台地形通道之溝渠結構作為通道之散熱處，有效降低元件之自發熱效應，最大電流密度與最大轉換電導值為585 mA/mm和124 mS/mm。此外，我們以原子層沉積技術沉積高介電常數之二氧化鋯薄膜，製備出金氧半高電子遷移率電晶體，藉以改善蝕刻製程而造成閘極漏電流增加之情形。我們以兩種方式備製金氧半高電子遷移率電晶體，其製程包含前段式製程與後段式製程，其中以後段式製程備製之金氧半高電子遷移率電晶體擁有較低之漏電流、較大之電流開關比與較小之次臨界擺幅。最後，我們分別比較平面式結構與多台地形通道結構之金氧半高電子遷移率電晶體(後段式製程)，相較於平面式結構，多台地形通道金氧半高電子遷移率電晶體顯示出較低之自發熱效應與較佳之閘極控制力。
In this study, multi-mesa channel (MMC) AlGaN/GaN high-electron-mobility transistors (HEMTs) are fabricated. The self-heating effect of MMC HEMTs is suppressed since the trench of the MMC acts as a heat spreader, dissipating heat. The maximum drain current and maximum transconductance are 585 mA/mm and 124 mS/mm, respectively. Atomic layer deposition is utilized to deposit a high-dielectric-constant thin film of ZrO2, which lowers the leakage current caused by the etching process. Two methods are used to fabricate MMC metal-oxide-semiconductor (MOS) HEMTs, namely depositing the oxide layer before the source and drain (S/D) process (FEOL) and depositing the oxide layer after the S/D process (BEOL). Compared with MMC MOSHEMTs (FEOL), MMC MOSHEMTs (BEOL) have a lower gate leakage current, a larger Ion/Ioff ratio, and a smaller subthreshold swing. Finally, the BEOL process is used to fabricate AlGaN/GaN MOSHEMTs based on the MMC structure and the planar structure, respectively. Compared with the planar MOSHEMTs, the ZrO2 MMC MOSHEMTs exhibit less self-heating and better gate controllability.
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