在本文中，我們致力研究液相氧化法於砷化銦鋁材料上的特性表現。相較於其他氧化系統，液相氧化法系統不須外加其他能量輔助，僅需要酸鹼值測定器及溫度調節器保持操作在30-70 ℃環境便能成長均勻氧化薄膜。
在元件應用方面，我們成功應用液相氧化法於砷化銦鋁/砷化銦鎵高速電子移動率電晶體形成金氧半高速電子移動率結構，和傳統高速電子動率電晶體相比較，兩者皆具有完全夾止之特性，傳統高速電子移動率在最大閘極0 V偏壓下最大汲極電流304 mA/mm，最大轉導284 mS/mm，逆向崩潰電壓為-7.4 V；金氧半高速電子移電率電晶體在最大閘極1 V偏壓下最大汲極電流424 mA/mm，最大轉導254 mS/mm，逆向崩潰電壓-15.1 V，此外金氧半結構閘極漏電流可以改善超過5.5萬倍。高頻特性方面，傳統高速電子移動率電晶體及金氧半高速電子移動率電晶體之截止頻率分別為14.3 GHz及32.1 GHz，最大震盪頻率分別約30.6 GHz及59.4 GHz。

We have demonstrated that liquid phase oxidation (LPO) technique to grow native oxide films on InAlAs. The liquid phase oxidation system is simple, low cost and low temperature in comparison with the other oxidation system.
In addition, the InAlAs/InGaAs metamorphic HEMTs with a liquid phase oxidized InAlAs as gate insulators have been successfully fabricated. Both conventional HMET and metal-oxide-semiconductor metamorphic HEMT (MOS-MHEMT) with gate length and width of 0.65 μm × 200 μm exhibit complete pinch-off characteristics. For the conventional MHEMTs, the maximum drain current density is 304 mA/mm at maximum gate-to-source voltage of 0 V. The peak extrinsic transconductance is 284 mS/mm and the breakdown voltage is -7.4 V. For the MOS-MHEMT with gate oxide thickness of 6.3 nm, the maximum drain current density is 424 mA/mm at maximum gate-to-source voltage of 1 V. The peak extrinsic transconductance is 254 mS/mm. The breakdown voltage is -15.1 V. In addition, the gate leakage current density can be significantly improved for about 55,000 fold in the MOS-MHEMT structure in comparison with conventional MHEMT.
Furthermore, the cutoff frequencies of conventional MHEMTs and MOS-MHEMTs are 14.3 GHz and 32.1 GHz; the maximum oscillation frequencies are 30.6 GHz and 50.9 GHz, respectively.

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