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研究生: 林睿騰
Lin, Ruei-Teng
論文名稱: 應用無電電鍍和電鍍技術於高功率發光二極體之新式封裝方法
Novel Package of High Power LEDs Applied by Electroless- and Electro- plating Technology
指導教授: 蘇炎坤
Su, Yan-Kuin
學位類別: 碩士
Master
系所名稱: 理學院 - 光電科學與工程研究所
Institute of Electro-Optical Science and Engineering
論文出版年: 2007
畢業學年度: 95
語文別: 英文
論文頁數: 85
中文關鍵詞: 熱阻封裝電鍍銅無電電鍍熱管理發光二極體
外文關鍵詞: Junction Temperature, Package, Management, Electroless, Electroplating Copper
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  • 隨著固態照明演進至此,以發光二極體 (LEDs) 取代傳統白熾燈泡的瓶頸主要仍在亮度的提升和有效的散熱管理等方面。本論文中以我們研究團隊所研發出的新型封裝技術,搭配無電電鍍和電鍍銅技術,製成不需膠體而可直接和發光二極體接合的金屬散熱基座,此舉除了大大降低元件的串聯熱阻,延長元件壽命之外,也進而使元件的操作電流往上提升。
    相較於傳統的電子槍蒸鍍模式,無電電鍍具有快速、省錢等優勢。是故引進無電電鍍技術的用意,在於改善製程、降低成本等。由實驗的結果顯示,使用無電電鍍新式封裝技術的LEDs,三種色光元件操作電流皆有所提升,而亮度也隨著操作電流提升而跟著增加。且因為有效的熱排除使得晶片表面溫度大幅降低,串連熱阻減少而增加元件的壽命。
    關於新式封裝和傳統模式的元件光電特性,我們將在後面的論文中做詳細的探討比較。

    With the development of solid-state lighting, the chief bottlenecks of traditional incandescent lamps replaced with light emitting diodes (LEDs) were luminance enhancements and effective heat dissipation management. In this paper, our group presents a novel package with electroless and electroplating copper technology. By this method, the LEDs chip can be connected with metal heat sink directly without any resin. It not only reduces the series thermal resistances greatly but also extends the device lifetime. Moreover, the operation current also increased.
    To compare with traditional e-gun evaporated one, it has predominance that the advantages of electroless plating technology are simple process and cost down, etc. The experiment result shows that the operation current of novel package LED device prepared by electroless plating acts higher and the junction temperature decreased obviously because of the effective heat dissipation. Besides, the device lifetime became longer on account of the lower total series thermal resistance.
    The comparisons of electro- and optical characteristics between novel package and traditional ones were discussed later.

    Contents Abstract (In Chinese) ----------------------------------- I Abstract (In English) ---------------------------------- II Acknowledge (In Chinese) ------------------------------- IV Contents ------------------------------------------------ V Table Captions --------------------------------------- VIII Figure Captions ---------------------------------------- IX Chapter 1 Introduction ---------------------------------- 1 1-1 Development of Solid-State Lighting ----------------- 1 1-1-1 History of Solid-State Lighting ------------------- 1 1-1-2 Progress of Light-Emitting Diode ------------------ 3 1-2 Background of this Research and Motivation ---------- 4 1-3 Research Direction and Skeleton --------------------- 6 Chapter 2 Brief Principles of Light-emitting Diodes ---- 12 2-1 Introduction of LEDs -------------------------- 12 2-2 White-light LEDs Generation ------------------- 14 2-3 Principle of Package -------------------------- 17 2-4 Thermal Resistance and Junction Temperature -------- 21 2-4-1 Basic of Thermal Resistance Coefficient ------- 21 2-4-2 Temperature Induced Effect on LEDs ------------ 22 2-5 Electroless Plating Technology --------------------- 24 2-5-1 Introduction ------------------------------------- 24 2-5-2 Mechanism ---------------------------------------- 25 2-6 Electroplating Technology -------------------------- 29 2-6-1 Introduction ------------------------------------- 29 2-6-2 Mechanism ---------------------------------------- 30 2-6-3 Electroplating Apparatus ------------------------- 30 Chapter 3 Package of Electro-Optical Device ------------ 37 3-1 Conventional Package of LEDs ----------------------- 37 3-2 Process of Conventional Package -------------------- 38 3-3 Novel Package of LEDs ------------------------------ 39 3-3-1 Module fabrication ---------------------------- 39 3-3-2 Nickel Electroless Plating -------------------- 39 3-3-3 Copper Electroplating ------------------------- 40 Chapter 4 Result and Discussion ------------------------ 42 4-1 Electroless Nickel Thin Film Research -------------- 42 4-1-1 Material Quality --------------------------------- 42 4-1-2 Component Elements Analysis ---------------------- 43 4-2 Summary -------------------------------------------- 44 4-3 Novel Package of Different Color LEDs Device ------- 45 4-3-1 Red LEDs Novel Package --------------------------- 45 4-3-1-1 Electrical Characteristic ---------------------- 45 4-3-1-2 Optical Characteristic ------------------------- 45 4-3-1-3 Junction Temperature Measurement --------------- 46 4-3-2 Green LEDs Novel Package ------------------------- 46 4-3-2-1 Electrical Characteristic ---------------------- 46 4-3-2-2 Optical Characteristic ------------------------- 46 4-3-2-3 Junction Temperature Measurement --------------- 47 4-3-3 Blue LEDs Novel Package -------------------------- 47 4-3-3-1 Electrical Characteristic ---------------------- 47 4-3-3-2 Optical Characteristic ------------------------- 48 4-3-3-3 Junction Temperature Measurement --------------- 48 4-4 Summary -------------------------------------------- 50 Chapter 5 Conclusion and Future Work ------------------- 79 5-1 Conclusion ----------------------------------------- 79 5-2 Future work ---------------------------------------- 80 Reference ---------------------------------------------- 81

    Reference
    [01] A Bergh, M. G. Craford, A. Duggal, and R. Haitz,“The
    promise and challenge of solid-state lighting,”
    Physics Today 54 (2001) 42-47
    [02] G. B. Stringfellow and M. G. Craford, “High
    Bightness Light Emitting Diodes” (Academic Press,
    San Diego, 1997)
    [03] H. J. Round, “A Note on Carborundum,” Electrical
    World 49, 309,(1907)
    [04] H. P. Maruska and J. J. Tietjen, “The preparation
    and properties of vapor-deposited single-crystal-line
    GaN,” Appl. Phys. Lett., 15, 327, (1969)
    [05] Hiroshi Amano, Masahiro Kito, Kazumasa Hiramatsu and
    Isamu Akasaki, “P-type Conduction in Mg-Doped GaN
    Treated with Low-energy Electron Beam Irradiation
    (LEEBI),” Jpn. J. Appl. Phys. Part2, 28, L2112-
    L2114 (1989)
    [06] Shuji Nakamura, Senoh M. and Mukia T.,“P-GaN/n-
    InGaN/GaN Double-heterostructure Blue-light-emitting
    Diodes,” Jpn. J. Appl. Phys. 32, L8 (1993)
    [07] Arik, M., Weaver, S., “Chip scale thermal management
    of high brightness LED packages,” Fourth ternational
    Conference on Solid State Lighting, 214-223, (2004)
    [08] Sano, S., Murata, H. and Hattori, K., “Development
    of flat panel LED module with heat sink,” Mitsubishi
    Cable Ind. Rev., Vol 86, 112-118, (1993, in Japanese)
    [09] Petroski, J., Understanding longitudinal fin heat
    sink orientation sensitivity for Light Emitting Diode
    (LED) lighting applications, International Electronic
    Packaging Technical Conference and Exhibition, 111-
    117, (2003)
    [10] Chen, J.H., Liu, C.K., Chao, Y.L., Tain and R.M.,
    “Cooling performance of silicon-based thermoelectric
    device on high power LED,” 24th International
    Conference on thermoelectrics, 53-56, (2005)
    [11] Hsu, C.C., Wang, S.J., Liu and C.Y., “Metallic wafer
    and chip bonding for LED packaging,” The 5th Pacific
    Rim Conference on Lasers and Electro-Optics, Vol. 1,
    26, (2003)
    [12] Zhang, K., Xiao, G.W., Wong, C.K.Y., Gu, et al.,
    “Study of Thermal Interface Material with Carbon
    Nanotubes and Carbon Black in High-Brightness LED
    Packaging with Flip-Chip,” Proceedings of Electronic
    Components and Technology, 60-65, (2005)
    [13] Acikalin, T., Garimella, S.V., Petroski, J. and
    Arvind Raman,“Optimal design of miniature
    piezoelectric fans for cooling light emitting
    diodes,” The Ninth Intersociety Conference on
    Thermal and Thermomechanical Phenomena in Electronic
    Systems, 663-671, (2004)
    [14] http://acept.la.asu.edu/courses/phs110/expmts/
    exp13a.html
    [15] E. Fred Schubert, “Light Emitting Diodes and Solid-
    state Lighting,”HANDBOOK
    [16] http://www.ecse.rpi.edu/~schubert/Light-Emitting-
    Diodes-dot-org/
    [17] Jeff Y. Tsao, “Light Emitting Diodes (LEDs) for
    General Illumination,” OIDA_SSL_LED_Roadmap, (2002)
    [18] Thomas Justel, Hans Nikol and Cees Ronda, U.S. Philips
    Corporation, “White light emitting diode,” Patent
    Number US 6084250 (Jul 4, 2000)
    [19] M. Koike, N. Shibata, H. Kato and Y. Takahashi,
    “Development of High Efficiency GaN-Based
    MultiquantumWell Light-Emitting Diodes and Their
    Applications,” IEEE Journal of Selected Topics in
    Quantum Electronics 8, 271-277, (2002)
    [20] Christopher H. Lowery, Gerd O. Mueller and Regina B.
    Mueller Mach, Lumileds Lighting U.S., LLC, “Phosphor
    and White Light LED Lamp Using the Phosphor,” Patent
    Number EP1145282A2 (Oct 17, 2001)
    [21] Tetsushi Tamura, Hideo Nagai, Masanori Shimizu, Yoko
    Shimomura and Nobuyuki Matsui, Matsushita Electric
    Industrial Co., Ltd., "LED Lamp," Patent Number
    EP1160883A2 (Dec 5, 2001)
    [22] Georg Bogner, AlexandraDebray and Dr. Klaus Horn,
    “High Performance Epoxy Casting Resin for SMD-LED
    Packaging,” Proceedings of SPIE - The International
    Society for Optical Engineering, v 3938, p 249-261,
    (2000)
    [23] C. A. May, in Epoxy Resins Chemistry and Technology,
    2' Edition, Marcel Dekker, Inc., New York, Base,
    (1988)
    [24] J. S. Vrentas, C. M. Vrentas, J. Appl. Polym. Sci.,
    7, (1999) 1431
    [25] M. R. Vanlandingham, R. F. Eduijee, J. W. Gillespie
    Jr., J. Appl. Polym. Sci., 71, p787, (1999)
    [26] J. E. Gunn, R. E. Camenga, S. K. Malik, Rapid
    Assessment of the Humidity Dependence of IC Failure
    Modes, Proc. Ret. Physics, (1983)
    [27] D. J. Belton, M. J. Molter, E. A. Sullivan, Coat.
    Appl. Polym. Sci. Proc. , 629, (1988)
    [28] M. T. Aronhime, X. Peng, and J. K. Giliham, J. Appi.
    Polym. Sci., 3589, (1986)
    [29] J. B. Enns, and J. K. Gillham, J. App!. Polym. Sci.,
    2831, (1983)
    [30] B. H. Eckstein, Org. Coat. Plast. Chem., , (1978) 503
    [31] Kelvin Shih, “LED Junction Temperature Test Unit-
    Operating Manual” Acorn Technology (2003)
    [32] Agilent Technologies, Application Note 1005 (1999)
    [33] A. Brenner and G. Riddell, J. Res. Natl. Bur. Stand.,
    37, 31 (1946)
    [34] G. O. Mallory and J. B. Hajdu, Electroless Plating:
    Fundamentals and Applications, American
    Electroplaters and Surface Finishers Society,
    Orlando, FL (1990)
    [35] L. M. Abrantes and J. P. Correia, J. Electrochem.
    Soc., 141, 2356 (1994)
    [36] C. Madore, M. Matlosz, and D. Landolt, J.
    Electrochem. Soc., 143, 3927 (1996)
    [37] C. Baldwin and T. Such, Trans. Inst. Met. Fin., 46,
    73 (1968)
    [38] G. Gutzeit, Plating, 46, 1158 (1959); G. Gutzeit,
    Plating, 47, 63 (1960)
    [39] J. O’M. Bockris and A. K. N. Reddy, Modern
    Electrochemistry, Plenum Publishing Corporation, New
    York (1977)
    [40] M. Fleischmann, F. Laserre, J. Robinson, and D. Swan,
    J. Electroanal. Chem., 177, 97 (1984)
    [41] D. Edelstein et al., “Full Copper Wiring in a Sub-
    0.25 Mu CMOS ULSI Technology,” Proc. IEEE IEDM, pp.
    773-776, (1997)
    [42] S. P. Murarka, Mater. Sci. Engin. R19, 87 (1997)
    [43] J. J. Kelly and A. C. West, J. Electrochem. Soc. 145,
    3472 (1998)
    [44] J. J. Kelly and A. C. West, J. Electrochem. Soc. 145,
    3477 (1998)
    [45] J. M. Shieh, S. C. Chang, B. T. Dai and M. S. Feng,
    Jpn. J. Appl. Phys. 41, 6347 (2002)
    [46] K. H. Dietz, Circuitree, Feb., 22 (2000)
    [47] T. P. Moffat, J. E. Bonevich, W. H. Huber, A.
    Stanishevsky, D. R. Kelly, G. R. Stafford and D.
    Josell, J. Electrochem. Soc. 147, 4524 (2000)
    [48] D. Josell, D. Wheeler, W. H. Huber and T. P. Moffat,
    Phys. Rev. Lett. 87, 016102-1 (2001)
    [49] T. P. Moffat, B. Baker, D. Wheeler and D. Josell,
    Electrochem. Solid-State Lett. 6, C59 (2003)
    [50] M. Tan and J. N. Harb, J. Electrochem. Soc. 150, C420
    (2003)
    [51] A. Frank and A. J. Bard, J. Electrochem. Soc. 150,
    C244 (2003)
    [52] F. C. Walsh, Trans. Inst. Metal Finish. 70, 50 (1992)
    [53] F. C. Walsh, Trans. Inst. Metal Finish. 70, 95 (1992)
    [54] G. D. Wilcox and D. R. Gabe, Trans. Inst. Metal
    Finish. 70, 100 (1992)
    [55] K. M. Takahashi and M. E. Gross, J. Electrochem. Soc.
    146, 4499 (1999)
    [56] R. R. Tummala, “Fundamentals of Microsystems
    Packaging,”McGraw-Hill, New York (2001)
    [57] G. Gutzeit, Plating, 46, 1158 (1959); G. Gutzeit,
    Plating, 47, 63 (1960)
    [58] J. O’M. Bockris and A. K. N. Reddy, Modern
    Electrochemistry, Plenum Publishing Corporation, New
    York (1977)
    [59] M. Fleischmann, F. Laserre, J. Robinson, and D. Swan,
    J. Electroanal. Chem., 177 ,97 (1984)
    [60] Jeff. Y. Tsao, “Light Emitting Diodes (LEDs) for
    General Illumination,” An OIDA Technology Roadmap
    Update 2002 (2002)
    [61] E. Fred Schubert, “Light-emitting diode,” (2003)

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