本研究以快速熱處理機台 (RTA) 來作數值熱傳模擬,
模擬直徑300厘米之晶圓冷卻10秒後的過程。所模擬的腔體為圓柱腔體，腔壁的溫度為373K，在腔體底部放一溫度1300K、直徑300mm及厚度0.7mm的圓形熱板，並且在腔體的壁上分別設進氣口及出氣口。在冷卻過程中，以氮氣做為主要的冷卻氣體，吹入腔體的氣體溫度為常溫300K。對於整個流場以加入低雷諾數k - ε 紊流模式分析之,其捨棄了傳統的牆函數(Wall functions)法則,而引入如fμ、f1、f2及一些額外的近牆修正項,使得紊流模式可以直接延伸至壁上並使之能更準確的計算複雜流場。並探討衝擊流對熱板的影響且以不同入口速度,不同熱板轉速,來觀察對於熱板的變化。

根據本文結論得知,衝擊流隨著雷諾數的值越高,熱板被帶走的熱量越多。多孔衝擊流比單一衝擊流有效地控制改善熱板均勻性。而增加熱板轉速後,多孔噴衝擊流經由熱板旋轉所帶動的氣流也能夠增加冷卻速率,並且大大改善熱板的溫度均勻性。在不同θ方向不同r位置的衝擊流冷卻效果比在固定徑向一排的衝擊流來得佳。且增加入口數目有助於均勻度的改善。

In this work, we simulate the heat transfer phenomenon of the cooling process of a silicon wafer after 10 second in the Rapid Thermal Annealing.
The initial temperature of the wafer whose thickness and diameter is 0.7mm and 300mm respectively is 1300K and be placed on the bottom of a cylindrical chamber where a gas inlet and outlet were set on.
We use nitrogen gas to cool down the wafer gas and keep the inlet temperature of the nitrogen gas and the wall temp of chamber to be 300K and 373K.
To simulate the flow field more exactly, we use the low - Reynolds number k -ε turbulence model to analyze the problem instead of using traditional wall function rule and introduced some modified variable such asfμ、f1、f2 to describe the phenomena near the walls.
We consider the number of inlet, inlet velocity, rotating speed of wafer and inlet angle to investigate how the variables affect this
problem.
According to the results of simulation, the cooling effect of impinging jet is more better with the increasing of Renolds number value obviously .
Multiple impinging jets can control to improve the uniformity of wafer temperture better then single jet, effectively.
The flow induced by the rotating of the wafer can increase the cooling speed and the uniformity.
Impinging jets in different θ and different r positions can improve the cooling effect.
And adding the number of inlet also can improve the uniformity.

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