本研究利用脈衝雷射濺鍍系統成長鈷、鎵共摻雜氧化鋅稀磁性氧化物薄膜覆蓋於氮化鎵發光二極體，研究其光、電特性，並在外加磁場的狀況下觀察其元件電性特性的變化。
在薄膜磁阻的部分，我們發現在室溫下Co5%ZnO、Co7%ZnO、Co5%Ga2.5%ZnO這三種樣品於外加磁場500 oe即可量測到磁阻的變化。
在LED元件量測中，於注入電流20mA時發現覆蓋ZnO、Co5%ZnO、Co7%ZnO、Co5%Ga2.5%ZnO的LED元件，其光輸出功率分別為4.62mW(3.36V)、4.86mW(3.32V)、4.81mW(3.40V)、5.5mW(3.82V)，並計算其功率轉換效率(output power/input power)分別為6.80%、7%、7.07%及7.20%。
此外將LED元件置於外加磁場下量測其電性，發現覆蓋Co5%ZnO、Co7%ZnO、Co5%GaZnO薄膜的LED在外加磁場下，外加電流20mA時，最高可分別降低順向導通電壓(Vf) 0.04V、 0.036V、0.08V。

In the research, the Zn1-x-yCoxGayO thin films were grown on n-GaN termination of light-emitting diodes (LEDs) by pulsed laser deposition to study optical and electrical properties. The electrical properties of LEDs by applying a magnetic field have been studied.
In magnetoresistance(MR) measurement, we found that the MR of Co5% ZnO, Co7% ZnO and Co5 % Ga2.5% ZnO three samples at room temperature can be observed when a magnetic field is applied to 500 Oe.
In LEDs Measurements, when the LEDs are covered ZnO, Co5%ZnO, Co7% ZnO and Co5%Ga2.5%ZnO thin film, the optical output power are 4.62mW (3.36V), 4.86mW (3.32V), 4.81mW (3.40V) and 5.5mW (3.82V), respectively. The efficiency (output power / input power) are 6.80%, 7%, 7.07% and 7.20%, respectively when the injected current is 20mA.
In addition, the electrical properties of the LEDs are studied by applying a magnetic field. When the injected current is 20mA, the forward voltage (Vf) of LEDs covered Co5% ZnO, Co7% ZnO and Co5% GaZnO thin film in the magnetic field can be reduced to 0.04 V, 0.036V and 0.08V, respectively in the maximum.

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