研究生: |
羅祥助 Lo, Hsiang-Chu |
---|---|
論文名稱: |
水平式MOCVD反應器之熱流場及氮化鎵磊晶計算分析 Numerical Analysis of the Thermofluid Fields and GaN Epitaxy in Horizontal MOCVD Reactors |
指導教授: |
楊天祥
Yang, Tian-Shiang |
學位類別: |
碩士 Master |
系所名稱: |
工學院 - 機械工程學系 Department of Mechanical Engineering |
論文出版年: | 2023 |
畢業學年度: | 111 |
語文別: | 中文 |
論文頁數: | 191 |
中文關鍵詞: | MOCVD反應器 、溫度均勻性 、幾何優化 、製程參數分析 |
外文關鍵詞: | MOCVD reactor, temperature uniformity, geometry optimization, parameter study |
相關次數: | 點閱:83 下載:0 |
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有機金屬化學氣相沉積(Metal Organic Chemical Vapor Deposition, MOCVD)是目前半導體製造的主流製程方法,有機金屬氣體分子經過一系列的化學反應在晶圓表面生長薄膜,其廣泛運用在氮化鎵相關之半導體製造上。此種技術必須精準地控制氣體的流動以及晶圓表面的溫度分佈,以確保磊晶的品質以及生長速率。因此,為了幫助水平式單晶圓反應器的設計,本文建立簡化的數值模型,並且對其進行熱流場以及化學場的數值計算與製程參數分析。
為了符合設計人員階段性的需求,本文將研究分為三個階段進行逐步分析。第一階段為流場分析,以腔內氣體的流線、流速和壓力分佈做為比較依據,發現維持圓形腔體、擴大進氣道寬度、更改直線型進氣道銜接面和增加遮蔽墊片的遮蔽範圍,能夠讓腔內氣體的流動更加穩定且均勻,並且進一步確定流場優化後的幾何模型。第二階段為熱流場分析,本階段延續第一階段優化後的腔體幾何再加上加熱、冷卻之相關部件進行計算。本文以平坦區範圍和溫度不均勻值做為比較依據,發現增加加熱器圈數、擴大加熱器半徑、增厚內部大盤厚度、抬升加熱器高度和降低晶圓目標溫度,能夠改善晶圓的溫度均勻性並滿足製程人員的要求(晶圓表面溫度偏差小於3 °C),並且進一步確定熱流場優化後的幾何模型。此外,本文還利用一套簡易的方法來預估晶圓的翹曲高度,並探討其對於晶圓表面溫度均勻性的影響。第三階段為氮化鎵生長速率分析,由於計算資源有限,本文將三維模型再簡化成二維模型,並且利用第二階段優化後的溫度計算結果做為本階段的邊界條件進行氮化鎵生長速率之計算,最後再使用數值方法來預估平均薄膜生長速率和薄膜均勻性。此外,本文在此階段還調整晶圓表面的目標溫度、入口總流量和腔體壓力等製程參數,並探討此類參數對於氮化鎵薄膜生長速率和薄膜均勻性的影響,以提供現場人員相關參數調控的建議。
Metal organic chemical vapor deposition (MOVCD) is the mainstream process for growing thin films of gallium nitride (GaN) on wafer at present. To aid in the design of MOCVD reactors, we have calculated the thermofluid and chemical fields in such reactors. The numerical methodology of this work and the major findings of three sequential studies are discussed in this thesis. Specifically, in the first study, we examine how the streamline pattern of laminar flow in a reactor is affected by the reactor geometry, and then modify the geometry accordingly, so as to render the flow in the reactor as uniform as possible and identify an “optimized” basic geometry for the reactor. Then, in the second study, both the flow and the spatial temperature distributions in an optimized basic geometry are calculated. And the effects of a number of key reactor dimensions on the spatial uniformity of the wafer surface temperature are examined. The objective is to determine the basic reactor dimensions such that the wafer surface temperature has a satisfactorily uniform spatial distribution—typically requiring the within-wafer temperature deviation to be less than 3℃—while the average wafer temperature must be in the range of 800-1300°C to ensure successful thin film deposition. Last, in the third study, we calculate the coupling of the thermofluid and chemical fields for the geometry optimized in the previous study. And the thin film growth rate and its spatial uniformity for the optimized geometry are estimated. Moreover, a systematic process parameter study is carried out, so as to ‘optimize’ the GaN film growth rate and uniformity. For example, the numerical results indicate that increasing the working gas flowrate can improve both the film growth rate and its within-wafer uniformity. Meanwhile, increasing the reactor pressure would decrease the film growth rate but increase its uniformity.
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