| 研究生: |
謝宗翰 Hsieh, Tsung-Han |
|---|---|
| 論文名稱: |
成長於具週期性奈米結構的磁性酞菁類錯合物薄膜之研究 Study of magnetic phthalocyanine complexes films deposited on periodic nanostructure substrates |
| 指導教授: |
周維揚
Chou, Wei-Yang |
| 學位類別: |
碩士 Master |
| 系所名稱: |
理學院 - 光電科學與工程學系 Department of Photonics |
| 論文出版年: | 2012 |
| 畢業學年度: | 100 |
| 語文別: | 中文 |
| 論文頁數: | 93 |
| 中文關鍵詞: | 奈米壓印 、鎳酞菁 、矯頑力 、磁異向性 |
| 外文關鍵詞: | Nanoimprint lithography, Nickel phthalocyanine, coercivity, magnetic anisotropy |
| 相關次數: | 點閱:82 下載:1 |
| 分享至: |
| 查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
本論文利用奈米壓印微影技術聚熱壓亞醯胺(polyimide, Nissan, PI RN-1349)製作週期性奈米結構。製作出線寬400、600、800和1200 nm之週期性奈米溝槽,在此週期性奈米結構上成長鎳酞菁磁性薄膜,探討鎳酞菁磁性薄膜的矯頑力與磁異向性。
由超導量子干涉磁量儀(SQUID VSM)量測在不同線寬奈米溝槽上成長之磁性有機半導體薄膜的磁滯曲線可知,當外加磁場平行奈米溝槽時獲得的矯頑力均大於外加磁場垂直奈米溝槽的情形,在溫度10 K與溝槽線寬為1200 nm的條件下可獲致最大的矯頑力異向比約1.43;最小的矯頑力異向比1.08則發生於溝槽線寬為600 nm的條件下。此外,在溫度10 K下外加磁場平行線寬800 nm奈米溝槽時可獲得最大矯頑力363.9 Oe,是無經壓印過程之樣品的1.5倍。
由原子力顯微鏡(AFM)觀察,在不同線寬奈米溝槽上鎳酞菁成長的情形,在奈米溝槽頂部的鎳酞菁成長具有方向性,晶粒均勻且連續,而在奈米溝槽底部的鎳酞菁成長則無序,晶粒形成塊狀結構以及顆粒狀,比較特別的是在線寬800 nm的溝槽條件下,鎳酞菁晶粒形狀為橢圓狀,其他線寬均為塊狀結構。而顯微拉曼激發光譜(micro-Raman spectroscopy)分析,可看出鎳酞菁分子會因受熱膨脹,造成峰值1500 cm-1處的C-N-C鍵結的原子振動頻率往低頻移動,且溫度也影響鎳酞菁分子的結晶,導致半高寬變大。但是在X光繞射光譜(XRD)的結果分析中,顯示出鎳酞菁分子並不會因成長在週期性奈米結構上而導致晶格上的變化,其繞射峰值的中心點與半高寬一致。
The properties of magnetic organic semiconductor films deposited on nanoimprinted polyimide (PI) gratings are studied. This periodic nanogratings is constructed by hot embossing nanoimprint lithography to result in the line widths of 400, 600, 800, and 1200 nm. Nickel phthalocyanine (NiPc) magnetic films are deposited onto these PI nanogratings to investigate the coercivity and magnetic anisotropy.
When the applied magnetic field is parallel to the nanogratings, the coercivity of NiPc is greater than the perpendicular case for every sample deposited on various line-width gratings. As the NiPc films were measured at temperature of 10 K, the maximum (about 1.43) and minimum (about 1.08) coercivity anisotropy ratios were obtained for the grating widths of 1200 and 600 nm, respectively. A maximum coercivity of 363.9 Oe was obtained for the NiPc film grown on 800 nm wide gratings, which is 1.5 times of that formed on plane PI surface.
Atomic force microscopy images show that the grains of NiPc deposited on the ridge of PI gratings are uniform and continuous, whereas the grains at the bottoms of the grating trenches are disordered. Only oval NiPc grains are formed on 800 nm wide PI gratings; however, the grains have a block structure for other NiPc films. The NiPc film quality was analyzed by micro-Raman spectroscopy and x-ray diffraction (XRD) after annealing process. A red shift for the peak at 1500 cm-1 corresponding C-N-C bond stretch was observed, indicating that the temperature affect the crystallization of NiPc molecules. However, no obvious changes appear in XRD, implying that the lattice of NiPc is stable on various nanogratings.
1.賴政豪, “有機磁性半導體薄膜成長於奈米壓印的介電層之特性研究” 國立成功大學碩士論文, 2011
2.H. Husstedt et al., “Precise Alignment of a Magnetic Sensor in a Coordinate Measuring Machine,” IEEE Sensors Journal, Vol. 10, NO. 5, 2010
3.D. Makarov et al., “Rolled-Up Magnetic Sensor:Nanomembrane Architecture for In-Flow Detection of Magnetic Objects,” Acs Nano, Vol. 5, pp 7436–7442, 2011
4.M. Vopsaroiu et al., “A new magnetic recording read head technology based on the magneto-electric effect,” Journal of Physics D: Applied Physics, Vol.40, pp 5027–5033, 2007
5.G.N. Phillips et al., “Scanning magneto-resistance microscopy with FIB trimmed yoke-type magneto-resistive tape heads,” Sensor and Actuators A, Vol. 91, pp 34-38, 2001
6.M. Moradi et al., “vity enhancement of the magneto-optic Kerr effect in glass/Al/SnO2/PtMnSb/SnO2 structure,” Optics Communications, Vol. 283, pp 5053–5057, 2010
7.Vasyl G. Kravets et al., “ancement of magneto-optical effects in magnetic nanoparticles near gold-dielectric surfaces,” Applied Optics, Vol. 49, No. 26, 2010
8.R.A. de Grot et al., “New Class of Materials: Half-Metallic Ferromagnets,” Physical Review Letters, Vol. 50, pp 2024, 1983
9.J. J. Versluijs et al., “Magnetoresistance of Half-Metallic Oxide Nanocontacts,” Physical Review Letters, Vol. 87, pp 026601, 2001
10.Y. Matsuo, et al., “Stage structure and electrical properties of rubidium-doped pentacene,” Physics Letters A, Vol. 321, pp 62, 2004
11.K. Hayashi, et al., “Fabrication of iodine-doped pentacene thin films for organic thermoelectric devices,” Journal of Applied Physics, Vol. 109, pp 023712, 2011
12.M. Cazayous et al., “Iodine insertion in pentacene thin films investigated by infrared and Raman spectroscopy,” Physical Review B, Vol. 70, pp 081309, 2004
13.M. Szybowicz et al., “Orientation study of iron phthalocyanine (FePc) thin films deposited on silicon substrate investigated by atomic force
microscopy and micro-Raman spectroscopy,” Journal of material Science, Vol. 47, pp 1522-1530 , 2011
14.T.V. Basova et al., “Investigation of liquid-crystalline behavior of nickel octakisalkylthiophthalocyanines and orientation of their films,” Materials Science and Engineering, Vol. 22, pp 99-104, 2002
15.W. Y. Chou et al., “New Pentacene Crystalline Phase Induced by Nanoimprinted Polyimide Gratings,” The Journal of Physical Chemistry C, Vol. 116, pp 8619−8626, 2012
16.M. H. Chang et al., “Polymorphic transformation induced by nanoimprinted technology in pentacene-film early-stage growth,” Applied physics, Vol. 97 , pp 183301, 2010
17.B. D. Cullity, “Introduction to Magnetic Materials,” Addison-Wesley, Reading, MA, 1992
18.J. Bardeen W. H. Brattain et al., “The transistor, a semi-conductor triode,” Physical Review, Vol. 74, pp 230, 1948
19.C. K. Chiang et al., “Electrical conductivity in doped polyacetylene,” Physical Review, Vol. 39, pp 1098, 1977
20.B. H. Hamadani et al., “Undoped polythiophene field-effect transistor with mobility of 1 cm2 v-1s-1,” Applied Physical Letters, Vol. 91, pp 243512, 2007
21.J. Li et al., “High-performance thin-film transistors from solution-processed dithienithiophene polymer semiconductor nanoparticles,” The Journal of the American Chemical Society, Vol. 20, pp 6, 2008
22.S. Liu et al., “Organic semiconductor-carbon nanotube bundle bilayer field effect transistors with enhanced mobilities and high on/off ratio,” Applied Physical Letters, Vol. 92, pp 053306, 2008
23.S. Zankovych, et al., “Nanoimprint lithography: challenges and prospects,” Nanotechnology, Vol. 12, pp 91, 2001
24.M. Tang et al., “A New Moiré Grating Fabrication Technique Using Hot Embossing Lithography,” Applied Mechanics and Materials, Vol . 83 , pp 7-12, 2011
25.Sung-Hoon Hong, et al., “Replication of cicada wing’s nano-patterns by hot embossing and UV nanoimprinting,” Nanotechnology, Vol. 20, pp 385303, 2009
26.Chun-Hung Chen et al., “Dual Metallic Pattern Transfer Based on Metal-Film Contact Imprinting Lithography, ” Journal Of Microelectromechanical Systems, Vol. 20, NO. 1, 2011
27.Lucas H. Ting et al., “Effect of Silanization Film Thickness in Soft Lithography of Nanoscale Features,” Journal of Nanotechnology in Engineering and Medicine, Vol. 2,pp 041006-1, 2011
28.J. Zhang et al., “Fabrication of flexible mold for hybrid nanoimprint-soft lithography,” Microelectronic Engineering, Vol. 88, pp 2192-2195, 2011
29.E Mele et al., “Combined capillary force and step and flash lithography,” Nanotechnology, Vol. 16, pp 391-395, 2005
30.Niyaz Khusnatdinov. Gary Doyle et al., “Fabrication of Nano and Micro Optical Elements by Step and Flash Imprint Lithography,” Proc. of SPIE ,Vol. 6110, pp 61100k-1, 2006
31.Zhongqiang Liu et al., “Theoretical investigation of the molecular, electronic structures and vibrational spectra of a series of first transition metal phthalocyanines,” Spectrochimica Acta Part A, Vol. 67, pp 1232–1246, 2007