本論文研究的第一部份是藉由4,4’-hexafluoroisopropylidene diphthalic dianhydride 、3,3’-diaminodiphenylsulfone 和9,9’-bis(4-aminophenyl) fluorine合成一系列耐高溫、可撓曲透明之含fluorene聚亞醯胺。其玻璃轉移溫度為285~365 ℃。以sol-gel方式將ITO旋轉塗佈於此聚亞醯胺上，所得到的透明ITO/聚亞醯胺其電阻率為10-3 Ω-cm，在可見光範圍穿透度達75 %。
本論文研究的第二部份是製備高反射、高導電聚亞醯胺奈米複合材料。方法是將有機金屬銀化合物、表面改質奈米銀片混摻至含氟聚亞醯胺基材中。導電聚亞醯胺複合材其導電度可經由聚亞醯胺環化過程中獲得，因為有機金屬銀化合物能於150 ℃下裂解成導電銀奈米粒子以連接奈米銀片形成導電通路。
本論文研究的第三部份是製備高導熱聚亞醯胺奈米複合材。將不同顆粒大小之氮化硼(BN)混摻至聚亞醯胺基材中，利用 3-Mercaptopropionic acid (MPA)改質BN表面。高導熱聚亞醯胺奈米複合材其熱傳導係數隨著不同比例之BN顆粒大小而改變。聚亞醯胺奈米複合材在BN含量30 wt%時，其熱傳導係數達到1.16 W/m-K。
本論文研究的第四部份是由奈米銀片與負型感光聚亞醯胺(PSPI)混摻，製備導電光阻複合材料。利用2-Mercaptopropionic acid (MPA) 改質奈米銀片表面。此感光性導電聚亞醯胺奈米複合材在銀含量 10 wt%開始具有導電度。 隨著導電聚亞醯胺奈米複合材中銀含量的改變，其導電度範圍為10~104 S/cm。
本論文研究的第五部份是由奈米氮化硼與負型感光聚亞醯胺混摻，製備導熱感光聚亞醯胺/BN複合材料。利用3-Mercaptopropionic acid (MPA) 改質奈米氮化硼表面。此感光性聚亞醯胺奈米複合材的熱導度隨著氮化硼含量增加而上升，在氮化硼添加量為30 wt%時，其熱傳導係數為0.47 W/m-K。

First, a high temperature, flexible and colorless indium-tin-oxide (ITO) coated plastic substrates have been synthesized from 3,3’-diaminodiphenylsulfone (DDS), 9,9’-bis(4-aminophenyl) fluorene (BAPF) and 4,4’-(hexafluoroisopropylidene) diphthalic anhydride (6FDA) monomers. Their Tgs were around 285~365 ℃. The conductive ITO was synthesized by sol-gel method, and then deposited onto the copolyimide films by a spin coating process. The resistivity of the ITO film was 10-3 Ω-cm, and its
transmittance was 75 % at the visible light region.
Second, highly reflective and electrical conductive polyimide films have been developed by incorporation of surface modified silver flakes and a metallo-organic compound, silver 2-ethylhexanoate, into a polyimide matrix. The surface conductivity can be obtained during the imidization process of polyimide, because the metallo-organic compound can decompose into silver atoms at a low temperature of 150 ℃.
Third, a thermal conductive polyimide composite film has been developed. It is based on a dispersion of different particle sizes of boron nitride (BN) in a polyimide (PI) precursor. 3-Mercaptopropionic acid (MPA) was used as the surfactant to modify the boron nitride (BN) surface for the dispersion of boron nitride (BN) in the polymer. The PI/BN composites showed thermal conductivity at different proportion of BN particle sizes and contents. The thermal conductivities of the PI/BN composite was up to 1.16 W/m-K, which was a mixture contained 30 wt% of micro and nano-sized BN fillers in the polyimide matrix.
Fourth, an electrically conductive photoresist has been developed. It is based on a dispersion of silver nanoflakes in a negative-tone photosensitive polyimide (PSPI) precursor. 2-Mercaptopropionic acid (MPA) was used as the surfactant to modify the silver nanoflake surface for the dispersion of silver nanoflakes in the polymer. The silver/PSPI nanocomposites showed electrical conductivity at a low silver content of 10 wt%. The electrical conductivity of the PSPI/silver nanocomposites ranged from 10 to 104 S/cm, which was dependent on the silver weight fraction in the resist formulation.
Fifth, a thermally conductive photoresist has been developed. It is based on a dispersion of BN nanoflakes in a negative-tone photosensitive polyimide (PSPI) precursor. 3-Mercaptopropionic acid (MPA) was used as the surfactant to modify the BN nanoflake surface for the dispersion of BN nanoflakes in the polymer. The PSPI/BN nanocomposites showed different thermal conductivities at different content of BN nanoflakes. The thermal conductivity of the PSPI/BN nanocomposite was up to 0.47 W/m-K, for a mixture containing 30 wt% of nano-sized BN fillers in the polyimide matrix.

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