本論文主要在探討以原子層沈積法沈積高品質氧化鋅薄膜，藉由原子層沈積法的均勻性及高階梯覆蓋性，製作增強型氧化鋅透明薄膜電晶體，並改變不同溫度沈積氧化鋅通道層，和改變氧化鋅含微量鋁金屬之鋁含量，並對不同閘源極電壓下之汲源極電流-汲源極電壓關係、固定汲源極電壓之汲源極電流-閘源極電壓關係、元件照光穩定性進行分析。
在變溫沈積通道層方面，由於以原子層沈積法沈積氧化鋅薄膜，會因為基板溫度變化，對薄膜的濃度、阻值、載子移動率會有影響，而薄膜電晶體則會因為薄膜濃度太大導致沒有電晶體特性。故本論文固定通道層厚度為25 nm，改變沈積溫度分別為75 oC、100 oC、125 oC，其中以100 oC為最佳沈積溫度，場效載子移動率達8.87 cm2/V-s，電流開關比(Ion/Ioff)為106。
探討氧化鋅摻雜不同微量鋁之比例，分別為30(DEZn):1(TMA)、20:1、15:1，其中以20:1的比例為最佳條件，場效載子移動率達73.4 cm2/V-s，電流開關比(Ion/Ioff)為106，而摻雜比例到的15:1時，則因為薄膜濃度過高，元件沒有飽和現象。
探討元件光穩定方面，照光波段為400nm~700nm，在汲源極電流-閘源極電壓關係中，發現隨著照光的波長越短，關閉電流隨著變大，開關電流也受到光電效應所引發的光電流而有微量的提升。

This research is to investigate the highly transparent ZnO thin film used by Atomic Layer Deposition (ALD). Because of large area uniformity and high step coverage in fabricating enhancement-mode thin film transistors with the ZnO films. This research changed the different temperature to deposited ZnO films as the active channel layers and changed the different amount of Al slightly doped into ZnO films by ALD, To analyze the IDS-VDS and IDS-VGS curves, it would illuminate with different wavelengths for optical stability.
For aspect of varying-temperature deposition to channel layer, carrier concentration, resistivity and mobility would be affected due to varying temperature of subtract in ALD deposition process of ZnO, so that TFTs would lose properties of transistor. This research fixed the thickness of channel layer as 25nm, varied the deposition temperature as 75℃, 100℃, 125℃, the best deposition temperature is 100℃ among these temperature. At temperature of 100℃, mobility reached to 8.87 cm2/V-s, current on and off ratio(Ion/Ioff) reached to 106.
Researching in the ratio of Al doped into ZnO, there were few different ratio tested in experiment such as 30(DEZn):1(TMA), 20:1 and 15:1. The best condition among these ratio is 20:1, mobility reached to 73.4 cm2/V-s, current on and off ratio(Ion/Ioff) reached to 106. As to doping ratio of 15:1, the carrier concentration is too high to represent the saturation situation.
The optical stability in this device, illuminated from 400 nm to 700 nm in wavelengths. To analysis the IDS-VGS curves, follow the decreasing of illuminating wavelengths, off current will enhance because of induced optical current by Photoelectric effect.

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