微機電開關在反覆的切換過程中經常會受到機械衝擊，因此其疲勞
破壞是影響系統可靠度一個很大的因素，本實驗室研究團隊針對這個問題提出一系列的研究。在巨觀部分已完成電磁致動懸臂樑實驗。以及在理論部分提出數值分析等方法。然而在微觀的尺度下，無法直接藉由外界的儀器量測其位移以及接觸力之值，希望利用電路偵測開關切換時的位移變化，將有助於探討微開關之機械特性，故藉由 CIC 下線的方式，加入接近實際應用面的尺度。本研究將建立一個微開關系統，設計電容式感測電路並配合微開關的初步製作，並進行後製程測試。本文利用 CIC 委託台積電的 0.35 μm 製程進行微開關系統的設計與製作。開關的部分包含了上下、側向之懸臂樑以及雙鉗樑結構，懸臂樑之驅動電壓設計在5 到10 V，而雙鉗樑結構之驅動電壓超過30 V。感測電路設計的部分，包含微分器式以及差動輸出式兩種電路，其解析度範圍在12 mV/fF 至 19 mV/fF。完成晶片佈局後向 CIC 提出下線申請，由台積電代為製作。晶片完成之後，將進行測試，後製程部分在成功大學微奈米科技中心進行，其利用 BOE 或 Silox Vapox III 蝕刻介電層以釋放微結構。此外也針對運算放大器之交流、直流以及暫態等特性作測
試，測試的結果由於外界雜訊干擾導致電路性能稍減，但是其趨勢與模擬符合。由於在後製程製作上的困難，目前無法順利製作出微開關，然而其中的經驗應當對未來對微開關上之設計以及製作有所助益。

Contact type Microelectromechanical (MEMS) switches are usually subjected to mechanical impact forces during operation and the induced fatigue fracture is traditionally
one major concerns for the reliability and longevity of these devices. Therefore, a systematic and integrated study on this subject is important and necessary. During the past three years, both the optimal dynamic scheme for switch operation and its associate numerical analysis schemes, as well as the validation using a macro scale equivalent system, have been performed by our research group. However, it still requires a micro switch structure to further validate the proposed scheme in MEMS. The motivation and goal of this work is therefore to design and fabricate a CMOS-MEMS switch system for measuring the dynamic behavior and to validate the proposed dynamic scheme. The TSMC 2P4M 0.35 μm process, supported by the Chip Implementation Center (CIC) is used to design and fabricate the test structures. Both cantilever and fixed-fixed beams are designed to perform either vertical or horizontal operations. The pull-in voltages are estimated as 5 to 10V in cantilever beam and over 30V in fixed-fixed beams. For the sensing circuit design, Both differentiator and differential output types capacitance sensing circuit are designed with gains ranged from 12 mV/fF to 19 mV/fF. This designs are layout and subsequently fabricated by TSMC through CIC tape out service. After finishing the chip fabrication, the post process are performed by us at NCKU using an etchant (either BOE or Silox Vapox III) to etch the dielectric layer for releasing the suspended structures of the micro switches . In addition, we also characterize the performance of the operational amplifiers and find that AC response, DC response, and Transient response are degraded by the presence of noise but the general trends of them are essentially identical to the predicted values using Hspice. Due to the unpredicted
difficulty in post-processing, it fails to produce a workable switch currently. Nevertheless, the lessons and experiences gained from this work are still invaluable for future design and fabrication of MEMS contact siwtches .

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