本論文中我們以有機金屬氣相沉積法在砷化鎵基板上成長砷銻化鎵以及砷化銦鎵量子井結構垂直式PIN 光檢測器以及結合共振腔結構之光檢測器。在傳統之PIN量子井結構光檢測器中我們使用了砷銻化鎵/砷化鎵量子井作為吸光層，其中銻之含量為0.23、0,25、0.29，其光激螢光頻譜之波長分別為1123nm、1183nm、1204nm，與元件未加偏壓之吸收頻譜較為接近；在逆偏操作下，元件之吸光波長有著極大之藍移量，在逆偏兩伏之操作下，其波長為1100nm、1098、1133，響應度為4.67mA/W、3.85mA/W、3.36mA/W，其中在銻含量為0.29之元件，從無逆偏到逆偏五伏之操作下，其藍移量可達超過100nm。接著為了更進一步增加PIN光檢測器之吸收效率，我們嘗試成長含共振腔結構之光檢測器，同時搭配Matlab軟體之模擬輔助磊晶參數之調整，在吸收層部分我們使用了砷化銦鎵/砷化鎵量子井結構，其吸收波長約在1.2μm及1.064μm，其中我們在下層之布拉格反射鏡對數為20對，其反射率可達95%以上，在上層之對數部份，我們探討了不同對數之影響，其中在1.2μm之元件部份，我們發現上層布拉格反射鏡對數為6對時，在逆偏18伏操作下有26.07%之量子效率；而在1.064μm之元件部分，上層布拉格反射鏡對數為3對時，在逆偏0.2伏操作下有33.40%之量子效率。

In this thesis, the GaAsSb and InGaAs PIN photodetectors and the resonant cavity enhanced (RCE) PIN photodetectors were grown on GaAs substrates by metal-organic vapor phase epitaxy (MOVPE).
In the conventional PIN photodetectors, we use the GaAsSb/GaAs quantum wells as the absorption region, and the antimony composition is 0.23, 0.25, 0.29 respectively; from the PL spectrum, the wavelength were 1123nm, 1183nm and 1204nm, the value were close to the absorption spectrum of the unbiased devices; otherwise the large amounts of blueshift in the absorption spectrum of the biased devices, the absorption wavelength were 1100, 1098 and 1133 nm and the corresponding responsivity were 4.67, 3.85 and 3.36 mA/W under 2 reverse bias voltage. Specially, the amount of the blueshift was over 100nm from 0V to -5V. To further increase the quantum efficiency of the PIN structure, we try to grow the RCE PDs, meanwhile, we use the Matlab simulation software to modulate the growth condition; accordingly, the absorption region in the following section we use the InGaAs/GaAs type I QWs and theabsorption region were 1200 nm and 1064 nm respectively. The reflectance of the twenty pair bottom DBR layer was high enough to achieve more than 95%.
To investigate the influence of the DBR layers we find out with 20 and 6 bottom and top DBR, the quantum efficiency achieve 28% at near 1.2μm under -18V; with 20 and 3 bottom and top DBR, it achieved 35% at near 1064 nm under -0.4 V

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