摘 要

本研究之目的在於製造一種應用於水下環境之聲響感測器，在製程中採用SOI晶片做為基材，其目的可省去沉積薄膜的過程，降低沉積所帶來製程上的瑕疵。SOI晶片在結構尺寸上可因不同需求做調整，較符合在水下環境使用聲響感測器需克服靜水壓對於感測器施壓產生的變形之限制。以SOI晶片為材料配合微機電製程裡的面型加工(surface micromachining) 後形成的薄膜結構，在薄膜的感測面鋪上適當的壓阻材料，利用結構本身具有自然振頻之特性，在接受特定頻率聲波時，結構會在此特定頻率中產生較高的訊雜比，利用這樣的特性作為感測器的在水中的作用原理。本實驗藉由三道光罩微影製程配合沉積、蝕刻、蒸鍍及封裝到最後的測試，製作出一適合水下環境使用之感測器，最後並經由各式聲學實驗設備探討聲響感測器之特性以作為實用時之參考。

Abstract

The purpose of this study is to fabricate a strain-gage type acoustic sensor for underwater environment. We utilize the structure layer of SOI wafer as the sensing membrane to ease the fabrication process. By selecting various Si layer and oxide layer thickness, the acoustic sensor can be tested at various depth of water without touching the substrate material, which is crucial for the sensing element. At resonant frequent of the membrane structure, a high signal-to-noise ratio (SNR) is expected.

The test of the acoustic sensor was carried out in the air and underwater environment, and it was unsuccess we will discuss several possible reason for this, and propase future work for continuing the present study.

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