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研究生： 鄭士豪
Cheng, Shih-hao
論文名稱： 微波法製備CdS 和CdSe 量子點及電噴霧法製 備P-N Type 發光膜之研究
Preparation of CdS and CdSe Quantum Dots by Microwave Heating Method and P-N Type Luminescence Thin Films by Electrospraying Method
指導教授： 陳進成
Chen, Chin-Cheng
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年： 2006
畢業學年度： 94
語文別： 中文
論文頁數： 150
中文關鍵詞： 量子點 、CdS 、微波法
外文關鍵詞： quantum dots, CdS, microwave method
相關次數： 點閱：150  下載：2 
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    • 目前的照明設備，多數會產生熱及污染等的問題，因此開發具有無水銀污染、發光效率高等優點之半導體發光二極體為必然趨勢。本研究構想製作量子點型的發光二極體，利用量子點本身高效能的發光，藉由量子侷限效應在可見光譜的發光波長內調控發光顏色。
    本論文首先以化學溶膠法配合微波加熱法，利用N,N -二甲基甲醯胺作為反應溶劑，製備p(CdSe)-n(CdS)型之量子點，另外探討改變前驅物組成、掺雜銅對CdS量子點光譜、粒徑、晶相、型態之影響。接著利用電噴霧系統輔以電場收集器找出最佳薄膜收集的條件，利用電噴霧法噴出含有p及n型微粒的帶電液滴，經高溫爐將液體蒸發，微粒根據電移率的不同由電場收集器收集在矽基板上，在特定電壓下收集特定大小的微粒製成薄膜，並對薄膜做光譜、p-n型態、組成、晶相、表面形態和UV燈光照射產生螢光等分析。
    以微波加熱能簡便的製備出高發光亮度且具有量子侷限效應之p(CdSe)-n(CdS)微粒，且成功的改變硫化鎘前驅物元素組成及掺雜銅製備出p型的硫化鎘。利用最佳薄膜製備收集條件配合電場收集器製作緻密且均勻之p及n型薄膜，藉由薄膜粒徑的改變及不同材料發光波長位置不同，利用UV燈光照射產生不同顏色之螢光。

    Light-emitting diodes (LEDs) have the advantages of no mercury pollution and high emission efficiency. Developments of LEDs not only serve to improve the disadvantages of traditional illuminants but also save the energy and protect the environment of the world. This research is speculation manufacture QD LED. Make use the high performance luminescence and limit the quantum confinement effect to control the luminescence color of QD
    In this study, n-CdS/p-CdSe QDs are synthesized by sol-gel method assisted with microwave heating. The influences of microwave heating time, using the solution with the different molar ratio S/Cd and Cu-doped on the size of CdS QD were investigated.
    The QD thin films were fabricated using an electrospray assisted an electrostatic collector from QD/ethanol solution. Particles were collected at a specific location for a specific voltage according to their mobility. The size distribution of QD were analyzed by SMPS (Scanning Mobility Particle Sizer) and TEM. The nanostructure and crystallization of the thin film were analyzed by means of XRD and SEM. In addition, the optical and electric properties were measured by PL and CL. The UV fluorescent was observed emitted lights of QD films.

    中文摘要……………………………………………………………………Ⅰ 英文摘要……………………………………………………………………Ⅱ 總目錄………………………………………………………………………Ⅲ 圖目錄………………………………………………………………………Ⅸ 表目錄……………………………………………………………………ⅩⅤ 符號說明………………………………………………………………ⅩⅤⅠ 第一章 緒論 ………………………………………………………………1 1-1 發光二極體之發展 ……………………………………………………..1 1-2 文獻回顧 5 1-2-1半導體發光材料 5 1-2-2Ⅱ-Ⅵ族半導體發光材料 6 1-2-3硫化鎘奈米微粒之研究 12 1-2-4硒化鎘奈米微粒之研究 15 1-2-5發光二極體薄膜之製備 18 1-3 研究動機 ……………………………………………………………..22 第二章 背景理論 ………………………………………………………...24 2-1 半導體物理基礎 ……………………………………………………24 2-1-1 半導體之特性 24 2-1-2 量子點的特性 28 2-1-3 半導體量子侷限效應理論 31 2-2 微波法 …………………………………………………………………35 2-3 電噴霧法 ……………………………………………………………..38 2-3-1 電噴霧原理 39 2-3-2 參數對電噴霧的影響 43 2-4 電移率與電場收集器 ……………………………………………….47 2-5 發光二極體原理 ……………………………………………………49 2-5-1 P-N Junction 49 第三章 實驗 ……………………………………………………………..51 3-1 實驗流程 ……………………………………………………………..51 3-2實驗藥品與儀器 ……………………………………………………54 3-3實驗步驟 ……………………………………………………………..55 3-3-1量子點微粒之製備 55 3-3-1a硫化鎘量子點之製備 55 3-3-1b硒化鎘量子點之製備 56 3-3-2 矽基板之準備 58 3-3-3薄膜之製備 58 3-3-3a電噴霧系統 58 3-3-3b電場收集器 61 3-4 分析儀器及方法 ……………………………………………………62 第四章 實驗結果 ………………………………………………………...69 4-1鍍膜條件之改進 ……………………………………………………69 4-1-1收集量 70 4-1-1a膠體溶液的分散程度 71 4-1-1b不同比例之載流氣體和環流氣體 72 4-1-1c重新設計電暈放電電極 76 4-1-2粒徑的控制 78 4-1-2a不同corona discharge電流值 79 4-1-2b控制製備電噴霧溶液時間 82 4-1-3薄膜粒徑隨收集電壓之變化 82 4-1-4薄膜粒徑隨收集位置之變化 84 4-1-5最佳鍍膜收集條件 86 4-2 利用微波法製備p-n型量子點奈米微粒 ……………………………..88 4-2-1製備硫化鎘量子點 88 4-2-1a不同微波加熱溶劑 88 4-2-1b不同微波溫度 92 4-2-1c硫化鎘微粒之晶相 94 4-2-1d硫化鎘微粒之組成 95 4-2-2製備不同前驅物元素比例之硫化鎘量子點 96 4-2-2a光譜分析 96 4-2-2b組成分析 99 4-2-3製備掺雜銅之硫化鎘量子點 101 4-2-3a光譜分析 101 4-2-3b TEM分析 103 4-2-3c晶相分析 103 4-2-4製備硒化鎘量子點 105 4-2-4a反應溫度效應 105 4-2-4b反應時間效應 107 4-2-4c微波製備硒化鎘量子點 108 4-2-4d TEM分析 110 4-2-4e組成分析 111 4-2-4f晶相分析 112 4-3電噴霧溶液的粒徑分佈 ……………………………………………...113 4-3-1 TEM分析 113 4-3-2 SMPS粒徑分析 114 4-3-2a硫化鎘之SMPS粒徑分析 114 4-3-2b改變不同硫化鎘前驅物元素比例之SMPS粒徑分析 115 4-3-2c硫化鎘掺雜銅之SMPS粒徑分析 116 4-3-2d硒化鎘之SMPS分析 116 4-4 P-N型薄膜之製備 …………………………………………………..117 4-4-1光譜分析 117 4-4-1a不同前驅物元素比例之硫化鎘薄膜光譜分析 117 4-4-1b掺雜銅之硫化鎘薄膜光譜分析 120 4-4-1c硒化鎘薄膜之光譜分析 121 4-4-2陰極發光分析 122 4-4-2a不同前驅物元素比例硫化鎘薄膜之陰極發光分析 122 4-4-2b硫化鎘掺雜銅薄膜之陰極發光分析 123 4-4-2c硒化鎘薄膜之陰極發光分析 123 4-4-3電阻式感測型態分析 124 4-4-3a硫化鎘薄膜型態分析 124 4-4-3b掺雜銅之硫化鎘薄膜型態分析 125 4-4-3c不同前驅物元素比例硫化鎘之薄膜型態分析 126 4-4-3d硒化鎘之薄膜型態分析 127 4-4-4薄膜組成分析 128 4-4-5薄膜晶相分析 130 4-4-5a不同前驅物元素比例之硫化鎘薄膜晶相分析 130 4-4-5b掺雜銅之硫化鎘薄膜晶相分析 132 4-4-5c硒化鎘之薄膜晶相分析 133 4-4-6薄膜表面形態分析 134 4-4-7薄膜發光觀察 136 第五章 結論 ……………………………………………………………137 參考文獻 ………………………………………………………………..139

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