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研究生：	許宇帆 Hsu, Yu-Fan
論文名稱：	可轉移式CsPbBr3磊晶薄膜中自然與人工微共振腔之雷射特性研究 Lasing Characteristics of Natural and Engineered Microcavities in Transferable CsPbBr3 Epitaxial Films
指導教授：	徐旭政 Hsu, Hsu-Cheng
學位類別：	碩士 Master
系所名稱：	智慧半導體及永續製造學院 - 關鍵材料學位學程 Program on Key Materials
論文出版年：	2026
畢業學年度：	114
語文別：	英文
論文頁數：	124
中文關鍵詞：	矽光子學、鈣鈦礦雷射、磊晶薄膜、異質整合、人工雷射共振腔
外文關鍵詞：	Silicon photonics, Perovskite laser, Epitaxial film, Heterogeneous integration, Artificial laser cavity
相關次數：	點閱：79 下載：0
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鹵化物鈣鈦礦因具有高光學增益、可調能隙與優異發光特性，被視為下一世代積體光子元件中具潛力的增益材料。然而，如何將高品質鈣鈦礦微共振腔雷射整合至矽光子平台，仍是目前的重要挑戰。本研究利用氣相磊晶法於雲母基板上成長可轉移式 CsPbBr₃ 磊晶薄膜，並探討其自然形成與人工加工微共振腔之雷射特性。
所製備之 CsPbBr₃ 磊晶薄膜厚度約為368.1 nm，展現良好的結晶品質與光學特性。光學量測顯示其具有明顯激子吸收峰，Urbach energy 約為16 ± 1 meV，顯示薄膜具有低能量無序與低缺陷密度。此外，利用變條紋長度法量測可得光學增益係數約為 338.8 cm⁻¹，證實此薄膜可作為高效能雷射增益介質。薄膜中自然形成之裂縫可作為平面內法布里–珀羅共振腔，產生低閾值雷射，雷射閾值約為62.4 μJ cm⁻²，Q factor可達2993，並具有高度偏振特性。另一方面，本研究亦透過聚焦離子束加工製作人工 CsPbBr₃ 微圓盤共振腔，成功實現迴廊模態雷射，其雷射閾值約為81 μJ cm⁻²，Q factor約為2816。最後，本研究將 CsPbBr₃ 磊晶薄膜與FIB蝕刻之微圓盤共振腔由雲母基板轉移至矽基板。轉移後，薄膜之PL與TRPL特性幾乎不變，人工微圓盤共振腔之雷射光譜與模態間也能良好保留，證明其幾何結構與光學侷限特性在轉移後仍可維持。此外，轉移後圓盤雷射在連續 240 分鐘量測下仍呈現穩定雷射輸出。整體而言，本研究建立了一個結合高品質 CsPbBr₃ 磊晶薄膜、自然與人工微共振腔雷射，以及異質轉移整合之平台，為未來發展可見光片上光源與矽基光子積體元件提供具潛力的實現途徑。

Halide perovskites are promising gain materials for next-generation integrated photonic devices because of their high optical gain, tunable bandgap, and excellent light-emitting properties. However, integrating high-quality perovskite microcavity lasers with silicon-based photonic platforms remains an important challenge. In this work, transferable CsPbBr₃ epitaxial films were grown on mica substrates by vapor-phase epitaxy, and their lasing characteristics in both natural and artificial microcavities were investigated. The CsPbBr₃ epitaxial film exhibits good crystalline quality and strong optical performance, with a thickness of approximately 368.1 nm, an Urbach energy of 16 ± 1 meV, and an optical gain coefficient of 338.8 cm⁻¹. These results confirm that the film is an efficient gain medium for perovskite lasers.
Spontaneous cracks in the film act as in-plane Fabry–Pérot cavities, producing low-threshold lasing with a threshold of 62.4 μJ cm⁻² and a Q factor of up to 2993. In addition, artificial CsPbBr₃ microdisk cavities fabricated by focused ion beam milling successfully support whispering-gallery-mode lasing, with a threshold of 81 μJ cm⁻² and a Q factor of about 2816. Furthermore, the CsPbBr₃ epitaxial film and FIB-defined microdisk cavities were transferred from mica to silicon substrates. After transfer, the PL and TRPL characteristics of the film were maintained, and the lasing spectra and mode spacing of the microdisk cavities were well preserved. The transferred microdisk laser also maintained stable lasing output during continuous measurements over 240 mins. Overall, this work establishes a transferable CsPbBr₃ epitaxial-film platform that combines high optical gain, natural and artificial microcavity lasers, and heterogeneous integration, providing a promising route toward visible on-chip light sources and silicon-based photonic integrated devices.

摘要 I
Abstract II
Acknowledgments III
Contents V
List of Tables IX
List of Figures X
Chapter 1 Introduction 1
1 Preface 1
2 Historical Review 3
2.1 Perovskite Epitaxial Films 3
2.2 Perovskite Microcavity Lasers 7
2.3 Perovskite Transfer 11
3 Motivation 14
Chapter 2 Physical Theories 15
1 Inorganic Halide Perovskite Materials 15
1.1 Structure of Perovskite 15
1.2 Properties of Perovskite 17
1.3 CsPbBr3 18
2 Mica Substrate 19
3 Crystal Growth 21
3.1 Chemical Vapor Deposition (CVD) 21
3.2 Vapor Phase Epitaxy (VPE) 23
3.3 Van der Waals Epitaxy 24
4 Epitaxial Film 25
5 Microcavity 27
5.1 Fabry–Pérot (FP) 28
5.2 Whispering Gallery Mode (WGM) 28
Chapter 3 Experimental Setups 29
1 Synthesis of Perovskite 29
1.1 CsPbBr3 Powder Synthesis 29
1.2 Growth of CsPbBr3 Epitaxial Films 30
2 Material Physical Characteristics Measurements 31
2.1 X-ray Diffraction (XRD) 31
2.2 Scanning Electron Microscopy (SEM) 34
2.3 Focused Ion Beam (FIB) 36
2.4 Transmission Electron Microscopy (TEM) 40
3 Optical and Lasing Analysis 44
3.1 Optical Absorption Measurement 44
3.2 Micro Photoluminescence (µ-PL) Spectroscopy 45
3.3 Lasing Measurement 46
3.4 Polarization Measurement 47
4 Time-Resolved Photoluminescence (TRPL) 48
5 Variable Stripe Length (VSL) Method 50
6 Transfer System 51
Chapter 4 Results and Discussions 53
1 CsPbBr3 Powder Synthesis 53
2 CsPbBr3 Epitaxial Films 56
2.1 SEM Images 56
2.2 XRD Analysis 57
2.3 TEM Analysis 58
3 Optical Properties Measurements 60
3.1 Absorption Spectrum 60
3.2 Tauc Plot 61
3.3 Exciton Binding Energy 62
3.4 Urbach Energy 63
3.5 PL Spectrum 65
3.6 Power Law 66
3.7 Stokes Shift 67
3.8 TRPL Result	69
3.9 Optical Gain 70
4 Natural Cavities from Spontaneous Cracks 73
4.1 Morphology 73
4.2 Lasing Behavior 74
4.3 Polarization-Resolved Analysis of Crack-Defined FP Lasing 76
4.4 Vernier Effect 79
5 Artificial CsPbBr₃ Microdisk Cavities 83
5.1 Morphology and Lasing Behavior 83
6 Transfer of CsPbBr3 Epitaxial Film and Microcavity 88
6.1 Transfer of CsPbBr3 Epitaxial Film 88
6.2 Transfer of CsPbBr3 Microdisk Cavity 91
6.3 Lasing Stability 95
Chapter 5 Conclusion 97
Chapter 6 Future Work 99
1 Fabrication of Complex Photonic Structures 99
2 Coupling with Waveguides 100
References 101
                                    

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