研究生: |
邱勝任 Chiu, Sheng-Ren |
---|---|
論文名稱: |
單晶片微機電六軸慣性感測元件與整合電路 Monolithic 6-DoF MEMS Inertial Sensor with Integrated Electronics |
指導教授: |
蘇炎坤
Su, Yan-Kuin |
學位類別: |
博士 Doctor |
系所名稱: |
電機資訊學院 - 微電子工程研究所 Institute of Microelectronics |
論文出版年: | 2014 |
畢業學年度: | 102 |
語文別: | 英文 |
論文頁數: | 108 |
中文關鍵詞: | 微機電慣性感測元件 、加速度計 、角速度計 、體型微矽加工 、三角積分器電路 、轉導放大器 、自動增益控制電路 |
外文關鍵詞: | MEMs inertial measurement unit, accelerometer, gyroscope, bulk micromachining, sigma-delta modulator, trans-impedance amplifier, automatic gain control |
相關次數: | 點閱:104 下載:0 |
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本論文主要研究使用SOG(Silicon On Glass)製程製作之六軸慣性感測元件與標準CMOS製程製作之六軸慣性感測元件讀取電路,以應用於加速度與角速度之量測。本論文分成三大部份。第一部份,利用SOG之體型微矽加工(Bulk Micromachining)以及深離子反應蝕刻(Deep Reactive-ion-etchant, DRIE)技術,在40um厚度的SOI晶元上製作具高深寬比的六軸慣性感測元件,包含三軸一體之加速度計與三軸一體之角速度計,考慮兩元件的最佳化設計將三軸一體之加速度計置於最小轉動慣量位置,角速度計則採用圓周分散式結構設計,使質量塊擁有最大的振盪幅度,提升角速度量測之靈敏度,並抑制環境干擾影響。整個六軸慣性感測元件的尺寸為2.1mmx2.1mm,為使加速度計與角速度計同時運作,本六軸慣性感測元件採用玻璃介質(Glass Frit)接合技術將其密封於2m bar之真空度下,在此真空度下所量得之角速度計振盪器之品質因子為2000。第二部份發表一個全整合的六軸慣性感測元件的讀取與訊號處理電路。在三軸加速度之讀取電路設計採用了三角積分器電路作為類比前端電路,搭配全數位之校正電路可獨立校正加速度計各軸的零點電壓與靈敏度計。在角速度計振盪器的驅動電路上,採用一轉導放大器搭配自動增益控制電路來達成振盪器穩定輸出之目標。在科式加速度計的讀取電路設計上亦採用轉導放大器並搭配數位頻率合成器來取得解調所需之所需相位,本電路採用tsmc 0.25um 1P5M標準製程,晶片尺寸為2.5mm x 2.5mm。第三部份為六軸慣性感測元件與讀取電路測試結果,由測試結果可得加速度計之x/y/z軸之靈敏度與最小它軸靈敏度分別為1.442V/g;0.03%,1.241V/g;0.21%與1.434V/g;0.21%。角速度計之x/y/z軸之靈敏度分別為1.62mV/DPS,1.67mV/DPS與1.67mV/DPS,整體的耗電量在3V的操作電壓下消耗的電流約為2.5mA。
This dissertation investigates a monolithic 6-DoF MEMS inertial sensor fabricated by SOG(Silicon On Glass) process together with a fully integrated readout/control circuit fabricated by standard CMOS process for application into the linear acceleration and angular rate measurement. There are three parts in this dissertation. In the first part, a monolithic 6-DoF MEMS inertial sensor including a tri-axis accelerometer and a tri-axis gyroscope is fabricated by SOG(Silicon On Glass) bulk micromachining process with DRIE (Deep Reactive-ion-etchant).For the optimum design for both size and performance considerations, the tri-axis accelerometer is designed under the minimum angular momentum consideration while the tri-axis gyroscope is designed under the conservation of momentum and distributed and differential for sensing mechanism for robustness. The element size of the monolithic 6-DoF inertial sensor is 2.1mm x 2.1mm, and the structure of the inertial sensor is hermetic sealed with the silicon cavity by glass frit process under 2 m bar condition. The quality factor of the gyroscope resonator is about 2000. The second part gives the detail design consideration of the fully integrated readout/control circuit of the MEMS 6-DoF inertial senor. In the accelerometer readout circuit design, a first-order Sigma-Delta modulator is used as analog front end. A calibration DAC (CALDAC) for sensor gain and offset trimming is also adopted. In the gyroscope system, the designed drive/readout ASIC consists of a driving-loop circuit to drive the resonator into resonance, a trans-impedance amplifier (TIA) to detect the Coriolis signal as well as a gain/offset trimming ADC to adjust this output. The ASIC is fabricated by tsmc 0.25um 1P5M process and th chip size is 2.5 x 2.5 mm2. The third part described the measurement results of the 6-DoF inertial measurement unit. The results show that the sensitivities and cross-axis sensitivities of the x/y/z tri-axis accelerometer are 1.442V/g; 0.03%, 1.241V/g; 0.21% and 1.434V/g; 0.21%, respectively. The sensitivities of the x/y/z tri-axis gyroscope are 1.62mV/DPS, 1.67mV/DPS and 1.67mV/DPS, respectively. The power consumption is about 2.5mA under 3V operation.
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