隨著半導體元件製程日新月異，以矽晶圓為基板(Substrate)的積體電路也越來越來複雜，金屬矽化物的好處是可降低接面接觸電阻、閘極電阻，進而提高整個元件的驅動電流，反應時間或電路操作速度。
由於傳統鑄造冶金(Ingot Metallurgy, IM)的限制，金屬鑄錠在緩慢的凝固後，會有成份偏析、多孔性、及微結構不均勻等缺陷出現，雖然以熱處理及熱加工可改善這些現象，但卻無法完全消除；而利用粉末冶金的真空燒結法則可以得到高密度、細密的晶粒尺寸、均勻的微結構及等向性等優良的機械性質。
本研究主要探討真空燒結法對Cr-Si成份合金之影響，Cr-Si成份實驗中，使用二種不同成份比例，分別為Cr-65wt%Si，Cr-50wt%Si，以及不同的燒結溫度。利用抗折試驗、孔隙率、四點探針、SEM與XRD顯微結構等分析來評估真空燒結法對Cr-Si靶材性質之影響。
由本研究結果，製備Cr-Si合金製備的最佳真空燒結製程為Cr-65wt%Si在1330oC，Cr-50wt%Si在1410 oC有最低孔隙率、最高的緻密度、最佳的機械性質及最低的電阻值。

Along with semi-conductor unit system change with each passing day, ULSi takes Si wafer as Substrate become more and more complex.Metal- Silicides have the advantage which lowers the junction contact resistance, the gate resistance, then enhances the devices’ driving current, reaction time or operation velocity.
As a result of traditional casting metallurgy (Ingot Metallurgy, IM)have the limits. After the slow coagulation ,the metal ingot have the ingredient segregation, the porosity and non-uniform microstructure defects. Although it may improve these phenomena by the heat treatment and the hot-working, but actually is unable completely to eliminate; But the powder metallurgy(PM)-Vacuum sintering to be allowed to get the high density ,the close crystal grain size, the uniform microstructure , isotropy and so on the fine mechanical property.
This research dicuss effect of vacuum sintering temperature for microstructure and mechanical properties of Cr-Si alloy. In the Cr-Si experiment uses two kind of different proportions Cr-65wt%Si and Cr-50wt%Si; and different sintering temperature.Uses Transverse Rupture Strength(TRS) test, porosity, 4-point probe, SEM and microstructure analysis to estimate effect of vacuum sintering temperature for microstructure and mechanical properties of Cr-Si alloy.
The experiment as results show that 1330°C vacuum sintering for Cr-65wt%Si and 1410°C vacuum sintering for Cr-50wt%Si was optimum. It can improve the microstructure ,and mechanical properties of Cr-Si alloy.

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