隨著電子元件尺寸縮減與功率密度增加，準確掌握薄膜熱傳行為對於熱管理與元件可靠性愈發重要，然而現有多數量測方法在成本、破壞性或解析度方面均有所侷限。本研究針對薄膜熱傳導係數之量測技術進行探討，並集中於溫度波分析法於熱性質測量上的應用與驗證。
本研究首先整理與分析常見之熱傳導係數量測技術，分為穩態法以及瞬態法，並比較其優缺點與適用範圍。接著以溫度波分析法為核心，建立具參考價值的頻率選擇公式，針對不同厚度的二氧化矽薄膜進行實驗，探討其厚度、沉積製程與溫度變化對熱傳導係數的影響。結果顯示，熱傳導係數隨薄膜厚度增加而提升，符合彈道傳輸與尺寸效應的理論模型；不同方法鍍製的薄膜熱傳導係數也會有所差距；並且在變溫的情況下，薄膜的熱傳導係數也將隨著溫度提高而增加。
此外，本研究亦整理與比較不同矽化合物薄膜之熱傳導數據，並探討多層堆疊結構(SiO₂/Al₂O₃)對熱傳性質的影響，證實多層堆疊結構可有效降低聲子傳遞效率，使熱導率顯著下降。

Thermal management has become a crucial factor in maintaining device reliability with the continuous miniaturization and power density increase of electronic devices. Thin-film thermal conductivity differs significantly from bulk materials due to phonon-boundary scattering and size effects, which must be accurately characterized for next-generation microelectronic and optoelectronic devices.
This study established a thermal conductivity measurement system for silicon compound thin films based on the Temperature Wave Analysis Method (TWA). Thin films of silicon dioxide (SiO₂), silicon nitride (Si₃N₄), and silicon carbide (SiC), with thicknesses ranging from 45 nm to 600 nm, were investigated. A frequency selection criterion was proposed to optimize the accuracy of the measurement. Results show that thinner films exhibit lower thermal conductivity due to enhanced phonon scattering, and the thermal conductivity of SiO₂ thin films increases with temperature between 280 K and 360 K. Additionally, multilayer SiO₂/Al₂O₃ structures demonstrates a thermal conductivity reduction of up to 75.13 % compared with single-layer alumina, highlighting the potential of interface engineering in thermal management applications.

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