利用電化學沉積製備具包覆銀奈米粒子陣列之多孔性陽極氧化鋁，可完成具有光致導電率功能的二維薄膜，並應用於光開關元件中。當選擇合適的激發光源入射至此薄膜，可激發其上銀奈米粒子之局域性表面電漿共振效應，使得二維銀奈米粒子陣列之多孔性氧化鋁具有導電能力，且其導電率與激發光源之功率大小及激發波段存在著一高度相依性。
在本論文中，我們延續了羅本超學長的實驗，進一步探討包覆銀奈米粒子之多孔性陽極氧化鋁薄膜之孔洞尺寸效應與孔洞間距效應對於光致導電率之影響，期望發展出一具波長可調之光致導電率增強薄膜。藉由改變多孔性陽極氧化鋁之製程參數，如陽極氧化電壓與擴孔時間，可控制多孔性氧化鋁薄膜上孔洞間距與孔洞大小，進而成長出具不同直徑大小與空間分布之銀奈米粒子陣列。具備不同粒子直徑與間距的銀奈米粒子二維陣列，其於吸收光譜上之局域性表面電漿共振的行為也會不同。利用此光學特性，我們可以有效的製備出符合我們想要的工作範圍之光致導電率增強薄膜，完成一具可調性之光開關元件。

The dielectric porous anodic aluminum oxide films (AAO) with embedded two-dimensional (2D) silver nanoparticles array have been fabricated by electrochemical deposition. There are have the function of photo-induced conductivity and can be apply to the optical photon switching. When an appropriate laser light source is emitted to the 2D Ag anoparticles array of AAO films, the localized surface plasmon resonance (LSPR) is excited. The dielectric AAO films with embedded 2D Ag nanoparticles thus exhibit the conductivity, is called the photoconductivity, which has the high dependence of laser wavelength and laser power.
In this thesis, we follow the experiment which arried out by Ben-Chao Lau. The experiment proves the photo-induced electrical conduction can be achieved by pours anodic aluminum oxide with embedded silver nanowires (Ag/AAO). Here, we will change the pore diameter and inter-pore spacing to investigate the influence of photocurrent and photoconductivity of Ag/AAO substrate. By changing the pore size and inter-pore distance, the absorption spectrum of these substrates can expect the phenomenon for the plasmon resonance peak appear shifting and broadening. The diameter of pores can changed with different etching time, and the distance of inter-pore also can be controlled by applying the different anodic voltage. Thus, we can fabricate many varied Ag/AAO films and measuring photocurrent at different condition. Therefore, we expecting these varied Ag/AAO films have ability for developing a high tolerance and tunable wavelength of optical photon switching base on the Ag/AAO film.

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