本研究中主要探討鎳鐵(Ni80Fe20)與鎳鐵(Ni80Fe20)/銥錳(Ir20Mn80)薄膜系統的鐵磁共振效應與交換場效應。鐵磁共振訊號的偵測採固定磁場掃描頻率的形式，因此量測電路上採用一具有高傳輸係數的共平面波導管(CPW)覆晶(flip-chip)夾具設計。樣品採濺鍍法製膜，並配合磁光柯爾效應量測薄膜磁滯曲線。單層鎳鐵薄膜分別探討不同膜厚與退火溫度之鐵磁共振效應，鎳鐵/ 銥錳薄膜系統則著重於緩衝層對其交換場(excharge field)與鐵磁共振效應的影響。實驗結果上，擬合鐵
磁共振頻率顯示單層鎳鐵薄膜的飽和磁化強度隨膜厚
而增加(12~16 kOe )，而經磁退火只提高飽和磁化強
度(2~3 kOe)。本實驗製程下鎳鐵/銥錳薄膜系統在不
具有緩衝層下，即使經過磁退火也不具有交換場現象
，同時其飽和磁化強度如同單層的鎳鐵薄膜。但加入
3nm鎳鐵薄膜作為緩衝層時，薄膜晶相改善且有明顯
交換場(40~80 Oe)，此效應亦使得FMR頻率上升(在50~ 500 Oe間，上升0.7~1.4 GHz)。

In this study, the ferromagnetic resonance (FMR) effect and exchange field for Ni80Fe20 and Ni80Fe20/Ir20Mn80 thin films were investigated. The FMR signal was detected by a scanning-frequency mode at a fixed external field. A coplanar waveguide (CPW) design was especially proposed for the flip-chip test fixture. The films were fabricated by sputtering system. Magneto-optical Kerr effect (MOKE) was used to measure hysteresis loops for the samples. The ferromagnetic resonance in single-layer Ni80Fe20 films with various thickness was studied at different annealing temperature. Moreover, the effect of adding buffer layer on the Ni80Fe2/Ir20Mn80 system is also discussed and compared in this thesis FMR signals. The fitted results of FMR frequency versus external field dependent show that the saturation magnetization (~12 to 16 kOe) of single layer Ni80Fe20 films increase with film thickness, while the magnetic annealing process increases the magnetization about 2 to 3 kOe. Without buffer layers in no exchange bias effect was abservered the Ni80Fe20/Ir20Mn80 bilayer system has even after the films were annealed and several conditions we tried. The saturation magnetization of Ni80Fe20/Ir20Mn80 bilayer is close to that of the single layer film. With 3-nm Ni80Fe20 buffer layers, the crystalline phases of Ni80Fe20 /Ir20Mn80 films were improved, and the exchange fields of the films were observed. The exchange coupling effect yields the FMR frequency be increased (by 0.7~1.4 GHz in external field 50~500 Oe)

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