本論文中，我們成功的研製具有高發光效率與抗靜電能力之氮系列發光二極體。
　　
　　首先，我們以氧化錫銦 (ITO) 作為透明電極層來改善傳統以鎳/金(Ni/Au) 為透明電極之發光效率。由實驗結果：與傳統以鎳/金為透明電極的發光二極體相比，光輸出強度成功的獲得改善達到30% 之多。為了提升光取出的效率，我們必須讓發光二極體主動發光層中的光子找到更多的脫離管道；也就是說，透過粗化處理磊晶層表面，可以明顯的提升光子由磊晶層穿透至空氣中的機會。在20毫安培的電流驅動之下，LED-I (Ni/Au平滑磊晶面)、LED-II(ITO 平滑磊晶面)和LED-III(ITO加粗化磊晶面)的EL強度分別為:62.74mcd、84.2mcd與147.66mcd。接著藉由背面鋁薄反射膜的蒸鍍 (ITO粗化磊晶面加上背面鋁反射層)，其在EL強度(231.8mcd)方面甚至可以提升至超過50%，在可靠度方面也會明顯的優於一般沒有鋁反射層的發光二極體。
　　
　　因為二極體的特性，順向的靜電衝擊壓力可以達到3千5百伏。然而，可以發現沒有靜電保護設計下的元件(LED-IV)大約在反向靜電電壓300伏左右就會使元件毀壞。因此，在一般發光二極體內作靜電保護的設計將可避免因靜電壓的衝擊造成元件的損毀。具有靜電保護設計的發光二極體，其在人體模式下的抗靜電能耐大幅的改善從數百伏到1千5百伏，這大約是傳統發光二極體的5~6倍。再者，具靜電保護的設計的發光二極體，其發光效率並不低於傳統以氧化錫銦為透明電極的發光二極體(LED-IV為231.8mcd，LED-V為224.6mcd)。而且可靠度亦非常好，在1000小時長時間的點亮後，只有9%的衰減量。

　Nitride based light emitting diodes with high extraction efficiency and electrostatic discharge ability has been successfully fabricated in this investigation. Firstly, indium-tin-oxide (ITO) was used as the transparent contact layer to improve the light extraction of the traditional Ni/Au transparent contact LEDs. More than 30 % enhancement of output intensity was successfully achieved, compared with the traditional LEDs with Ni/Au transparent contact. The way to enhance the escape probability is to give the photons generated in the active layer of the LED structure multiple opportunities to find the escape cone. In other words, by roughening the surface of epitaxial layers, the opportunity of light escaping from the epitaxial layer to the air has been significantly increased. The 20 mA EL intensity of these samples was 62.74 mcd for LED-I (flat sample with Ni/Au), 84.2 mcd for LED-II (flat sample with ITO), and 147.66 mcd for LED-III (Rough sample with ITO), respectively. Furthermore, with backside aluminum reflector deposited (Rough sample with ITO and aluminum reflector), the EL-intensity (231.8 mcd) was indeed increased more than 50 %, and the reliability was also more superior to normal LEDs without reflector.
　　
　Due to the characteristics of p-n diode, the forward ESD stress voltage can reach up to 3.5 kV. However, it was found that the reverse ESD voltage was only around 300 V (for normal LEDs without ESD protection design, i.e. LED-IV). Therefore, ESD protection was designed into the normal LED. The LED diode can be protected from the damage due to electrostatic discharge. The electrostatic discharge ability of the LED with ESD protection could be greatly improved from several hundred to 1500 V in human body model (HBM) which was 5~6 times larger than the conventional one. Moreover, the light efficiency of LED with the ESD protection would still be as good as normal ITO LED (i.e. 231.8 mcd for the LED IV and 224.6 mcd for the LED V). The reliability was really good which was only decayed by 9% after more than 1000 hours life time testing.

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