本論文主要研究高立體規則性之有機高分子半導體poly(3-hexylthiophene)（RR-P3HT）為主動層之薄膜電性晶體的元件特性。首先，使用不同溶劑配製RR-P3HT溶液，包含下列溶劑：p-xylene、1,2,4-trichlorobenzene（TCB）、toluene、及chloroform，再利用旋轉塗佈法製作RR-P3HT薄膜當主動層的電晶體元件。本研究分為三部份，首先進行不同溶劑對RR-P3HT薄膜電晶體元件電傳輸性質的影響研究，包含輸出與轉移的電特性、通道長度效應、遲滯效應、與接觸電阻和通道電阻；第二部份，進一步討論元件存放環境對元件電傳輸性質的影響；第三部份，進行RR-P3HT薄膜結構分析，使用拉曼光譜、X-ray繞射量測、原子力顯微鏡、與紫外－可見光吸收光譜、和光激發光譜等技術，研究不同溶劑對RR-P3HT薄膜結構的影響。
第一部份，研究不同溶劑對RR-P3HT薄膜電晶體元件電傳輸性質的影響。我們將RR-P3HT溶於不同沸點的溶劑，利用旋轉塗佈法製成RR-P3HT薄膜為主動層之電晶體元件，再藉由輸出曲線及轉換曲線的量測結果來比較不同溶劑對RR-P3HT薄膜電晶體元件電傳輸性質的影響。我們得知使用高沸點溶劑溶解RR-P3HT所製作的以RR-P3HT薄膜為主動層之電晶體元件的電傳輸性質較佳、磁滯效應較不明顯、接觸電阻及通道電阻較小。
第二部份，研究元件存放環境對元件電傳輸性質的影響。首先將已量測的薄膜電晶體元件於真空環境中靜置後，再進行量測輸出曲線及轉換曲線，比較電晶體元件在真空靜置前及真空靜置後電性參數的變化。我們建議真空靜置可以提升電晶體元件的效能，如場效載子遷移、開關比、臨界電壓及次臨界斜率等方面的改善。除此之外，真空靜置亦會造成一些非理想化效應，如遲滯現象變得更明顯，接觸電阻及通道電阻變大等現象。
第三部份，研究溶劑效應對RR-P3HT薄膜結構的差異性，藉由分析來觀察薄膜微結構的有序性、薄膜的表面形態學、高分子鏈內及高分子鏈間的載子傳輸模式，我們建議RR-P3HT薄膜結構與其所使用溶劑沸點的高低是有相關性的，如使用高沸點溶劑所製作的RR-P3HT薄膜之有序性較佳。我們也建議溶劑沸點高低所影響的薄膜結構為主宰薄膜電晶體元件的場效載子遷移率的重要因素。

In this study, we studied the thin-film structures and electronic transport properties of poly(3-hexylthiophene) (RR-P3HT) films in organic thin-films transistors (OTFTs). The RR-P3HT films were prepared by solution deposition through a spin-coating technique using several different solvents which have different boiling points. In part 1, the solvent effects on the device performance of RR-P3HT OTFTs were investigated. In part 2, effects of various storage conditions in vacuums for RR-P3HT OTFTs on device electrical characterizations were investigated. In part 3, we studied the thin-film structure and morphology of the corresponding RR-P3HT films.
In part I, we reported on the solvent effects of electrical characterization on RR-P3HT OTFT devices; the solvents included p-xylene, 1,2,4-trichlorobenzene (TCB), toluene, and chloroform. We found that the RR-P3HT OTFTs that used a higher boiling point solvent, i.e. TCB, for depositing polymer active layers had better device performance, a smaller hysteresis phenomenon, and lower contact and channel resistance. The results of our experiment suggested that the solvent used for preparing RR-P3HT films played an important role in electrical characteristics of OTFT devices.
In part 2, we investigated the influence of storage time for a long period in vacuum conditions on the device characteristics of RR-P3HT OTFTs. We found that the device performance improved after the transistors were kept in vacuum for a while and included enhanced field-effect mobility, enlarged on-off current ratios, smaller absolute values of threshold voltage, and sharper sub-threshold swings, suggesting a negative effect from the residual solvent. However, the hysteresis loops were more apparent and the contact and channel resistance became higher. The observations were attributed to the devices stored under vacuum conditions, allowing the residual solvent to escape from RR-P3HT films, thus leaving some vacancies to act like trapped states. At the same time, the effects of residual solvents on the device characteristics were also decreased; we still observed the improved performance of RR-P3HT OTFTs.
In part 3, we studied the structural properties of RR-P3HT films deposited on the gate dielectric surfaces by spin-coating methods using various solutions. The RR-P3HT films were characterized by micro-Raman spectroscopy, X-ray diffraction, atomic force microscopy, UV-Vis absorption spectroscopy, and photoluminescence spectroscopy. The results revealed that using a high boiling point solvent process, i.e. TCB, resulted in a more ordered structure of RR-P3HT films. The observations provided a reasonable explanation for better device performance of RR-P3HT OTFTs when using TCB as a solvent. Consequently, we suggested that the used solvents played an important role, not only in RR-P3HT thin film structures but also the corresponding OTFT characterizations.

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