本論文使用電化學沈積的方法在多孔性陽極氧化鋁薄膜內成長出奈米銀粒子陣列。為了確保奈米銀粒子能夠均勻在多孔性薄膜的每個孔洞之內都能成核，在選擇電化學沈積的電壓源時，我們選擇了直流電以及交流電二種電壓源來做電解沈積，結果顯示使用直流電壓源可以提高銀粒子的成核均勻性。
成長出包覆有奈米銀粒子陣列的陽極氧化鋁薄膜後，我們量測此薄膜的吸收頻譜，發現此薄膜在波長405 nm處有一吸收峰值，原因來自於奈米銀粒子的局域性表面電漿共振。之後，我們使用黃光微影製程在此薄膜上製備出電極，以量測光致導電率增強效應。我們架設了一個含有633 nm、532 nm以及405 nm波長雷射的光學系統來進行量測，結果顯示在405 nm波長雷射光照射的情況之下，導電率的增強效應最為明顯。在三道雷射光照射情況下導電率提昇的比例也和吸收頻譜裡的吸收率有正比關係，顯示此導電率增強效應和局域性表面電漿共振有密切的關連。

Dielectric films embedded with two-dimensional (2D) arrays of silver nanoparticles have been fabricated by electrodeposition of Ag into nanopores of anodic aluminum oxide (AAO) films. In this case, the filling ratio of Ag nanoparticles into nanopores of AAO films is a major concern. Alternating current voltage source and Direct current voltage source are used as electrodepositing sources to determine the best filling ratio. Results show that alternating current voltage source has got better filling ratio than direct current voltage source.
The absorption spectrum of Ag nanoparticles embedded in the anodic aluminum oxide film (Ag/AAO) shows that the characteristic plasmon resonance peak is located at 405 nm which is considered to be caused by localized surface plasmon resonance (LSPR) of Ag nanoparticles.
Two metal contacts are fabricated for the conductivity measurements of the Ag/AAO film. The optical system consisting of 633-, 532- and 405-nm lasers is set for the photo-induced conductivity measurement. Conductivity measurements under 405-nm laser illumination have got the highest conductivity compared to the conductivity under other laser illuminations and the dark condition. The ratio of the induced conductivity for 633-, 532- and 405-nm laser illuminations is directly proportional to the ratio of the structural absorption at these three wavelengths, which confirms that the localized plasmon resonance of Ag nanoparticles are closely related to the photo-induced conductivity on the Ag/AAO substrate.

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