在本論文中，主要探討高壓金氧半場效電晶體(HV MOSFET)改變各種不同之尺寸參數時，對off-state breakdown與熱載子可靠度之影響，本篇論文中所使用之元件主要改變三個尺寸參數:Lgs(源極至閘極邊緣長度)、Lg(閘極長度)、Lds(汲極至閘極邊緣長度)。
先描述高壓金氧半場效電晶體之優點及應用，接著介紹貫穿崩潰(punch-through BD)、接面崩潰(junction BD)、GIDL(Gate-Induced-Drain- Leakage)、以及熱載子效應之基本原理。
之後介紹本論文中所使用的量測方法及條件，以及所使用之元件結構，也會呈現ID-VG及ID-VD基本之電特性。
本文研究之主要內容部分，首先探討改變尺寸參數對崩潰電壓之影響，透過量測及電腦輔助模擬(TCAD)，可以發現改變Lg前後，主要有兩種不同之崩潰機制在主導，¬而改變Lgs並不影響崩潰電壓，且在不超過一定界線下，縮短Lgd並不會造成崩潰電壓之惡化。
經過需求之崩潰電壓篩選後，接著探討符合條件之元件的熱載子可靠度，從實驗結果得知不論縮短任一尺寸參數皆會造成熱載子可靠度之惡化，且其退化機制及位置皆相同，TCAD模擬結果也顯示Si/SiO2表面之衝擊離子化率(impact ionization rate)並無太大之差異，最後根據實驗結果分析改變哪一個尺寸參數能在不影響熱載子可靠度太多的情況下，帶來最大的效能改善。
關鍵字: 高壓金氧半場效電晶體，元件尺寸，熱載子導致之退化，閉態崩潰電壓。

In the thesis, hot-carrier-induced degradation and mechanism as well as the gate oxide integrity issue of high voltage metal-oxide–semiconductor field- effect transistors (HVMOS) with different layout parameters were investigated.
There were three kinds of parameter used in this thesis: Lgs (source-to-gate-edge), Lg (gate-length), and Lgd (drain-to-gate-edge).
First, the advantages and applications of HVMOS transistors were illustrated. Moreover, the basic theories of the punch-through breakdown, the junction breakdown, the gate-induced-drain-leakage (GIDL), and the hot carrier effect were also introduced.
The measurement setup device and the structure of our study were introduced. The measurement results of I-V characteristics including ID-VG & ID-VD was presented.
In the main part of content, the influence of varying the layout parameter on off-state breakdown was studied at first. By measurement and Technology on Computer Aided Design (TCAD), it could be observed that there were two different mechanisms dominating the breakdown before and after Lg is varied. The Lgs has a small influence on breakdown voltage. What’s more, shrinking Lgd under a certain limit would not worsen the off-state breakdown voltage.
After screening out the devices with qualified breakdown voltage, the hot carrier reliability of these devices were investigated. From the experiment results, the hot carrier reliability was deteriorated no matter which dimension parameter shrank. Besides, the hot carrier degradation mechanism and damaged position were also the same. The TCAD simulation indicated that impact ionization rate near Si/SiO2 had small difference in these devices. At last, according to the experiment results, shortening which parameter is the most effective way to increase the performance without affecting the hot carrier reliability too much.

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