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研究生： 黃羿詠
Ng, Yih-Yeong
論文名稱： 電漿輔助化學氣相沈積法成長類鑽碳膜
Diamond-like Carbon Films Deposited by Plasma-assisted Chemical Vapor Deposition
指導教授： 洪昭南
Hong, Chau-Nan
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年： 2014
畢業學年度： 102
語文別： 中文
論文頁數： 123
中文關鍵詞： 類鑽碳 、磨耗 、硬度
外文關鍵詞： Diamond-like Carbon, wear, hardness
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    • 類鑽碳膜具有高硬度、絕緣、耐磨耗、高熱導、抗氧化、耐腐蝕等特性，已被廣泛應用於工業界。然而，類鑽碳膜在硬度及耐磨耗上之持續提升，一直是被研發之對象。本研究利用電漿輔助化學氣相沉積法，在不同製程條件下進行一系列實驗，期望製備具有高硬度及低磨耗之類鑽碳薄膜。實驗結果顯示，基板溫度對薄膜硬度具有顯著的影響；而高壓環境以及利用C60作為輔助碳源雖然會降低薄膜硬度，然而大幅提升薄膜之耐磨耗。本研究以乙炔為碳源，成功製備硬度高達35.70 GPa之類鑽碳薄膜；利用C60作為輔助碳源，則成功製備同時具有26.48 GPa之高硬度與87.77 (10^-7mm3/mN)之低磨耗的類鑽碳薄膜；利用高壓環境，也成功製備同時具有25.38 GPa之高硬度與84.42 (10^-7mm3/mN)之低磨耗的類鑽碳薄膜。

    The C60 incorporated diamond-like carbon films with low wear as well as high hardness were deposited on high temperature Si(100) substrate by RF-plasma-assisted chemical vapor deposition under different C60 content in acetylene. The lowest wear rate was achieved by 87.77 (10^-7mm3/mN) with 26.48 GPa in hardness. Incorporation of C60 into DLC decreases hardness, however decreases wear rate as well as friction coefficient within a range of suitable C60 content; beyond this range, over content of C60 endows DLC with high roughness therefore increases wear rate as well as friction coefficient.

    總目錄 口試通過證明書 I 中文摘要 II 英文摘要 III 誌謝 X 總目錄 XI 表目錄 XIV 圖目錄 XVI 第一章 緒論 1 1-1 前言 1 1-2 類鑽碳薄膜的歷史回顧 3 第二章 理論基礎 6 2-1 類鑽碳膜 6 2-1-1類鑽石薄膜 8 2-1-2類石墨薄膜 11 2-1-3類高分子薄膜 12 2-2 類鑽碳薄膜的成長機制 17 2-3 離子被覆技術 24 2-3-1離子轟擊效應 26 2-4 電漿技術 27 2-4-1電漿的基本性質 27 2-4-2電容耦合平板電漿技術 36 2-4-3平板式RF電漿技術 39 第三章 實驗參數與研究方法 42 3-1 實驗流程 42 3-2 實驗設計 43 3-2-1碳源的選擇 43 3-2-2加入富勒烯的構想 46 3-2-3高基板溫度的實驗 48 3-2-4實驗參數 49 3-3電容耦合式電漿系統 50 3-3-1電容耦合式電漿輔助物理氣相沉積系統 50 3-3-2電漿反應器之設計 51 3-3-3 RF電源供應器 52 3-3-4碳源提供 52 3-3-5溫度量測及控制 53 3-3-6抽氣與真空系統 54 3-4實驗藥品材料 55 3-4-1實驗藥品及氣體 55 3-4-2基板材料 55 3-5 實驗操作 57 3-5-1 基板前處理 57 3-5-2 實驗操作步驟 57 3-6 分析與鑑定 59 3-6-1 表面型態觀察 59 3-6-2 成長速率測量 60 3-6-3 硬度測量 60 3-6-4 殘留應力分析 61 3-6-5薄膜結構分析 62 第四章 結果與討論 66 4-1以乙炔為碳源(1) 66 4-2以乙炔為碳源(2) 72 4-3以乙炔和C60為碳源 91 第五章 結論 112 第六章 參考文獻 114

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