本論文之主要研究目的是藉由表面處理來鈍化(Passivation) III-V 族
化合物多接面式太陽能電池中之磷化鋁銦層(AlInP, Window layer)，並分
析表面處理前後元件整體效率(η)、電流-電壓(I-V)特性(包括短路電流、
開路電壓)及其串聯電阻(Rs)、並聯電組(Rsh)的變化。在本次研究中，利用
硫化銨((NH4)2Sx) 溶液進行N 型磷化鋁銦層(AlInP)表面處理，並針對不
同抗反射膜(ARC)材料，對試片進行光電特性之分析，探討表面處理後其
界面所產生之影響。其次，對太陽電池元件進行照光與未照光的電流-電
壓特性量測，並比較其硫化處理前後特性之變化。
本實驗利用X 光光電子能譜術(XPS)分析表面處理前後磷化鋁銦
(AlInP)的鍵結變化，並由XPS 圖譜分析指出，經由硫化處理後其表面會
形成銦-硫(In-S)鍵結，硫原子會與經蝕刻液處理過後表面銦原子之懸浮鍵
鍵結，並取代部分因蝕刻液所造成之銦-氧(In-O)、鋁-氧(Al-O)鍵結，進
而造成鈍化之效果，經由鈍化處理可減少表面態密度及降低表面復合速
度，使元件漏電流降低、整體電流提升。此外，利用蕭基二極體的製作
及變溫電流-電壓(I-V-T)量測，分析硫化處理後磷化鋁銦層表面鈍化之特
性。最後，藉由蕭基能位障(Schottky barrier height)的變化與太陽能電池
照光與未照光之電流-電壓分析，XPS 表面鍵結型態分析作一系列之探討與研究。

The purpose of this research is to investigate the passivation mechanism of
the window layer (AlInP) of III-V compounds multi-junction solar cells by using
(NH4)2Sx solution treatment. The optical and electrical properties of the n-type
AlInP layer with and without (NH4)2Sx treatment under different anti-reflection
coating (ARC) materials would be analyzed. Besides, the conversion efficiency
of the multi-junction solar cell, I-V characteristics (Isc,Voc), series and parallel
resistances before and after the (NH4)2Sx treatment would be investigated.
Furthermore, the Current-Voltage (I-V) measurement of solar cell would be
compared with and without illumination after the (NH4)2Sx treatment.
In this experiment, the X-ray photoelectron spectroscopy (XPS) was
utilized to analyze the bonding configurations of the n-type AlInP surface before
and after the (NH4)2Sx solution treatment. The XPS spectra indicates that In-S
bonds can be formed on the AlInP surface after the (NH4)2Sx solution treatment.
The S atoms would bond with indium dangling bonds to form In-S bonds to
replace the In-O and Al-O bonds which were formed after using the selective
etching solution (NH4OH/H2O2/H2O, 1:1:50). The surface state density and surface recombination rate would be reduced after the (NH4)2Sx treatment and
the leakage current would be improved. In addition, the Schottky diode and
temperature dependent current-voltage (I-V-T) measurements were used to
analyze the passivated surface of the AlInP layer. Based on the experimental
results, correlations among the bonding configuration, Schottky barrier height
and I-V measurement are discussed, which provide the guidelines for the
performance provement in the III-V multi-junction solar cells.

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