本論文利用室溫下的光調制光譜研究砷銻化鎵的表面本徵-N+摻雜(Surfaceintrinsic-n+,SIN+)結構的表面費米能階及其表面態密度。根據熱離子幅射理論及電流傳輸理論，半導體表面費米能階VF及其表面態密度可由其表面勢壘與激發光強度的關係求得。本論文首先量取不同激發光強度下的光調制光譜並求出各不同激發光下的表面勢壘，再與理論所推導的公式擬合，求得砷銻化鎵的表面費米能階在導帶下0.66eV處，而其表面態密度則為9.96×1012cm-2，此結果為首次由實驗量得，尚未出現在任何文獻上。
其次為利用螢光光譜研究氮化銦的能隙及其載子濃度。樣品的結構為1μm的InN成長緩衝層AlN上，基板為Si(111)，由其螢光光譜可求得氮化銦的能隙。由於氮化銦的能隙及其螢光光譜受到載子濃度的影響，把所得的螢光光譜與文獻中的理論公式擬合，可得氮化銦的載子濃度，所得的載子濃度，和文獻中的資料相吻合。

This thesis uses room temperature photoreflectance (PR) to investigate the Fermi level pinning and surface state density of a GaAs0.65Sb0.35 surface intrinsic-n+ (SIN+) structure. Base on the thermionic emission theory and current-transport theory, the surface Fermi level VF and the surface state density are determined experimentally from the dependence of the surface barrier height on the pump beam intensity. The surface state density Ds is estimated as approximately 9.96×1012cm-2, and the Fermi level is located 0.66 eV below the conduction band edge at the surface. The surface state density of GaAsSb has never been reported and is measured for the first time in our study.
The other part of this thesis measures the photoluminescence (PL) spectrum of an InN sample which consists of 1μm InN top layer on AlN buffer layer which has been previously grown on Si(111) substrate. The band gap of InN is determined directly from the PL spectrum. Since the band gap and PL spectrum are related with the carrier concentration, the carrier concentration of InN is determined by fitting the PL spectrum to the theoretical formula found in literature. The carrier concentration and its corresponding band gap obtained are consistent with those found in literature indicating that the PL spectrum provides a contactless and nondestructive approach to determine the Fermi level as well as the carrier concentration.

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