首先，我們以惰性電極鉑同時作為上下電極，在惰性電極作為電極的情況下，調控出氧化鋁鎵與氧化銦鎵共濺鍍時最適合的功率比率，並以該比例繼續做後續的研究。接著我們探討在上電極為鉑、銀、銅、鎳，鉑作為下電極的情況下，氧化鋁銦鎵記憶體的製備方式及其電特性。實驗結果顯示這些樣品在直流操作下，有著雙極性的特性，其中，以銀為上電極的電阻式記憶體具有最高的 868 次高低組態轉換次數，以及高達 104的開關比。
再來，以銀作為上電極，鉑作為下電極，藉由改變氧化鋁銦鎵電阻轉換層的厚度，欲研究不同電阻轉換層的厚度對電阻式記憶體特性之影響。結果顯示，元件皆為雙極性之電阻轉換操作，而樣品的電阻轉換層的厚度對高低阻態轉換次數影響不大，但在轉換層厚度為20-nm時，元件有 cycle 間最小的高阻態變動。另外這些元件在室溫、0.1伏特讀取電壓下，皆有保持高低阻態各104秒的穩定記憶能力。
接著，以銀為上電極，鉑作為下電極，探討改變濺鍍電阻轉換層時，不同通氧量比（O/O+Ar），對元件之影響。結果顯示，結果顯示元件皆為雙極性之電阻轉換操作，隨著濺鍍中通氧比例的增加，使得高低阻態轉換的次數隨之增加，且在通氧比超過10%以後，對元件特性較無影響。4% 10%, 20% 通氧比之樣品的高低阻態轉換次數均超過 1000 次，且具有在室溫、0.1 伏特的讀取電壓下，保持高低阻態各 104秒的穩定記憶能力，其中4%通氧比的元件有最好的電阻分布(resistance)。
最後，以銀為上電極，鉑作為下電極，電阻轉換層厚度為20-nm，通氧比4%之樣品，探討量測條件的改變對元件之影響。實驗結果顯示，對元件添加限流，對元件特性會有相對應之影響。

In this study, AlInGaO was prepared using RF magnetron co-sputtering as the resistive switching layer for non-volatile resistive random access memory (RRAM). Different processing adjustments were made to fabricate AlInGaO RRAM samples with varying qualities, and the characteristics of these different samples were investigated.
First, we used platinum as both the top and bottom inert electrodes. Under these conditions, we optimized the power ratio for co-sputtering AlInGaO and InGaO. This optimal ratio was then used for subsequent research. We then explored the preparation methods and electrical characteristics of AlInGaO RRAM with platinum, silver, copper, and nickel as the top electrode, and platinum as the bottom electrode. The experimental results indicated that these samples exhibited bipolar characteristics under DC operation. Among them, the RRAM with a silver top electrode demonstrated the highest number of 868 high-low state transitions and a high on/off ratio of 104.
Next, with silver as the top electrode and platinum as the bottom electrode, we investigated the effect of different thicknesses of the AlInGaO resistive switching layer on RRAM characteristics. The results showed that the devices all operated in bipolar resistive switching mode. While the thickness of the switching layer had minimal impact on the number of high-low state transitions, a 20-nm thick switching layer exhibited the smallest high-state fluctuation between cycles. Additionally, these devices maintained stable memory capability for 104 seconds for both high and low resistance states at room temperature under a 0.1V read voltage.
Furthermore, with silver as the top electrode and platinum as the bottom electrode, we examined the effects of different oxygen flow ratios on the device properties during the sputtering of the resistive switching layer. The results showed that the devices all operated in bipolar resistive switching mode. An increase in the oxygen flow ratio during sputtering led to an increase in the number of high-low state transitions. However, beyond a 10% oxygen flow ratio, the device characteristics were minimally affected. Samples with 4%, 10%, and 20% oxygen flow ratios all exhibited more than 1000 high-low state transitions and maintained stable memory capability for 104 seconds at room temperature under a 0.1V read voltage. The device with a 4% oxygen flow ratio demonstrated the best resistance distribution.
Finally, with silver as the top electrode, platinum as the bottom electrode, a 20-nm thick switching layer, and a 4% oxygen flow ratio, we investigated the impact of varying measurement conditions on device characteristics. The experimental results indicated that adding a compliance current had corresponding effects on the device characteristics.

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